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    10A Schottky

    Abstract: No abstract text available
    Text: TS862C15R 10A (150V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10 Tc=25°C, MAX. 1.32 3.0 ±0.3 IO V V 1.5 Max 150 0.90 4.5 ±0.2 9.3 ±0.5 10 +0.5 Characteristics TS862C15R Units Condition VRRM VF 0.9 ±0.3 Major characteristics


    Original     		PDF TS862C15R TS862C15R 10A Schottky

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    YA868C15

    Abstract: ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R
    Text: 整流ダイオード / Rectifier Diodes • 高耐圧ショットキーバリアダイオード High Voltage Schottky-Barrier Diodes（SBD） デュアル 2 in one-package 形 式 Device type YA862C12R YG862C12R TS862C12R YA865C12R YG865C12R TS865C12R


    Original     		PDF O220AB O220F YA971S6R YG971S6R YA972S6R YG972S6R YA868C15 ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R