Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TSHG5510 Search Results

    SF Impression Pixel

    TSHG5510 Price and Stock

    Vishay Semiconductors TSHG5510

    EMITTER IR 830NM 100MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSHG5510 Bulk 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.53398
    		Buy Now

    Vishay Intertechnologies TSHG5510

    Ir Emitter 830Nm 5Mm 40Deg; Viewing Angle:38°; Diode Case Style:T-1 3/4 (5Mm); Forward Current If(Av):100Ma; Forward Voltage Vf Max:1.45V; Rise Time:15Ns; Fall Time Tf:15Ns; Operating Temperature Min:-40°C; Product Range:-; Msl:- Rohs Compliant: Yes |Vishay TSHG5510
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TSHG5510 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Future Electronics TSHG5510 Bulk 6 Weeks 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.295
    		Buy Now
    Chip 1 Exchange TSHG5510 792
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TSHG5510 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSHG5510 Vishay Semiconductors Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER 830NM 5MM 40DEG2 Original PDF

    TSHG5510 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm


    Original     		PDF TSHG5510 2002/95/EC 2002/96/EC TSHG5510 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm


    Original     		PDF TSHG5510 TSHG5510 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    TSHG5510

    Abstract: No abstract text available
    Text: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and


    Original     		PDF TSHG5510 TSHG5510 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm


    Original     		PDF TSHG5510 TSHG5510 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    TSHG5510

    Abstract: No abstract text available
    Text: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm


    Original     		PDF TSHG5510 2002/95/EC 2002/96/EC TSHG5510 11-Mar-11

    TSHG5510

    Abstract: No abstract text available
    Text: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm


    Original     		PDF TSHG5510 2002/95/EC 2002/96/EC TSHG5510 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - IR Emitters with Radient Intensity up to 600 m/W/sr at 100 mA Infrared Emitters 830 nm, 850 nm, and 870 nm High Intensity and High Optical Power Infrared Emitters KEY FEATURES


    Original     		PDF VSMY3850 TSHG8200 TSHG5510 VSMY7850X01 TSFF5410 TSFF5510 VSMF4720 TSFF5210 VSMY7852X01 VMN-PT0211-1311

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		PDF VMN-MS6520-1311 TSSP4038

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original     		PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    sensor BPW34 application note

    Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,


    Original     		PDF VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note

    TSUS3400

    Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS SELECTOR GUIDE w w w. v i s h a y. c o m INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS Vishay Semiconductors Infrared Emitters


    Original     		PDF VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01

    Vishay TYPE 40D

    Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		PDF VMN-MS6520-1506 Vishay TYPE 40D Vishay 40d AC 1506 panasonic inverter dv 707

    TSHG8200

    Abstract: CCTV infrared VSMY1850
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . 8 3 0 nm, 850 nm, a nd 870 nm • Radiant intensity up to 600 mW/sr at 100 mA • Broad option of viewing angles from ± 60° to ± 3° • Up to 5x longer life than competing devices BENEFITS • Reduce the number of emitters required to produce equivalent optical power –


    Original     		PDF VMN-PT0211-1101 TSHG8200 CCTV infrared VSMY1850

    sensor BPW34 application note

    Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
    Text: V ishay I ntertechnolog y, I nc . Optoelectronics – Products for Industrial Applications AND TEC I INNOVAT O L OGY Guide to Industrial Applications N HN OPTOELECTRONICS O 19 62-2012 TABLE OF CONTENTS


    Original     		PDF VMN-MS6520-1201 sensor BPW34 application note CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Optoelectronics エミッタ, ディテクタ, センサー Optoelectronics - エミッタ, ディテクタ, センサー 赤外線エミッタフォトディテクタ、オプティカルセンサー 赤外線エミッタ


    Original     		PDF VMN-SG2180-1305

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors


    Original     		PDF VCNL4010 VCNL4020 VCNL3020 VMN-SG2123-1404

    Eye Safety

    Abstract: No abstract text available
    Text: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws


    Original     		PDF 22-Jan-15 Eye Safety