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    100N06

    Abstract: No abstract text available
    Text: $ TAIW AN TSM110N06 Preliminary SEMICONDUCTOR 55V N-Channel Power MOSFET bl RoHS C O M P L IA N C E PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS{on)(iYlO) Id (A) 55 8 @ Vcs=10V 62 123 General Description The TSM 100N06 N-Channel Power MOSFET utilized advanced processing techniques to achieve extremely low onre si stance per silicon area. This benefit, combined with the fast switching speed and rugged ¡zed device design that


    OCR Scan     		PDF TSM110N06 100N06

    marking CODE 62A general

    Abstract: TSM110N06CZ Diode 62a DEVICE MARKING CODE 150A N-Channel power MOSFET TL 413 TSM110N06 GENERAL SEMICONDUCTOR MARKING 62A 5642 tube
    Text: $ Preliminary TSM110N 06 55V N-Channel Power MOSFET T A IW A N S E M IC O N D U C T O R pb RoHS C O M P L IA N C E TO -220 • .s i PRODUCT SUM M ARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS{on)(iYlO) Id (A) 55 8 @ Vcs=10V 62 123 G eneral Description


    OCR Scan     		PDF O-220 TSM110N06 TSM100N06 O-22C) marking CODE 62A general TSM110N06CZ Diode 62a DEVICE MARKING CODE 150A N-Channel power MOSFET TL 413 TSM110N06 GENERAL SEMICONDUCTOR MARKING 62A 5642 tube