TSM2N7002E Search Results

Contextual Info: s TAIWAN SEMICONDUCTOR TSM2N7002E 60V N-Channe! MOSFET b RoHS y CO M PLIANCE SOT-23 •à 1 2 SOT-323 «t PRODUCT SUM M ARY P in D e fin itio n : 1. Gate 2. Source 3. Drain V ds V) R oS (on)(Q ) lD (mA) 3 @ V CS= 1Û V 300 4 @ V<;s z 4.5V 200 60 Features

Contextual Info: TSM2N7002E 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 3 @ VGS = 10V 300 4 @ VGS = 4.5V 200 Block Diagram ● Low On-Resistance: 3Ω ● Low Input and Output Leakage

TSM2N7002

Abstract: TSM2N7002E TSM2N7002ECU TSM2N7002ECX
Contextual Info: TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS on , Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Advanced trench process technology No minority carrier storage time

sot-363 n-channel mosfet

Abstract: TSM2N7002ED TSM2N7002EDCU6
Contextual Info: TSM2N7002ED 50V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 2 6. Drain (2) 2. Gate (2) 5. Gate (1) 3. Drain (1) 4. Source (1) VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Ordering Information

marking A07

Abstract: TSM2N7002E TSM2N7002ECX
Contextual Info: E TAIW AN TSM2N7002E S E M IC O N D U C T O R 60V N-Channel MOSFET pb RoHS CO M PLIANCE SO T-23 SOT-323 PRODUCT SUMMARY P in D e fin itio n : 1. Gate 2. Source 3. Drain é 1 2 1 V ds (V ) R oS (on)(Q ) lD (mA) 3 @ V CS= 1 Û V 300 4 @ V<;s z 4.5V 200 60