TS000 Search Results

DIM500GCM33-TS000

Abstract: DIM500GCM33-TS
Contextual Info: DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-2 DS6098-3 September 2014 LN31960 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)

DIM1500ESM33-TS000

Abstract: DIM1500ESM33-TS
Contextual Info: DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-5 DS6072-6 September 2014 LN31982 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

DIM400XSM45-TS000

Contextual Info: Data DIM400XSM45-TS000 Single Switch IGBT Module Replaces DS6150-1 DS6150-2 August 2014 LN31872 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)

DIM250PHM33-TS000

Abstract: DIM250PHM33-TS
Contextual Info: DIM250PHM33-TS000 Half Bridge IGBT Module Replaces DS6092-1 DS6092-2 September 2014 LN31957 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC

TS0005A

Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SMD 5.0x7.0 LVPECL SAW OSCILLATOR MODEL NO.: TS0005A

Contextual Info: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base With AlN Substrates

Contextual Info: DIM250PLM33-TS000 IGBT Chopper Module DS6108-1 June 2013 LN30636 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates

Contextual Info: Preliminary Information Data DIM800XSM45-TS000 Single Switch IGBT Module Replaces DS6089-2 DS6089-3 April 2013 LN30438 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)

Contextual Info: DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 LN30763 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK)

Contextual Info: DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 LN30764 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK)

DFM400XXM45-TS000

Contextual Info: DFM400XXM45-TS000 Fast Recovery Diode Module DS6128-1 October 2013 LN31067 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 800A Rating

DFM500XXM65-TS000

Contextual Info: Target Information DFM500XXM65-TS000 Fast Recovery Dual Diode Module DS6125-1 September 2013 LN30989 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates

DIM400XCM45-TS000

Contextual Info: Data DIM400XCM45-TS000 IGBT Chopper Module Replaces DS6111-3 DS6111-4 August 2014 LN31873 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)

DFM1000NXM33-TS000

Contextual Info: DFM1000NXM33-TS000 Fast Recovery Diode Module DS6094-1 April 2013 LN30404 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS

DFM250PXM33-TS000

Contextual Info: DFM250PXM33-TS000 Fast Recovery Diode Module DS6100-1 May 2013 LN30467 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS

Contextual Info: DIM1000NSM33-TS000 Single Switch IGBT Module DS6093-1 April 2013 LN30403 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

Contextual Info: DIM1000ECM33-TS000 IGBT Chopper Module DS6091-1 April 2013 LN30401 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates

Contextual Info: DFM800XXM45-TS000 Fast Recovery Diode Module DS6101-1 May 2013 LN30483 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating

Contextual Info: DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 LN30402 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 

Contextual Info: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates

DIM1000ECM33-TS000

Abstract: DIM1000ECM33-TS
Contextual Info: DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-2 DS6091-3 September 2014 LN31962 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)

Contextual Info: Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-3 DS6102-4 December 2014 LN32160 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)

DIM250PLM33-TS000

Abstract: DIM250PLM33-TS
Contextual Info: DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-2 DS6108-3 September 2014 LN31958 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)

Contextual Info: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC