Untitled
Abstract: No abstract text available
Text: I . I» I Provisional Data Sheet No. PD 9 .1 292B International l R Rectifier HEXFET PO W ER M O S FE T IRFY440CM N-CHANNEL Product Summary 500 Volt, 0.85Î2 H E X F E T HEXFET technology is the key to International Rectifier’s advanced line of power M O SFET transistors. The effi
|
OCR Scan
|
IRFY440CM
|
PDF
|
1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
|
OCR Scan
|
semi-820
BYX22-400
BYX22-600
BYX22-800
BYX26-60
YX26-150
BYX36-1
BYX36-300
1.0 k mef 250
ME4003
ME4002
MA0411
transistor me6101
transistor BC 172B
2N2959
transistor bf 175
2N5173
2n3072
|
PDF
|
2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350
|
OCR Scan
|
2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N4401
|
PDF
|
TRANSISTORS sec 537
Abstract: No abstract text available
Text: PD-91292D POWER MOSFET THRU-HOLE TO-257AA IRFY440C, IRFY440CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY440C 0.85 Ω 7.0A Ceramic IRFY440CM 0.85 Ω 7.0A Ceramic HEXFET® MOSFET technology is the key to International
|
Original
|
PD-91292D
O-257AA)
IRFY440C,
IRFY440CM
IRFY440C
5M-1994.
O-257AA.
TRANSISTORS sec 537
|
PDF
|
TO-257AA
Abstract: IRFY440C IRFY440CM
Text: PD-91292D POWER MOSFET THRU-HOLE TO-257AA IRFY440C, IRFY440CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY440C 0.85 Ω 7.0A Ceramic IRFY440CM 0.85 Ω 7.0A Ceramic HEXFET® MOSFET technology is the key to International
|
Original
|
PD-91292D
O-257AA)
IRFY440C,
IRFY440CM
IRFY440C
5M-1994.
O-257AA.
TO-257AA
IRFY440C
IRFY440CM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94197B POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International
|
Original
|
94197B
O-257AA)
IRFY9140
IRFY9140M
IRFY9140,
IRFY9140M
5M-1994.
O-257AA.
|
PDF
|
IRF P CHANNEL MOSFET 10A 100V
Abstract: SEC IRF 640 IRFY9140 IRFY9140C IRFY9140CM IRFY9140M
Text: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International
|
Original
|
94197C
O-257AA)
IRFY9140,
IRFY9140M
IRFY9140
5M-1994.
O-257AA.
IRF P CHANNEL MOSFET 10A 100V
SEC IRF 640
IRFY9140
IRFY9140C
IRFY9140CM
IRFY9140M
|
PDF
|
TRANSISTORS sec 537
Abstract: No abstract text available
Text: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International
|
Original
|
94197C
O-257AA)
IRFY9140,
IRFY9140M
IRFY9140
5M-1994.
O-257AA.
TRANSISTORS sec 537
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
|
OCR Scan
|
IRFY430CM
500Volt,
S5452
|
PDF
|
I1092
Abstract: No abstract text available
Text: Provisional Data Sheet No. PO 9.1287B International I G R Rectifier HEXFET PO W E R M O S F E T IRFY140CM N -C H A N N E L Product Summary 100 Volt, 0.077Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
|
OCR Scan
|
1287B
IRFY140CM
D0S4S11
I1092
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1290B International ICR Rectifier HEXFET PO W ER M O S FE T IRFY340CM N-CHANNEL Product Summary 400 Volt, 0.55Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
|
OCR Scan
|
1290B
IRFY340CM
6C731
|
PDF
|
I1092
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1289B International IOR Rectifier HEXFET PO W E R M O S F E T IR FY240C M N-CHANNEL Product Summary 200Volt, 0.18Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors. The effi
|
OCR Scan
|
1289B
FY240C
200Volt,
6C730
I1092
|
PDF
|
16 pin ic sg3524
Abstract: SG3524 inverter ic 3524 application IC SG3524N LC 3524 mode of operation 16 pin ic sg3524 SGS SG2524 push pull inverters circuit diagram sg3524 converter pwm oscillator ic 3524
Text: S G S -1 H 0 M S 0 N ^ 7 # . R^D g[Hj(5 l^il(gir^(ô)^0(gl SG 2524 SG 3524 REGULATING PULSE WIDTH MODULATORS • COMPLETE PWM POWER CONTROL CIR CUITRY ■ UNCOM MITTED OUTPUTS FOR SINGLE ENDED OR PUSH PULL APPLICATIONS - LOW STANDBY CURRENT 8mA TYPICAL
|
OCR Scan
|
SG2524
SG3524
300KHz
SG2524,
SG3524
SG2524
DDS1S40
16 pin ic sg3524
inverter ic 3524 application
IC SG3524N
LC 3524
mode of operation 16 pin ic sg3524
SGS SG2524
push pull inverters circuit diagram
sg3524 converter
pwm oscillator ic 3524
|
PDF
|
500mA H-bridge
Abstract: CS-3710M15
Text: CS-3710 0.5A Fully Protected Dual H-Bridge Driver D escription The CS-3710 is a smart dual 0.5A Hbridge driver u sed in microprocessor controlled stepper motor system s. The CS-3710 provides bidirectional current using tw o independent 0.5A H -bridge drivers. On chip com m utation diod es
|
OCR Scan
|
CS-3710
00Q35TD
CS-3710M15
50b755b
500mA H-bridge
|
PDF
|
|
|
q 1363
Abstract: No abstract text available
Text: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International
|
Original
|
PD-91293C
IRFY9130C,
IRFY9130CM
O-257AA)
IRFY9130C
IRFY9130CM
inverte16
5M-1994.
O-257AA.
q 1363
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International
|
Original
|
91294D
O-257AA)
IRFY9140C,
IRFY9140CM
IRFY9140C
5M-1994.
O-257AA.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International
|
Original
|
PD-91293C
IRFY9130C,
IRFY9130CM
O-257AA)
IRFY9130C
O-257AA
5M-1994.
O-257AA.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 91289D POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number ID Eyelets IRFY240C RDS(on) 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic HEXFET® MOSFET technology is the key to International
|
Original
|
91289D
O-257AA)
IRFY240C
IRFY240CM
IRFY240CM
cho16
5M-1994.
O-257AA.
|
PDF
|
NEC B536
Abstract: 2SD382 2SB536 NEC 2sD381 b536 2SB537 B-536 nec b 537 2SB536 b537
Text: NEC SILICON POWER TRANSISTORS HfCTR0N“ 2SB536,2SB537/2SD381,2SD382 AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING PNP/NPN SILICON EPITAXIAL TRANSISTOR DESCR IPTIO N The 2SB536, 2SB537 and 2SD381, 2SD382 are silicon epitaxial transistors intended for a wide variety of
|
OCR Scan
|
2SB536
2SB537/2SD381
2SD382
2SB536,
2SB537
2SD381,
2SD382
537/2S
2SB536/2SD381
NEC B536
2SB536 NEC
2sD381
b536
B-536 nec
b 537
b537
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International
|
Original
|
PD-91289E
O-257AA)
IRFY240C
IRFY240CM
IRFY240C
O-257AA
O-257AA.
MIL-PRF-19500
|
PDF
|
BC517 spice model
Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information
|
Original
|
VN2410L
BC517 spice model
bc547 spice model
bc548 spice model
h1 m6c
MPS6595
bc557 Spice Model
BF245 A spice
spice model bf199
BC640 SPICE model
transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
|
PDF
|
IRFY240C
Abstract: HEXFET pinout IRFY240CM
Text: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International
|
Original
|
PD-91289E
O-257AA)
IRFY240C
IRFY240CM
IRFY240C
O-257AA
O-257AA.
MIL-PRF-19500
HEXFET pinout
IRFY240CM
|
PDF
|
tda7294
Abstract: TDA7294 application note
Text: n * 7 z j S C S -T H O M S O N # . TDA7294 IM M i[L i« ô M ]0 (ê § 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY ADVANCE DATA • VERY HIGH OPERATING VOLTAGE RANGE (±40V ■ DMOSPOWER STAGE ■ HIGH OUTPUT POWER (UP TO 100W MU SIC POWER) ■ MUTING/STAND-BY FUNCTIONS
|
OCR Scan
|
TDA7294
TDA7294
Multiwatt15
2200jiF
1N4148
TDA7294 application note
|
PDF
|
Dose
Abstract: transistor study Marconi radiation hard
Text: Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates
|
Original
|
300Krad
Dose
transistor study
Marconi radiation hard
|
PDF
|
