TRAYS STMICROELECTRONICS Search Results

qfn 6 x 6 TRAY

Abstract: QFn Package tray pd0018 tfBGA 8 x 8 tray package tray outline ufdfpn 639X qfn 5 x 6 TRAY qfn tray 5 mm x 6 mm qfn 5 x 5 TRAY
Contextual Info: PD0018 Packing information Tray for Ball Grid Array and QFN packages Introduction Tray for Ball Grid Array and QFN UFDFPN packages can be supplied in tray packing. Refer to Table 1 for the list of packages supplied in trays. The objective of this document is provide a detailed description of the tray.

pd0008

Abstract: tray 8 x 8 TSOP TRAY 40 PIN TSOP package tray N1N213 Package and Packing Information ST
Contextual Info: PD0008 Packing information Tray for TSOP packages type 1 Introduction TSOP type-1 packages can be supplied in tray packing. Refer to Table 1 for the list of TSOP type-1 packages supplied in trays. The objective of this document is provide a detailed description of the tray. It applies to all

rx2 RMC

Abstract: Tyco A1029-B A1029-B gps m 89 pin configuration testo rs232 cable a1029 DKS1029-B testo rs232 A1029D egnos waas gps module
Contextual Info: Get your Position! A1029-B/D Easy plug-in GPS Modules The A1029-B as well as the A1029-D expand the product line of Tyco's GPS receiver modules based on STMicroelectronics' STA2051 base-band chip. Offering a high level of performance at ultra-low power consumption, these receivers allow an easy plug-in to motherboards, show durability towards shock and

STMicroelectronics bake time chart

Abstract: water pressure i2c
Contextual Info: APPLICATION NOTE SOLDERING RECOMMENDATIONS and PACKAGING INFORMATION by the Micro Divisions INTRODUCTION STMicroelectronics supports various package types to adapt MCUs to customer requirements. Beside the available mounting technology SMD or Throughhole , the choice is often

AN2639

Abstract: top-side marking STMicroelectronics LQFP SM817 TOPSIDE MARKING PDIP STMicroelectronics AN2034 J-STD-020D J-STD-020d.1 disadvantages of microcontroller JESD22A111 VFQFPN thermal resistance
Contextual Info: AN2639 Application note Soldering recommendations and package information for Lead-free ECOPACK microcontrollers Introduction STMicroelectronics microcontrollers support various types of Lead-free ECOPACK® package to meet customer requirements. The mounting technologies are Surface mount technology SMT , and Through hole

GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICE

Abstract: GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICES shelf life STMICROELECTRONICS MSL Corn moisture sensitive handling and packaging
Contextual Info: GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICES According to the specification J-STD-020 * Technical note by CORPORATE PACKAGE DEVELOPMENT (*) issued jointly by EIA/Jedec Jc-14.1 and IPC B-10a Committees handling SMDs in damproof bags Materials Desiccant

5962-06237

Abstract: RHF43BK-01V RHF43B RHF43BK1 RHF43BK2
Contextual Info: RHF43B RAD-hardened Precision bipolar single operational amplifier Features • High immunity to radiations, 300kRad TID; SEL immune at 68MeV/cm²/mg LET ions. ■ Rail-to-rail input/output ■ 8MHz gain bandwidth at 16V ■ Stable for gain ≥ 5 ■ Low input offset voltage: 100µV typ

RHF43B

Abstract: RHF43BK-01V RHF43BK1 RHF43BK2 68MeV
Contextual Info: RHF43B RAD-hardened precision bipolar single operational amplifier Features • High immunity to radiations, 300kRad TID; SEL immune at 68MeV/cm²/mg LET ions. ■ Rail-to-rail input/output ■ 8MHz gain bandwidth at 16V ■ Stable for gain ≥ 5 ■ Low input offset voltage: 100µV typ

5962-06237

Contextual Info: RHF43B RAD-hardened precision bipolar single operational amplifier Features • High immunity to radiations, 300kRad TID; SEL immune at 68MeV/cm²/mg LET ions. ■ Rail-to-rail input/output ■ 8MHz gain bandwidth at 16V ■ Stable for gain ≥ 5 ■ Low input offset voltage: 100µV typ

5962-06237

Abstract: RHF43BK-01V RHF43B RHF43BDIE2V RHF43BK1 RHF43BK2 N1215
Contextual Info: RHF43B RAD-hardened precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Output rail-to-rail

Ablebond 8390

Abstract: sil154 kyro PowerVR B1G5 HC100 PowerVR imagination technologies bitblt kyro 2 Bt868
Contextual Info: Integrated 2D/3D graphics accelerator – Product Overview PRELIMINARY DATA FEATURES • PowerVR Series 3 arcade performance 3D ● DirectX7 Flexible Vertex Format support ● 8 layer Multi-texturing ● Twin high performance texturing pipelines ● Full triangle setup hidden surface

trays STMICROELECTRONICS

Contextual Info: SD1458 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –55 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ HIGH SATURATED POWER CAPABILITY ■ DESIGNED FOR HIGH POWER LINEAR

SD1407

Abstract: vk200 VK-200 vk 200 SD140
Contextual Info: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

TH416

Abstract: SD1729
Contextual Info: SD1729 TH416 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 130 W PEP WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon

SD1446

Abstract: arco 468 M113
Contextual Info: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon

b963

Contextual Info: ADSL Frequency Filter Inductors Excellent THD performance in a small footprint Used exclusively for frequency filtering SMT compact footprint Matched to various manufacturers’ ADSL chipsets Electrical Specifications @ 25°C - Operating Temperature -40°C to +85°C

SD1274-01

Abstract: M113 F136
Contextual Info: SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for

Contextual Info: SD1398 RF POWER BIPOLAR TRANSISTORS 850-960 MHZ APPLICATIONS FEATURES SUMMARY • 850 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ GOLD METALLIZATION ■ POUT = 6.0 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1398 is a gold metallized epitaxial silicon

TH560

Contextual Info: SD1730 TH560 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 12 dB GAIN

Contextual Info: SD1275-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 40 W MIN. WITH 9.0 dB GAIN DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for

capacitor 100uF 63V

Contextual Info: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF

Contextual Info: SD1423 RF POWER BIPOLAR TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS FEATURES SUMMARY • 800 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ CLASS AB LINEAR OPERATION ■ POUT = 15 W MIN. WITH 8.0 dB GAIN

SD1487

Abstract: 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465
Contextual Info: SD1487 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 12.5 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 100 W MIN. WITH 12.0 dB GAIN DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon

electrolytic capacitor 47uF

Contextual Info: SD4600 RF POWER BIPOLAR TRANSISTORS CELLULAR BASE STATION APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ 860-960 MHz ■ 26 VOLTS ■ EFFICIENCY 50% MIN. ■ POUT = 60 W MIN. WITH 7.5 dB GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base