TRIPLE Search Results

2sc3310

Contextual Info: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

2SD819

Contextual Info: 2SD819 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit In mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0S5.OMAX. FEATURES: eteLOMAX. • High Voltage :V c b q =1500V . Low Saturation Voltage :VcE sat =4V (Typ.) + 0.09 4.0— 0.03 (IC=3A, IB=0.8A) • High Speed

Contextual Info: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)

2SD1411

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)

74LS27 truth table

Contextual Info: TOSHIBA TC74HC27AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC27AP, TC74HC27AF, TC74HC27AFN Note The JEDEC SOP (FN) is not available in Japan. TRIPLE 3 -IN P U T NOR GATE The TC74HC27A is a high speed CMOS 3-INPUT NOR GATE fabricated with silicon gate C2MOS technology.

2sc3892a

Abstract: 2Sc3892a equivalent 2SC3892 c 1173
Contextual Info: 2SC3892A SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm . High Voltage : VcBO ^1500V I 5 . 5 i 0.5 . 0 3 .6± 0.3 3.0 ± 0 .3 . High Speed Switching Resistive Load tf=0.2ys(Typ.) . Collector Metal is Fully Covered with Mold Resin.

74als1010

Abstract: 74ALS1010A 54als1010
Contextual Info: TYPES SN54ALS1010A, SN74ALS1010A TRIPLE 3-INPUT POSITIVE-NAND BUFFERS 0 2 6 6 1 , A P R IL 1 9 8 2 — R E V IS E D D E C E M B E R 1 9 8 3 Buffer Version o f 'A L S 1 0 SN 54 A LS 1 0 1 0 A . . . J PACKAGE Package O ptions Include Both Plastic and Ceram ic C h ip Carriers in Addition to Plastic

MG50G2CL3

Abstract: Mg50G2cl mg50g2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)

2SB907

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage

MG15G1AL3

Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)

Contextual Info: SN54LS15, SN54S15, SN74LS15, SN74S15 TRIPLE 3 INPUT POSITIVE AND GATES WITH OPEN-COLLECTOR OUTPUTS A P R IL 1 9 8 5 — R E V IS E D M A R C H Package Options Include Plastic "Sm all Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4157 SWITC HIN G REGULATOR AND HIGH VOLTAGE SWITCHI NG INDUSTRIAL APPLICATIONS Unit in nun APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. . Ç63 .2 ± 0 .2 1 5-9MAX. . Excellent Switching Times : tr= 0 . 5 y s M a x . , tf=0.5(Js(Max.) (lc=5A)

2SD1433

Contextual Info: 2SD1433 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES: . High Voltage : V^go=1500V . Low Saturation Voltage : vCE sat =5V (Max.) (IC=6A, Ib =1.2A) . High Speed : tf=1.0/js (Max.) . Glass Passivated Collector-Base Junction

S2000F

Abstract: TS-1042
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE S2000F COLOR TV HORIZONTAL OUTPUT APPLICATIONS. U n it in mm COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES: . High V o ltag e : V^j;s=1500V . Low S a tu r a tio n V o ltag e : Vqjt s a t =5V(Max.) . High Speed

Contextual Info: SN54ALS11A, SN54AS11, SN74ALS11A, SN74AS11 TRIPLE 3-INPUT POSITIVE-AND GATES SDAS009C - MARCH 1984 - REVISED DECEMBER 1994 • Package Options Include Plastic Small-Outline D Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs

MG75M2CK1

Abstract: tkp7
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

SL 2128 dip 8

Contextual Info: TISP7Ö72F3, TISP7082F3 TRIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SLPSEI5 - MARCH I9M - REVISED SEPTEMBER ¡994 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • lon-lmplanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

MG150H2CL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)

Contextual Info: S IM 54ALS1 0 1 0A , SIM 74ALS1 □ 1 0 A TRIPLE 3 INPUT POSITIVE N A N D B U FFE R S D 2 6 6 1 , A P R IL 1 9 8 2 • Buffer Version of 'A LS 10A • Package Outline” Addition Ceramic S N 74A LS 1010A . . . D O R N • -R E V IS E D M A Y 1 9 8 6 S N 5 4 A L S 1 0 1 0 A . . . J PACKAGE

2SC3180N

Abstract: ic 4510
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. U n it in mm • C o m plem en tary to 2SA 1263N • R ecom m end for O u tp u t Stage. _ H ig h F id elity A udio F req u en cy A m plifier C H A R A C TE R ISTIC C ollector-B ase V oltage C o llecto r-E m itter V oltage

2SD1088

Abstract: igniter 2sd1088 TOSHIBA
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1088 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. U n i t in m m HIGH VOLTAGE SWITCHING APPLICATIONS. 1U.3MAX. 5Ä 3T FEATURES: . H i g h DC C u r r e n t G a i n : h F E = 2 0 0 0 ( M i n .) MAXIMUM RATINGS

ic 109b

Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Contextual Info: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling

2SD1410

Abstract: 2S0141
Contextual Info: SILICON NPN TRIPLE DIFFUSE TYPE DARLINGTON POWER 2SD1410 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 03.2ÍQ.2 FEATURES: . High DC Current Gain : hp£= 2000(Min.) (Vce= 2V, Ic= 2A) MAXIMUM RATINGS (Ta=25°C)