d1189
Abstract: 10D-9 19D2 DIP-40 PLCC-44 tsop48 d3
Text: Adapters - Phyton, Inc. Page 1 of 2 Device Programmers and Development Tools for Microcontrollers Home Quick Links Help Desk Downloads All Programmers Products E-Shop Support Contact News Site Map AE-TS48-16AT1024 DIP40/TSOP48 specialized adapter. Device Search
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AE-TS48-16AT1024
DIP40/TSOP48
ChipProg-40
d1189
10D-9
19D2
DIP-40
PLCC-44
tsop48 d3
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EEPROM 16MB
Abstract: house map M29W166T AM29F100 M29F800B M29W160T M29F001 16mb eeprom M29F200 M29W004
Text: Standard and Advanced Architecture Flash DISCOVER ST NOW Flash memories are the most dynamic new driving force in nonvolatile memories. The flexibility they provide for in-system reprogramming and their low cost meet the needs as an enabling technology for many new applications. Nomadic applications, such
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FLSTD/1198
286-CJ103
EEPROM 16MB
house map
M29W166T
AM29F100
M29F800B
M29W160T
M29F001
16mb eeprom
M29F200
M29W004
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M29F STMicroelectronics
Abstract: M29F002 M29F040 M29F100 M29F102B M29F105B M29F200 M29F400 M29W040 M29W400
Text: Flash Memories Discover ST Now A WORLD LEADER IN NON-VOLATILE MEMORIES STMicroelectronics is a world leader in Non-Volatile Memories, manufacturing a broad range which includes OTP one time programmable and UV (ultra violet erase) EPROMs, Flash Memories,
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FLFLASH/0998
286-CJ103
M29F STMicroelectronics
M29F002
M29F040
M29F100
M29F102B
M29F105B
M29F200
M29F400
M29W040
M29W400
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TAG 9109
Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in
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286-CJ103
TAG 9109
M35080
M95256 equivalent
TSOP48 outline
EEPROM 16MB
NVRAM 1KB
TSOP40
"dual access" "nonvolatile memory" -RFID
ST1335
asm eagle
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footprint so44
Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad
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operat911)
D-90449
BRMEMSEL/0699
footprint so44
9977
IC SOCKET TSOP48
TSOP32 FOOTPRINT
ST1355
52 pin plcc socket
ST19GF34
PSDSoft
ST19AF08
serial flash 256Mb fast erase spi
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PJ 1179
Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a
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asm eagle
Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:
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BRMEMSEL/0997
asm eagle
M28F101
M28F102
M28F201
M28F256
M28F512
texas 4mb dram
M27C1024
Parallel NOR Flash Market
MBX860
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USOP48
Abstract: VFBGA63 FBGA63 NAND08GW4B
Text: NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND512-B,
NAND01G-B,
NAND02G-B,
NAND04G-B,
NAND08G-B
Byte/1056
64Mbit
USOP48
VFBGA63
FBGA63
NAND08GW4B
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LGA52
Abstract: LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models
Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Preliminary Data Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2A
NAND16GW3C4A
LGA52
LGA-52
16gb
8Gb 64 gbit nand flash
NAND16GW3C4A
TSOP48 outline
16G nand
16G nand flash
NS4258
IBIS Models
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LGA52
Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2A
NAND16GW3C4A
LGA52
LGA-52
NAND16GW3C4A
NAND08GW3C2A
16G nand
JESD97
NAND16GW3
NS4258
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NAND512B
Abstract: SD 1083 0.65mm pitch BGA NAND08G-B NAND04G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 NAND01G-B
Text: NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND512-B,
NAND01G-B
NAND02G-B
NAND04G-B
NAND08G-B
Byte/1056
64Mbit
NAND512B
SD 1083
0.65mm pitch BGA
NAND08G-B
FBGA63
SE 4.000 mhz 30pf
TRANSISTOR z67
VFBGA63
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block code error management, verilog
Abstract: flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63
Text: NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array
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NAND01G-B,
NAND02G-B,
NAND04G-B,
NAND08G-B
Byte/1056
64Mbit
block code error management, verilog
flash chip 8gb
NAND08GW
NAND01G-B
NAND01GR3B
NAND01GW3B
NAND02G-B
NAND04G-B
NAND08G-B
VFBGA63
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LGA52
Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2B
NAND16GW3C4B
TSOP48
LGA52
LGA-52
ULGA52
nand 16g
16G nand flash
NAND08GW3C2B
NAND16GW3
NAND16GW3C4A
NAND16GW3C4B
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Wear Leveling in Single Level Cell NAND Flash Memory
Abstract: 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc
Text: NAND04Gx3C2A NAND08Gx3C2A 4 Gbit, 8 Gbit 2112 Byte Page, 3V, Multi-level NAND Flash Memory Preliminary Data Features summary • High density multi-level Cell MLC NAND Flash memories: – Up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solutions for mass storage
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NAND04Gx3C2A
NAND08Gx3C2A
Wear Leveling in Single Level Cell NAND Flash Memory
4GIT
NAND08Gx3C2A
NAND04GW3C2A
AI07563B
bad block management in mlc
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NAND04
Abstract: A15-A23
Text: NAND04GW3C2B NAND08GW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multiplane architecture, MLC NAND flash memories Preliminary Data Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area
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NAND04GW3C2B
NAND08GW3C2B
2112-byte
NAND04
A15-A23
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JESD97
Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage
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NAND04GW3B2B
NAND08GW3B2A
Byte/1056
JESD97
NAND04GW3B2B
NAND08GW3B2A
NAND04
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block code error management, verilog
Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■
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NAND04GW3B2B
NAND08GW3B2A
Byte/1056
block code error management, verilog
NAND08GW3B2A
bad block
block code error management, verilog source code
JESD97
NAND04GW3B2B
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NUMONYX
Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■
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NAND04GW3B2B
NAND08GW3B2A
Byte/1056
NUMONYX
JESD97
NAND04GW3B2B
NAND08GW3B2A
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M29F200BB programmer
Abstract: JESD97 M29F200 M29F200B M29F200BB M29F200BT
Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Features • Single 5V±10% supply voltage for Program, Erase and Read operations ■ Access time: 45, 50, 70, 90ns ■ Programming time – 8µs per Byte/Word typical
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M29F200BT
M29F200BB
256Kb
128Kb
TSOP48
M29F200BB programmer
JESD97
M29F200
M29F200B
M29F200BB
M29F200BT
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LGA52
Abstract: 4GW3 NAND08GW3C2B 2112B LGA-52 NAND04GW3C
Text: NANDxxGW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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2112-byte
TSOP48
LGA52
128yx
4GW3
NAND08GW3C2B
2112B
LGA-52
NAND04GW3C
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M29F200BB
Abstract: M29F200BT JESD97 M29F200 M29F200B
Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory FEATURES SUMMARY • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45, 50, 70, 90ns PROGRAMMING TIME – 8µs per Byte/Word typical
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M29F200BT
M29F200BB
256Kb
128Kb
TSOP48
M29F200BB
M29F200BT
JESD97
M29F200
M29F200B
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M29F200BB
Abstract: No abstract text available
Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Features • Single 5V±10% supply voltage for Program, Erase and Read operations ■ Access time: 45, 50, 70, 90ns ■ Programming time – 8µs per Byte/Word typical
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M29F200BT
M29F200BB
256Kb
128Kb
M29F200BB50M3T
M29F200BB
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M29F STMicroelectronics
Abstract: m29F REV 9
Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Features • Single 5V±10% supply voltage for Program, Erase and Read operations ■ Access time: 45, 50, 70, 90ns ■ Programming time – 8µs per Byte/Word typical
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M29F200BT
M29F200BB
256Kb
128Kb
M29F200BT70M6E
M29F STMicroelectronics
m29F REV 9
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16G nand
Abstract: No abstract text available
Text: NANDxxGW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High density NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage applications ■
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16-Gbit,
4224-byte
16G nand
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