TSHF6410 Search Results
TSHF6410 Price and Stock
Vishay Semiconductors TSHF6410EMITTER IR 890NM 100MA RADIAL |
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TSHF6410 | Bulk | 3,263 | 1 |
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Vishay Intertechnologies TSHF6410IR EMITTER DH 890NM 5MM 22DEG-e3 - Tape and Reel (Alt: TSHF6410) |
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TSHF6410 | Reel | 12 Weeks | 4,000 |
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TSHF6410 | 3,482 |
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TSHF6410 | Bulk | 3,780 | 1 |
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TSHF6410 | 3,977 | 1 |
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TSHF6410 | 162,000 |
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TSHF6410 | 13 Weeks | 4,000 |
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TSHF6410 | 2,123 |
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Vishay Intertechnologies TSHF6410-ASZInfrared Emitters IR EMITTER DH 890NM 5MM 22DEG-E3 |
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TSHF6410-ASZ |
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Vishay Intertechnologies TSHF6410-ES21Infrared Emitters IR EMITTER DH 890NM 5MM 22DEG-E3 |
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TSHF6410-ES21 |
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Vishay Intertechnologies TSHF6410-KSZInfrared Emitters IR EMITTER DH 890NM 5MM 22DEG -E3 |
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TSHF6410-KSZ |
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TSHF6410 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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TSHF6410 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER DH 890NM 5MM 22DEG2 | Original |
TSHF6410 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSHF6410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : 5 • Peak wavelength: p = 890 nm • • • • High reliability |
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TSHF6410 2002/95/EC 2002/96/EC TSHF6410 11-Mar-11 | |
TSHF6410Contextual Info: TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 890 nm High reliability |
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TSHF6410 2002/95/EC 2002/96/EC TSHF6410 18-Jul-08 | |
Contextual Info: TSHF6410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : 5 • Peak wavelength: p = 890 nm • • • • High reliability |
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TSHF6410 2002/95/EC 2002/96/EC TSHF6410 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSHF6410Contextual Info: TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 890 nm High reliability |
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TSHF6410 2002/95/EC 2002/96/EC TSHF6410 11-Mar-11 | |
Contextual Info: TSHF6410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : 5 • Peak wavelength: p = 890 nm • • • • High reliability |
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TSHF6410 2002/95/EC 2002/96/EC TSHF6410 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
TSHF6410Contextual Info: TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 890 nm • High reliability • High radiant power |
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TSHF6410 TSHF6410 18-Jul-08 | |
Contextual Info: TSHF6410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : 5 • Peak wavelength: p = 890 nm • • • • High reliability |
Original |
TSHF6410 2002/95/EC 2002/96/EC TSHF6410 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g |
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VCNL4020X01 VCNL3020 AEC-Q101 VCNL4010 VCNL4020 VMN-SG2123-1502 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Optoelectronics エミッタ, ディテクタ, センサー Optoelectronics - エミッタ, ディテクタ, センサー 赤外線エミッタフォトディテクタ、オプティカルセンサー 赤外線エミッタ |
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VMN-SG2180-1305 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors |
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VCNL4010 VCNL4020 VCNL3020 VMN-SG2123-1404 | |
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