CQDD-12M
Abstract: CQDD-12N
Text: CQDD-12M CQDD-12N SURFACE MOUNT 12 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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CQDD-12M
CQDD-12N
CQDD-12M
100mA
12-February
CQDD-12N
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CQDD-16M
Abstract: No abstract text available
Text: CQDD-16M CQDD-16N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 16 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-16M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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Original
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CQDD-16M
CQDD-16N
CQDD-16M
100mA
12-February
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Untitled
Abstract: No abstract text available
Text: CQDD-8M CQDD-8N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 8 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-8M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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100mA
12-February
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TRIAC 8 Amp 800
Abstract: No abstract text available
Text: CQDD-8M CQDD-8N SURFACE MOUNT 8 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-8M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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100mA
12-February
TRIAC 8 Amp 800
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CQ89-2M
Abstract: CQ89-2N
Text: CQ89-2M CQ89-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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CQ89-2M
CQ89-2N
CQ89-2M
OT-89
12-February
CQ89-2N
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CQDD-16M
Abstract: CQDD-16N
Text: CQDD-16M CQDD-16N SURFACE MOUNT 16 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-16M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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Original
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CQDD-16M
CQDD-16N
CQDD-16M
100mA
12-February
CQDD-16N
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PDF
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Untitled
Abstract: No abstract text available
Text: CQDD-25M CQDD-25N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 25 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-25M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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Original
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CQDD-25M
CQDD-25N
CQDD-25M
100mA
12-February
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PDF
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marking 4n
Abstract: 10 amp triac
Text: CQD-4M CQD-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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Original
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12-February
marking 4n
10 amp triac
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CQDD-25M
Abstract: CQDD-25N
Text: CQDD-25M CQDD-25N SURFACE MOUNT 25 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-25M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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Original
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CQDD-25M
CQDD-25N
CQDD-25M
100mA
12-February
CQDD-25N
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PDF
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Untitled
Abstract: No abstract text available
Text: CQDD-12M CQDD-12N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 12 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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Original
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CQDD-12M
CQDD-12N
CQDD-12M
100mA
12-February
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PDF
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Untitled
Abstract: No abstract text available
Text: CQ89-2M CQ89-2N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering
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Original
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CQ89-2M
CQ89-2N
CQ89-2M
OT-89
12-February
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PDF
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marking 4n
Abstract: CQ223-4M CQ223-4N TRIAC 60A WA200
Text: CQ223-4M CQ223-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in
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Original
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CQ223-4M
CQ223-4N
CQ223-4M
OT-223
12-February
marking 4n
CQ223-4N
TRIAC 60A
WA200
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PDF
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Untitled
Abstract: No abstract text available
Text: CQ223-4M CQ223-4N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in
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CQ223-4M
CQ223-4N
CQ223-4M
OT-223
12-February
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AC12F
Abstract: AC12FG NEC AC12 AC12DGM AC12EGM AC12FGM AC12D
Text: NEC ELECTRON DEVICE T R IA C S A C 1 2 D G M to A C 1 2 F G M 12 A MOLD TRIAC The AC12DGM to AC12FGM are all diffused mold type triac granted PACKAGE DIMENSIONS 10.5 MAX. RMS On-state current 12 Amps, w ith rated voltages up to 600 volts. U n it: m m 4.8 MAX.
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OCR Scan
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AC12DGM
AC12FGM
AC12FGM
T0-220AB
AC12EGM
AC12FG
NECTOKJ22686
AC12F
NEC AC12
AC12D
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BCR2PM-12RE R07DS1239EJ0200 Previous: REJ03G1468-0100 Rev.2.00 Dec 24, 2014 600V - 2A - Triac Low Power Use Features • Insulated Type • Planar Passivation Type • The product guaranteed maximum junction temperature 150°C. • IT (RMS) : 2 A
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BCR2PM-12RE
R07DS1239EJ0200
REJ03G1468-0100)
PRSS0003AA-B
O-220F
BCR2PM-12RE
Non-repe2886-9022/9044
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Triac 12F
Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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OCR Scan
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T-63-65"
TRIAC210-.
TRIAC350-.
FD150-.
FD210-.
FD280-.
FD350-.
IRCI210-.
IRCI230-.
IRCI350-.
Triac 12F
irkt 40
thyristor silicon WAFER chips
31017
triac 1200V
21PT
36MB-A
40HF
70HF
85HF
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BCR12PM
Abstract: No abstract text available
Text: Preliminary Datasheet BCR12PM-12LC R07DS1242EJ0400 Previous: REJ03G1261-0300 Rev.4.00 Dec 24, 2014 600V – 12A - Triac Medium Power Use Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type
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BCR12PM-12LC
R07DS1242EJ0400
REJ03G1261-0300)
PRSS0003AA-B
O-220F
R07DS1242EJ0400
BCR12PM
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BCR6CM-12RA
Abstract: No abstract text available
Text: Preliminary Datasheet BCR6CM-12RA R07DS1150EJ0100 Rev.1.00 Jan 24, 2014 600V - 6A - Triac Medium Power Use Features • IT RMS : 6 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline
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BCR6CM-12RA
R07DS1150EJ0100
PRSS0004AG-A
O-220AB)
BCR6CM-12RA
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BCR08DS-14A R07DS0258EJ0300 Rev.3.00 Dec 01, 2014 700V-0.8A-Triac Low Power Use Features • Planar Passivation Type • Surface Mounted Type • Completed Pb Free • IT RMS : 0.8 A • VDRM :700 V • IFGTI, IRGTI, IRGTIII : 5 mA
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Original
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BCR08DS-14A
R07DS0258EJ0300
00V-0
PRSP0004ZB-A
PRSP0004ZA-A
OT-223)
Repetitive2886-9022/9044
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BCR25CM-12LB R07DS1152EJ0100 Rev.1.00 Jan 29, 2014 600V - 25A - Triac Medium Power Use Features • IT RMS : 25 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 50 mA • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type
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BCR25CM-12LB
R07DS1152EJ0100
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BCR08AM-14A
Abstract: No abstract text available
Text: Preliminary Datasheet BCR08AM-14A R07DS1226EJ0300 Rev.3.00 Jul 31, 2014 700V-0.8A-Triac Low Power Use Features • IT RMS : 0.8 A • VDRM :700 V • IFGTI, IRGTI, IRGTIII : 5 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A
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BCR08AM-14A
R07DS1226EJ0300
00V-0
PRSS0003EA-A
Notes2886-9022/9044
BCR08AM-14A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BCR1AM-12A R07DS0177EJ0400 Rev.4.00 Jul 31, 2014 600V-1A-Triac Low Power Use Features • IT RMS : 1 A • VDRM : 600 V • IFGTI , IRGTI, IRGT III : 7 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A
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BCR1AM-12A
R07DS0177EJ0400
00V-1A-Triac
PRSS0003EA-A
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BCR20CM-12LB
Abstract: No abstract text available
Text: Preliminary Datasheet BCR20CM-12LB R07DS1151EJ0100 Rev.1.00 Jan 29, 2014 600V - 20A - Triac Medium Power Use Features • IT RMS : 20 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III :30 mA(20mA) Note6 • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type
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BCR20CM-12LB
R07DS1151EJ0100
BCR20CM-12LB
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BCR5CM-12RA R07DS1149EJ0100 Rev.1.00 Jan 23, 2014 600V - 5A - Triac Medium Power Use Features • IT RMS : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline
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Original
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BCR5CM-12RA
R07DS1149EJ0100
PRSS0004AG-A
O-220AB)
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PDF
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