KMA6D0P20X
Abstract: M01 marking
Text: SEMICONDUCTOR KMA6D0P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M01 1 JA 2 3 No. Item Marking Description Device Mark M01 KMA6D0P20X * Lot No. JA Manufacturing date Year/Week Pin No. Dot Pin 1 Note) * Lot No. marking method
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KMA6D0P20X
KMA6D0P20X
M01 marking
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KMA2D8P20X
Abstract: Marking 52 tsop 6 marking A1 6
Text: SEMICONDUCTOR KMA2D8P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M05 1 01 2 3 No. Item Marking Description Device Mark M05 KMA2D8P20X * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1
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KMA2D8P20X
KMA2D8P20X
Marking 52 tsop 6
marking A1 6
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TSOP-6
Abstract: marking A1 4 PIN marking 52 Marking 52 tsop 6 TSOP 6 marking 52 E5 Marking marking A1 6 E1 M02
Text: SEMICONDUCTOR KMA2D7DP20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M02 1 01 2 3 No. Item Marking Description Device Mark M02 KMA2D7DP20X * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1
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KMA2D7DP20X
TSOP-6
marking A1 4 PIN
marking 52
Marking 52 tsop 6
TSOP 6 marking 52
E5 Marking
marking A1 6
E1 M02
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444010L-X
512K-WORD
PD444010L-X
48-pin
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UPD23C8000XCZ
Abstract: UPD23C8000XCZ-XXX UPD23C8000X d23cxxxxx PD23C8000 UPD23C8000XGY-XXX-MKH UPD23C8000XGX-XXX UPD23C8000XGX UPD23C8000XG5XXX7JF
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).
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PD23C8000X
/512K-WORD
16-BIT
PD23C8000X
42-pin
44-pin
48-pin
UPD23C8000XCZ
UPD23C8000XCZ-XXX
UPD23C8000X
d23cxxxxx
PD23C8000
UPD23C8000XGY-XXX-MKH
UPD23C8000XGX-XXX
UPD23C8000XGX
UPD23C8000XG5XXX7JF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).
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PD23C8000LX
/512K-WORD
16-BIT
PD23C8000LX
42-pin
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444010L-X
512K-WORD
PD444010L-X
48-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444010A-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010A-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444010A-X
512K-WORD
PD444010A-X
48-pin
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UPD23C8000XGY-XXX-MKH
Abstract: UPD23C8000XCZ-XXX UPD23C8000XCZ
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).
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PD23C8000X
/512K-WORD
16-BIT
PD23C8000X
42-pin
44-pin
48-pin
UPD23C8000XGY-XXX-MKH
UPD23C8000XCZ-XXX
UPD23C8000XCZ
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upd23c8000
Abstract: UPD23C80
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).
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PD23C8000LX
/512K-WORD
16-BIT
PD23C8000LX
42-pin
44-pin
48-pin
upd23c8000
UPD23C80
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CS18LV40963CI
Abstract: CS18LV40963D
Text: High Speed Super Low Power SRAM 512k word x 8 bit CS18LV40963 DESCRIPTION The CS18LV40963 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques
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CS18LV40963
CS18LV40963
50/55/70ns
CS18LVrved.
36-ball
2004-March
CS18LV40963CI
CS18LV40963D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-PIN
I/O16)
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uPD23C4001EJ
Abstract: UPD23C4001EJGW uPD23C4001 PD23C4001 PD23C4001EJ nec 40-pin plastic dip
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C4001EJ 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The µPD23C4001EJ is a 4,194,304 bits 524,288 words by 8 bits mask-programmable ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.
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PD23C4001EJ
512K-WORD
PD23C4001EJ
32-pin
40-pin
uPD23C4001EJ
UPD23C4001EJGW
uPD23C4001
PD23C4001
nec 40-pin plastic dip
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STMicroelectronics smd marking code
Abstract: BGA and QFP Package 14x14 STMICROELECTRONICS MSL STMicroelectronics date code tssop-14 HiQuad package STMicroelectronics pentawatt date code opto mold compound infineon msl TQFP 14X20 ST TSSOP Marking
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN CRP/04/744 LEAD-FREE CONVERSION PROGRAM Compliance with RoHS 1 1 RoHS = Restriction of the use of certain Hazardous Substances European directive 2002/95/EC November 18, 2004 Page 1/12 2004 STMicroelectronics - All Rights Reserved
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CRP/04/744
2002/95/EC)
STMicroelectronics smd marking code
BGA and QFP Package 14x14
STMICROELECTRONICS MSL
STMicroelectronics date code tssop-14
HiQuad package
STMicroelectronics pentawatt date code
opto mold compound
infineon msl
TQFP 14X20
ST TSSOP Marking
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CM316
Abstract: toshiba tc55 TC55VCM316BSGN TC55VCM316BTGN TC55YCM316BSGN TC55YCM316BTGN TC55YEM316BXGN55 TC55VCM316BSGN55 TC55VEM316B
Text: TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55 TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM316B, TC55VEM316B, TC55YCM316B and TC55YEM316B is a 8,388,608-bit static random
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TC55VCM316BTGN,
TC55VCM316BSGN,
TC55VEM316BXGN45
TC55YCM316BTGN,
TC55YCM316BSGN,
TC55YEM316BXGN55
288-WORD
16-BIT
TC55VCM316B,
TC55VEM316B,
CM316
toshiba tc55
TC55VCM316BSGN
TC55VCM316BTGN
TC55YCM316BSGN
TC55YCM316BTGN
TC55VCM316BSGN55
TC55VEM316B
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STMicroelectronics smd marking code
Abstract: smd marking code stmicroelectronics BGA bga 10x13 BGA 15X15 BGA 23X23 HEPTAWATT SMD Marking STMicroelectronics tqfp INFINEON package tqfp PART MARKING PLCC Part Marking STMicroelectronics Date Code Marking STMicroelectronics PACKAGE DPAK
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MLD-MIC/05/943 Notification Date 02/23/2005 CONVERSION TO PB-FREE PRODUCTION MIC - MICROCONTROLLERS 1/4 PCN MLD-MIC/05/943 - Notification Date 02/23/2005 Table 1. Change Identification Product Identification Product Family/Commercial Product
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MLD-MIC/05/943
MLD-MIC/05/943
STMicroelectronics smd marking code
smd marking code stmicroelectronics
BGA bga 10x13
BGA 15X15
BGA 23X23
HEPTAWATT SMD
Marking STMicroelectronics tqfp
INFINEON package tqfp PART MARKING
PLCC Part Marking STMicroelectronics
Date Code Marking STMicroelectronics PACKAGE DPAK
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TC55VCM316BTGN55
Abstract: TC55VCM316BSGN55 toshiba tc55 TC55VCM316BSGN TC55VCM316BTGN TC55VEM316BXGN40 TC55YCM316BSGN TC55YCM316BTGN TC55YEM316BXGN55
Text: TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN40,55 TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM316B, TC55VEM316B, TC55YCM316B and TC55YEM316B is a 8,388,608-bit static random
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TC55VCM316BTGN,
TC55VCM316BSGN,
TC55VEM316BXGN40
TC55YCM316BTGN,
TC55YCM316BSGN,
TC55YEM316BXGN55
288-WORD
16-BIT
TC55VCM316B,
TC55VEM316B,
TC55VCM316BTGN55
TC55VCM316BSGN55
toshiba tc55
TC55VCM316BSGN
TC55VCM316BTGN
TC55YCM316BSGN
TC55YCM316BTGN
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MICRON POWER RESISTOR 24W
Abstract: No abstract text available
Text: ADVANCE MICRON ft M T24D T J472(S 4 MEG x 72 DRAM MODULE SElMCONOUCTQft MC 4 MEG X 72 DRAM DRAM MODULE 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Components SOJ TSOP D DT • Packages
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168-pin,
000mW
048-cycle
048cyde
128ms
DE-26)
MT240ffl472
MT24D
P01-P08
MICRON POWER RESISTOR 24W
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT uPD23C4001 EJ 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The ¿¡PD23C4001 EJ is a 4,194,304 bits 524,288 w ords by 8 bits m ask-program m able ROM. The active levels of OE (O utput Enable Input) can be selected with mask-option.
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uPD23C4001
512K-WORD
PD23C4001
32-pin
40-pin
PD23C4001EJGW
PD23C4001EJGZ-LJH
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d44401
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.
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512K-WORD
uPD444010L-X
48-pin
PD444010L-X
PD444010L-X.
UPD444010LGY-B
12x18
d44401
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D23C8000
Abstract: PD23C8000L P42C-100-600A upd23c8000
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE / 512K-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C8000L is a 8,388,608 bits mask-programmable ROM. The word organization isselectable (BYTE mode : 1,048,576 words by 8 bits, WORD mode : 524,288 words by 16 bits).
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512K-WORD
16-BIT
uPD23C8000L
PD23C8000L
42-pin
44-pin
48-pinplastic
44-pinplastic
12661EJ3V0D
D23C8000
P42C-100-600A
upd23c8000
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The ¿¡PD23C8000X is a 8, 388, 608 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 1, 048, 576 w ords by 8 bits, W ORD mode: 524, 288 w ords by 16 bits).
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OCR Scan
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/512K-WORD
16-BIT
PD23C8000X
42-pin
44-pin
48-pin
PD23C8000XGX
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The ^¡PD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444010L-X
512K-WORD
uPD444010L-X
PD444010L-X
48-pin
S48GY-50-MKH1
13960EJ2V0D
PD444010L-X.
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d23c8000xcz
Abstract: s48g 23C8000 PD23C8000xcz
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The /¿PD23C8000X is a 8, 388, 608 bits m ask-program m able ROM. The word organization is selectable (BYTE mode: 1, 048, 576 w ords by 8 bits, W ORD mode: 524, 288 words by 16 bits).
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/512K-WORD
16-BIT
uPD23C8000X
PD23C8000X
42-pin
44-pin
48-pin
d23c8000xcz
s48g
23C8000
PD23C8000xcz
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