TS032 Search Results

AM28F020

Contextual Info: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

TS-0322

Contextual Info: 3M Compact Wiremount Socket .100″ x .075″ for .050″ Pitch Cable 501 Series Thin profile Consumes less vertical space Economy in system layouts Uses standard .050" [1.27] cable and mating pin pattern • No change in current design • Retro-fit with no print changes

Contextual Info: “H Y U N D A I HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 120 ns access time • Compatible with JEDEC-Standard Commands

AM29F040B-90PD

Abstract: AM29F010B-70PD Am29F010B-70JD AM29F040B-90PF AM29F040B am29f040b-70jd AM29F040B-90JD am29f400bb am29f010b-70pf AM29F010B-120JD
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA October 10, 2008 Advanced Change Notification No: Subject: 2730 Obsolescence of 32-Pin PDIP packages, Commercial Temperature Range, and Specific Speed Grades of the products listed below

Contextual Info: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: .100" X .075" Compact Wiremount Socket .050" Pitch Cable Optional Metal Strain Relief 501 Series Thin profile Consumes less vertical space Economy in system layouts Uses standard .050 inch cable and pc board hole pattern No change in current design Retro-fit with no print changes

Contextual Info: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

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Abstract: 3M 501
Contextual Info: 3M Compact Wiremount Socket .100″ x .075″ for .050″ Pitch Cable 501 Series • • • • Thin profile Consumes less vertical space Economy in system layouts Uses standard .050" [1.27] cable and mating pin pattern • No change in current design

c727

Contextual Info: .100" x .075" Compact Wiremount Socket 50100 Series .050" Pitch Cable Optional Metal Strain Relief Thin profile Consumes less vertical space Economy in system layouts Uses standard .050 inch cable and pc board hole pattern No change in current design Retro-fit with no print changes

AM28F256

Abstract: A1H Transistor AM28F256-150PC
Contextual Info: FINAL Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e

Contextual Info: FINAL AMD£I Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V High performance — Access tim es as fast as 70 ns * — 5 seconds typical chip erase, including

Contextual Info: FINAL AMDH Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current

AM28F256A

Abstract: Am29Fxxx
Contextual Info: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

TS-0192

Abstract: 50126-B000 3414-XXXX CHG-2050-X01010-KXX TS-0189 7964-6500ec g1028 89120-0XXX TS-0718
Contextual Info: 3M”Interconnection System Connectors .100" Unshielded Systems — Wiremount Sockets .100 x .100 Contact Quantity Two-Piece Preaasembled Preassembled .100 x .875 Compact TS-0718 TS-0719 TS-0449+ TS-0322 02 03 04 05 06 07 09 10 3473-XXXX 3473-XXXX 89110-0XXX-XX

Contextual Info: FINAL AM D ii Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns

Contextual Info: AM D ii Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: .100" x .075" Compact Wiremount Socket .0 5 0 " P itc h C a b le O p tio n a l M e ta l S train R e lie f 5 0 1 0 0 S e r ie s • • • • Thin profile Consumes less vertical space Economy in system layouts Uses standard .050 inch cable and pc board

TS-0496

Contextual Info: 3M Interconnection System Connectors .100" Unshielded Systems — Wiremount Sockets Wiremount Sockets 3XXX Series % 891XX Series 501XX Series Two-Piece .100 x .100 T rtw a a lM Preassembled .100 x .075 Compact TS41718 TS-0719 TS-0449+ TS-0322 10 3473-XXXX

hot electron devices

Abstract: AM28F512A
Contextual Info: FINAL Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

AMD am2 socket pinout

Abstract: AMD socket AM2 pinout amd am2 pinout amd am2 6000 pin diagram AMD am2 socket pin amd am2 socket pin diagram AMD am2 socket pinout VOLTAGE hot electron devices pinout AM2 AMD socket AM2 pinout
Contextual Info: FINAL Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

d8693

Abstract: RYT Circulators amf-3d-008019.1 miteq amf-3f x-band waveguide isolators ps223 TS0303W3 JSD00114 H-BEND
Contextual Info: AST Lagerliste 2010 solange r u n f u a Verk icht! Vorrat re Hohlleiter- und Koaxialbauteile, vom Diplexer bis zu Leistungsverstärker, passive Bauteile wie z.B. Leistungswiderständen oder Dämpfungsglieder, und Kabel bis zu 65 GHz werden mit weit über 50% Preisnachlass angeboten.

M28F020

Contextual Info: FINAL A M D ii Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns