spansion top marking
Abstract: spansion part marking spansion marking S29AL032D10FA1010 tsop package S29AL032D AMD top marking TS048 TRAY spansion tape AL032D
Text: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL032D Floating Gate Flash Memory 32 Megabit 2 M x 16-Bit / 4 M x 8-Bit Spansion Overview Spansion™, the Flash memory subsidiary of AMD and Fujitsu, is the
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S29AL032D
16-Bit
ISO/TS16949
ISO9001
ISO14001
200-nanometer,
S29AL032D10FA1010
AL032D10FAI01.
1-866-SPANSION
spansion top marking
spansion part marking
spansion marking
S29AL032D10FA1010
tsop package
AMD top marking
TS048 TRAY
spansion tape
AL032D
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Spansion s29al016d
Abstract: al016d S29AL016D spansion top marking am29lv160bt spansion part marking spansion marking VBK048 TS048 TRAY S29AL016D10BA1010
Text: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL016D Floating Gate Flash Memory 16 Megabit 1 M x 16-Bit / 2 M x 8-Bit Spansion Overview Spansion™, the Flash memory subsidiary of AMD and Fujitsu, is the
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Original
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S29AL016D
16-Bit
ISO/TS16949
ISO9001
ISO14001
S29AL016D10BA1010
AL016D10BAI01.
1-866-SPANSION
3022A
Spansion s29al016d
al016d
spansion top marking
am29lv160bt
spansion part marking
spansion marking
VBK048
TS048 TRAY
S29AL016D10BA1010
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VBK048
Abstract: k 2674 S29AL004D spansion top marking TS048 TRAY AL004D
Text: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL004D Floating Gate Flash Memory 4 Megabit 256 K x 16-Bit / 512 K x 8-Bit Spansion Overview
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Original
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S29AL004D
16-Bit
ISO/TS16949
ISO9001
ISO14001
S29AL004D10BA1010
AL004D10BAI01.
1-866-SPANSION
3020A
VBK048
k 2674
spansion top marking
TS048 TRAY
AL004D
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Untitled
Abstract: No abstract text available
Text: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL016M MirrorBit Flash Memory TM 16 Megabit 1 M x 16-Bit / 2 M x 8-Bit Spansion Overview FEATURES AND BENEFITS
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Original
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S29AL016M
16-Bit
ISO/TS16949
ISO9001
S29AL016M10FA1010
AL016M10FAI01.
1-866-SPANSION
3023A
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PDF
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S29AL008D
Abstract: AL008 spansion part marking AL008D spansion s29al008d VBK048 spansion top marking S29AL008D10BA1010 BGA package tray 40 x 40
Text: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL008D Floating Gate Flash Memory 8 Megabit 512 K x 16-Bit / 1 M x 8-Bit Spansion Overview
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Original
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S29AL008D
16-Bit
ISO/TS16949
ISO9001
ISO14001
S29AL008D10BA1010
AL008D10BAI01.
1-866-SPANSION
3021A
AL008
spansion part marking
AL008D
spansion s29al008d
VBK048
spansion top marking
S29AL008D10BA1010
BGA package tray 40 x 40
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148E
Abstract: CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVI CY62148EV30LL-45BVXI
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ■ Pin compatible with CY62148DV30
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CY62148EV30
CY62148DV30
CY62148E
CY62148DV30
CY62148EV30LL
CY62148EV30LL-45BVI
CY62148EV30LL-45BVXI
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CY62148E
Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 330281
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This
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CY62148E
CY62148B
CY62148ELL
CY62148ELL-45ZSXI
CY62148ELL-55SXI
330281
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PDF
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CY62148E
Abstract: CY62148e CY62148b
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This
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CY62148E
CY62148e CY62148b
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down
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CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down
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CY62148E
CY62148B
32-pin
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925501
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular
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CY62146EV30
CY62146DV30
48-ball
44-pin
925501
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular
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CY62146EV30
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down
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CY62146EV30
CY62146DV30
48-ball
44-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down
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CY62146EV30
CY62146DV30
48-ball
44-pin
727-CY46EV30LL45ZSXI
CY62146EV30LL-45ZSXI
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PDF
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular
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CY62146EV30
I/O15)
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IJ01
Abstract: CXK581000AYM CXK581OQOATM CXKS81003ATM SCHB
Text: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data
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OCR Scan
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CXK581OOOATM/AYM/AM
-10LLB
131072-word
CXK581OQOATM
CXK581000AYM
CXK561OOOAM
CXK581
150ns
100ns
IJ01
CXKS81003ATM
SCHB
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E28F008SA-120
Abstract: E28F008SA
Text: inlel 28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY Hlgh-Denslty Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time SRAM-Compatible Write Interface Extended Cycling Capability — 100,000 Block Erase Cycles
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OCR Scan
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28F008SA
44-Lead
E28F008SA-120
F28F008SA-120
PA28F0085A-85
PA28F0085A-120
28F008SA-L
AP-359
AP-360
AP-364
E28F008SA
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Untitled
Abstract: No abstract text available
Text: SONY CXK77920TM/YM 262144-WORD by 9-BIT HIGH SPEED SYNCHRONOUS STATIC RAM -11/12/15 Preliminary Description The CXK77920TM/YM is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-word by 9-bit. This syn chronous SRAM integrates input registers, high
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CXK77920TM/YM
262144-WORD
CXK77920TM/YM
144-word
44pln
400mll
32taos
-44P-L
DM4-P-0400-AE
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