TRANSITOR 2F Search Results

MARKING rks

Abstract: BFR949F transistor bf 186
Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

3904 ic

Abstract: 3904 NPN k 4213 transistor k 4213 BFR340L3
Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

fbs MARKING TRANSISTOR

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR360L3

Contextual Info: BFR360L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor k 4213

Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

MJE 131

Abstract: BFR340L3
Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP36

Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

TRANSISTOR MARKING NK

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

transistor 1107

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

BFP36

Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

TRANSISTOR MARKING NK

Abstract: transistor bf 271 p 605 transistor equivalent BFR340T
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP360W

Abstract: BFP36
Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Transistor BC 1078

Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
Contextual Info: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data
High gain low noise RF transistor 3
Small package 1.4 x 0.8 x 0.59 mm 2 4
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain

Contextual Info: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data
High gain low noise RF transistor 3
Small package 1.4 x 0.8 x 0.59 mm 2 4
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain

Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFR360T

Abstract: SC75
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor marking c1 ghz

Abstract: transistor marking c3 ghz
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

Contextual Info: BFR360L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR380L3

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR380T

Abstract: SC75
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

K 3677

Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!