TSAL Search Results
TSAL Price and Stock
Vishay Semiconductors TSAL6200EMITTER IR 940NM 100MA RADIAL |
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TSAL6200 | Bulk | 16,568 | 1 |
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Vishay Semiconductors TSAL6100EMITTER IR 940NM 100MA RADIAL |
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TSAL6100 | Bulk | 5,592 | 1 |
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Vishay Semiconductors TSAL6102ULIREMITTER HIGHPOWR 940NM 5MM 10D |
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TSAL6102UL | Bulk | 2,912 | 1 |
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Vishay Semiconductors TSAL6100ULIR EMITTER HIPOWER 950NM 5MM 10D |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6100UL | Bulk | 1,655 | 1 |
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Vishay Semiconductors TSAL6400EMITTER IR 940NM 100MA RADIAL |
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TSAL6400 | Bulk | 1,210 | 1 |
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TSAL Datasheets (19)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| TSAL0001 |
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Equipment - Specialty, Test and Measurement, LOGIC ANALYZER USB 8CH 24MHZ | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL0002 |
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Equipment - Specialty, Test and Measurement, LOGIC ANALYZER USB 16CH 100MHZ | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL4400 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 3 mm (T-1) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5100 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5300 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5300 | Vishay Intertechnology | EMITTER, IR 950NMEMITTER, IR 950NM; Radiant intensity:45mW/Sr; Angle, half:22(degree); Case style:T - 13/4; Current, If Vf:100mA; Current, If max:200mA; Current, peak pulse:1.5mA; Current, reverse leakage max:10uA; Diameter, | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5300-FSZ | Vishay Siliconix | High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL5300-GSZ | Vishay Siliconix | High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6100 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6200 |
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LED, INFRARED, GAAS, T-1 3/4 (TSAL6200) | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6200 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6200 | Vishay Telefunken | GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL6400 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7200 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| TSAL7300 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in ph 5 mm (T-1.75) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7300 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH POWR 950NM 5MM 2 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7300 | Vishay Telefunken | GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 3-4) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7400 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSAL7600 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSAL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSAL6400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm |
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TSAL6400 2002/95/EC 2002/96/EC TSAL6400 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
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Contextual Info: Tem ic TSAL4400 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 3 mm T -l Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
TSAL4400 TSAL4400 D-74025 04-Mar-98 | |
TSAL5100 Vishay
Abstract: TSAL5100
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TSAL5100 TSAL5100 D-74025 20-May-99 TSAL5100 Vishay | |
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Contextual Info: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL7600 TSAL7600 D-74025 20-May-99 | |
TSAL7200Contextual Info: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs |
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TSAL7200 TSAL7200 D-74025 20-May-99 | |
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Contextual Info: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm |
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TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 11-Mar-11 | |
TSAL6200Contextual Info: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
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TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11 | |
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Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
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TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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TSAL7600 TSAL7600 18-Jul-08 | |
TSAL7200Contextual Info: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
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TSAL7200 2002/95/EC 2002/96/EC TSAL7200 18-Jul-08 | |
TSAL6100 application
Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 TSAL6100 application GaAs 1000 nm Infrared Diode, | |
08D diodeContextual Info: TSAL7600 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm iJ -V A Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
TSAL7600 TSAL7600 D-74025 ec-98 08D diode | |
diode chn 940
Abstract: chn 940 CT-98
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OCR Scan |
TSAL6200 L6200 D-74025 ct-98 diode chn 940 chn 940 CT-98 | |
TSAL5100Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package D escription TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
TSAL5100 TSAL5100 D-74025 21-Sep-98 | |
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Contextual Info: TSAL5300 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL5300 TSAL5300 D-74025 20-May-99 | |
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Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
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TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11 | |
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Contextual Info: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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TSAL6400 TSAL6400 08-Apr-05 | |
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Contextual Info: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL7200 TSAL7200 08-Apr-05 | |
TSAL6200Contextual Info: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL6200 TSAL6200 D-74025 20-May-99 | |
81008
Abstract: TSAL5300
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TSAL5300 TSAL5300 D-74025 20-May-99 81008 | |
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Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power |
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSAL7400
Abstract: high power infrared led
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TSAL7400 2002/95/EC 2002/96/EC TSAL7400 18-Jul-08 high power infrared led | |
high power infrared led
Abstract: TSAL7600
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TSAL7600 2002/95/EC 2002/96/EC TSAL7600 18-Jul-08 high power infrared led | |
TSAL6100
Abstract: high power infrared led
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 high power infrared led | |