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    TSSOP6 PACKAGE Search Results

    TSSOP6 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TSSOP6 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT363 TSSOP6; Tape reel SMD; standard product orientation 12NC ending 135 Rev. 1 — 20 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal


    Original     		PDF OT363 msc074

    Untitled

    Abstract: No abstract text available
    Text: SOT363 TSSOP6; reel pack; reversed product orientation; 12NC ending 165 Rev. 1 — 20 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal


    Original     		PDF OT363 msc074

    Untitled

    Abstract: No abstract text available
    Text: SOT363 TSSOP6; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 13 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal


    Original     		PDF OT363 msc074

    Untitled

    Abstract: No abstract text available
    Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAKS OT363 SC-88)

    Untitled

    Abstract: No abstract text available
    Text: PMG45UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMG45UN OT363 SC-88)

    TSSOP-6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE 7
    Text: NX7002AKS 60 V, dual N-channel Trench MOSFET Rev. 1 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX7002AKS OT363 SC-88) TSSOP-6 MOSFET TRANSISTOR SMD MARKING CODE 7

    sot363 aaa

    Abstract: BSS13
    Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138BKS OT363 SC-88) AEC-Q101 771-BSS138BKS115 BSS138BKS sot363 aaa BSS13

    mosfet SMD MARKING CODE 352

    Abstract: No abstract text available
    Text: PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMGD130UN OT363 mosfet SMD MARKING CODE 352

    BSS84AKS.115

    Abstract: BSS84AKS TSSOP6 package
    Text: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.


    Original     		PDF BSS84AKS OT363 SC-88) AEC-Q101 771-BSS84AKS115 BSS84AKS BSS84AKS.115 TSSOP6 package

    DIODE smd marking pl

    Abstract: mosfet SMD MARKING CODE 352
    Text: PMGD175XN 30 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMGD175XN OT363 DIODE smd marking pl mosfet SMD MARKING CODE 352

    marking code ya SMD Transistor

    Abstract: nxp sot363 MARKING 16
    Text: TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMG85XP OT363 SC-88) marking code ya SMD Transistor nxp sot363 MARKING 16

    BSS84AKS

    Abstract: No abstract text available
    Text: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.


    Original     		PDF BSS84AKS OT363 SC-88) AEC-Q101 BSS84AKS

    Untitled

    Abstract: No abstract text available
    Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAKS OT363 SC-88)

    Untitled

    Abstract: No abstract text available
    Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138BKS OT363 SC-88) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138BKS OT363 SC-88) AEC-Q101

    smd diode marking A3 sot363

    Abstract: sot363 aaa
    Text: BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress protection,encapsulated in very small SOT363 Surface-Mounted Device SMD


    Original     		PDF BAT754L OT363 AEC-Q101 smd diode marking A3 sot363 sot363 aaa

    TSSOP-6

    Abstract: SOT128 SOD87 UMT6 umt5 1E1A SCD79 SOT54A SO16 package SOT54
    Text: Philips Semiconductors Small-signal transistors and diodes Package titles PACKAGE TITLES To view the complete range of package outline drawings covering all devices shown in this book refer to either: • Data handbook SC18, Discrete Semiconductor Packages, ordering code 9397 750 05011


    Original     		PDF O-126) O-126FP OT54A SC-62) OT128 O-202) OT143 OT223 OT323 OT343 TSSOP-6 SOT128 SOD87 UMT6 umt5 1E1A SCD79 SOT54A SO16 package SOT54

    TSSOP-6

    Abstract: marking 34 TSSOP6 NXP smd marking Yd
    Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 18 April 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMGD290UCEA OT363 AEC-Q101 TSSOP-6 marking 34 TSSOP6 NXP smd marking Yd

    IRLML6402TRPBF

    Abstract: IRF7404TRPB TSSOP-6 IRLML6302TRPBF IRF7240TRPBF IRLML6401TRPBF TSSOP6 package IRFR5305PBF IRF5210STRLPBF irf7416trpbf
    Text: 1964-2012:QuarkCatalogTempNew 9/18/12 3:26 PM Page 1964 Power MOSFETs Power MOSFETs, P Channel RoHS SO-8 D2-PAK TSSOP-6 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 AUTOMATION & CONTROL POWER TO-220AB I-PAK P Channel, –40 Volt VDSS P Channel, –12 Volt VDSS


    Original     		PDF O-220AB O-247AC IRLML6401TRPBF IRF7329PBF* IRF7329TRPBF IRF7420PBF IRF7410PBF IRF7410TRPBF IRF7220PBF IRF7220TRPBF IRLML6402TRPBF IRF7404TRPB TSSOP-6 IRLML6302TRPBF IRF7240TRPBF TSSOP6 package IRFR5305PBF IRF5210STRLPBF irf7416trpbf

    Untitled

    Abstract: No abstract text available
    Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMGD290UCEA OT363 AEC-Q101

    k1 nxp

    Abstract: No abstract text available
    Text: BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363


    Original     		PDF BAT74S OT363 SC-88) AEC-Q101 300gal k1 nxp

    IRLML2502TRPBF

    Abstract: IRLML2803TRPBF IRLML2402TRPBF IRF7821TRPBF IRF7413ZTR irf740 irfp4004 IRF7805ZTRPBF IRFR3709ZTRPBF irlr7843tr
    Text: 1965-2012:QuarkCatalogTempNew 9/18/12 3:28 PM Page 1965 25 Power MOSFETs RoHS TEST & MEASUREMENT N Channel Power MOSFETs INTERCONNECT TO-220AB D2-PAK SO-8 N Channel, 30 Volt VDSS Gate Drive Package EACH Stock No. Mfr.’s Type VGS V ID (A) Power (W) RDS(on)


    Original     		PDF O-220AB IRL3302PBF IRL3202PBF IRL3502SPBF IRLML2402TRPBF IRLMS1902TRPBF IRF7101PBF IRLML2502TRPBF IRF7301PBF IRF7530PBF* IRLML2803TRPBF IRF7821TRPBF IRF7413ZTR irf740 irfp4004 IRF7805ZTRPBF IRFR3709ZTRPBF irlr7843tr

    TSSOP6 package

    Abstract: GTT3434 TSSOP-6 61a3
    Text: Pb Free Plating Product ISSUED DATE :2006/10/31 REVISED DATE : GTT3434 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 34m 6.1A Description The GTT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.


    Original     		PDF GTT3434 GTT3434 TSSOP6 package TSSOP-6 61a3

    8205S

    Abstract: 8205s mosfet STT8205S TSSOP-6 TSSOP6 package 8205* MOSFET
    Text: STT8205S 6 A, 20V,RDS ON 28mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercialindustrial surface mount applications.


    Original     		PDF STT8205S STT8205S 8205S 01-Jun-2002 8205S 8205s mosfet TSSOP-6 TSSOP6 package 8205* MOSFET