TSOP48 OUTLINE Search Results

m29f800fb

Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

M29F800FT

Abstract: M29F400FB M29F200FB m29f160fb M29F400F M29F400FT m29f800fb m29F160FT M29F200FT 0x22D6
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

M29F400FB

Abstract: M29Fxxx M29F160FT m29f800F M29F400 M29F160F M29F400FT
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

M29F400FB

Abstract: m29f800fb M29F200FB M29F400FT M29F800FT m29f160fb M29Fxxx m29f160ft JEDEC TRAY TSOP1 0x22D2
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

CDQ4

Contextual Info: 57. SGS-THOMSON M28V161 \u LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 MEMORY ERASE in SECTORS - 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

M28F210

Abstract: M28F220
Contextual Info: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

M28F210

Abstract: M28F220
Contextual Info: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

Contextual Info: M28V161 LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in SECTORS – 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per

M29W640GB

Abstract: M29W640GT M29W640GL
Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) FBGA TSOP48 (NA)

I252

Contextual Info: M28V430 M28V440 ¿ 7 7 SGS-1HOMSON LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location)

M29W640GB

Abstract: 3F8000H-3FFFFFH
Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) TSOP48 (NA) 12 x 20 mm

M29W640GT

Abstract: TSOP56 M29W640 M29W640GL M29W640GB 220ch M29W640GH numonyx m29 TFBGA48 448h
Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) TSOP48 (NA) 12 x 20 mm

48-PIN

Abstract: LRS1338A 1338a2
Contextual Info: LRS1338A Data Sheet Stacked Chip 8M Flash Memory and 2M SRAM FEATURES PIN CONFIGURATION • Flash memory and SRAM • Stacked die chip scale package • 48-pin TSOP TSOP48-P-1014 plastic package 48-PIN TSOP TOP VIEW S-A16/F-A15 1 48 S-A17/F-A16 S-A15/F-A14

M28V440

Contextual Info: M28V430 M28V440 LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) – Two 8K Byte or 4K Word Key Parameter

Z3A19

Abstract: TSOP48 outline TSOP48 footprint
Contextual Info: $ 7 . S G S -1 H 0 N IS 0 N M28V161 • S M S it g liM Q t g i LOW VOLTAGE 16 Megabit (2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in SECTORS - 32 Sectors of 64K Bytes each ■ 3.3V ± 0.3V SUPPLY VOLTAGE

L25D

Contextual Info: ^7#. M28V430 M28V440 SGS-THOMSON MD [i3 ILI{gTr[i3®Rl gS LOW VOLTAGE 4 Megabit (x8 or x16, Block Erase FLASH M EM O RY PR O D U C T PREVIEW DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

28F220

Abstract: 3542J 3D IC
Contextual Info: 5 7 . S C S -T H O M S O N M28F210 M28F220 •LI 2 Megabit x8 or x16, Block Erase FLASH MEMORY PR ELIM IN A R Y DATA ■ DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

28F220

Abstract: aish
Contextual Info: M 28F210 M 28F220 S G S -1 H 0 M S 0 N 5 7 . EO glS(a i[Li re©li!!lD(gi 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA • DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

TSOP48 outline

Abstract: AI-0065 st 339 TSOP32 TSOP56 TSOP*56 pd0003 TSOP56 Package Tape
Contextual Info: PD0003 Packing information Thin Small Outline packages for memory products Tape and Reel shipping media Introduction Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 250 and 2500 devices.

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in

TSOP56 Package Tape

Abstract: TSOP48 outline TSOP56 TSOP32 TSOP56 REEL
Contextual Info: TSOP TAPE & REEL Thin Small Outline Packages for Memory Products Tape and Reel Shipping Media INTRODUCTION Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 250 and 2500 devices.

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad

Contextual Info: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Mbit of spare area

NAND32GW3F4A

Contextual Info: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 32 Gbits of memory array – 1024 Mbits of spare area – Cost-effective solutions for mass storage