Untitled
Abstract: No abstract text available
Text: APL5331 3A Bus Termination Regulator Features General Description • The APL5331 linear regulator is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination. The APL5331 integrates two power transistors to source or sink current up to 3A.
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APL5331
APL5331
O-252
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actel 1240a
Abstract: TI1139 UI02 1280xl actel 1240xl 132 pga UJ-01 U1H-18 110E06 SI 1020A Actel A1225
Text: Actel Device Reliability Report Actel’s field programmable gate arrays FPGAs are currently available in five product families—ACT 1, ACT 2, 1200XL, 3200DX, and ACT 3. The ACT 1 family consists of the A1010 and A1020, which are 1200- and 2000-gate FPGAs,
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1200XL,
3200DX,
A1010
A1020,
2000-gate
A1225,
A1240,
A1280
1200XL
A1225XL,
actel 1240a
TI1139
UI02
1280xl
actel 1240xl 132 pga
UJ-01
U1H-18
110E06
SI 1020A
Actel A1225
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transistor A1010
Abstract: A1020 transistor ACTEL A1010 32140DX A1010 A1020 A1225A A1225XL A1240A A1240XL
Text: Testing and Programming Actel Field Programmable Gate Arrays FPGAs Testing has long been a struggle for users of masked gate arrays. To avoid board-level, system-level, or even possible field failures, the system designer must expend great effort in developing test vectors for gate array designs. Even after the
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ACTEL burn-in
Abstract: antifuse programming technology antifuse
Text: Application Note Testing and Burn-In of Actel FPGAs I n tro du ct i on Burn-in tests, for operating devices dynamically at a high temperature and extrapolating the failure rate to typical operating conditions, are a requirement for HiRel applications on logic devices. System designers must spend
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Untitled
Abstract: No abstract text available
Text: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN2410
VN2410
DSFP-VN2410
A102907
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VN2406L-G
Abstract: No abstract text available
Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN2406
VN2406
DSFP-VN2406
A102907
VN2406L-G
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MARKING VN
Abstract: vn0606
Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0606
VN0606
DSFP-VN0606
A102907
MARKING VN
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Untitled
Abstract: No abstract text available
Text: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0808
VN0808
DSFP-VN0808
A102907
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021 KO capacitor 470uF
Abstract: apl5331 transistor a102 APL5331G5C-TR APL5331KAC-TR APL5331KC-TR APL5331U5C-TR APM2300 STD-020C 3CKV
Text: APL5331 3A Bus Termination Regulator Features General Description • Provide Bi-direction Current The APL5331 linear regulator is designed to provide a - Sourcing or Sinking Current up to 3A regulated voltage with bi-directional output current for • 1.25V/0.9V Output for DDR I/II Applications
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APL5331
APL5331
O-263
O-252
021 KO capacitor 470uF
transistor a102
APL5331G5C-TR
APL5331KAC-TR
APL5331KC-TR
APL5331U5C-TR
APM2300
STD-020C
3CKV
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Untitled
Abstract: No abstract text available
Text: APL5331 3A Bus Termination Regulator Features • • • • General Description Provide Bi-direction Current The APL5331 linear regulator is designed to provide a regulated voltage with bi-directional output current for - Sourcing or Sinking Current up to 3A
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APL5331
APL5331
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apl5331
Abstract: JEDEC Jc-11 free A102 APM2300
Text: APL5331 3A Bus Termination Regulator Features General Description • The APL5331 linear regulator is designed to provide a regulated voltage with bi-directional output current for Provide Bi-direction Current - Sourcing or Sinking Current up to 3A • •
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APL5331
APL5331
JEDEC Jc-11 free
A102
APM2300
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Untitled
Abstract: No abstract text available
Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN1206
DSFP-VN1206
A102108
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Untitled
Abstract: No abstract text available
Text: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0300
DSFP-VN0300
A102108
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Untitled
Abstract: No abstract text available
Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN3515
DSFP-VN3515
A102108
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DSFP-VN0104
Abstract: No abstract text available
Text: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0104
VN0104
DSFP-VN0104
A102907
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VN0106
Abstract: No abstract text available
Text: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0106
VN0106
DSFP-VN0106
A102907
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ic 0808 pin diagram
Abstract: HIPAC Semiconductor HPL5331 HPL5331G5C-TR HPL5331KAC-TR HPL5331KC-TR HPL5331U5C-TR marking a8 SOP-8
Text: HPL5331 3A Bus Termination Regulator Features General Description Cont. • On-chip thermal shutdown provides protection against any combination of overload that would create excessive junction temperature. The output voltage of HPL5331 track the voltage at VREF pin. A resistor
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HPL5331
HPL5331
Sourcin80
O-263
O-252
ic 0808 pin diagram
HIPAC Semiconductor
HPL5331G5C-TR
HPL5331KAC-TR
HPL5331KC-TR
HPL5331U5C-TR
marking a8 SOP-8
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APL5332
Abstract: PCT resistor 1.5k A102 APM2300A marking 303w
Text: APL5332 0.8V Reference LDO with Source-Sink & Output Selection Functions Features General Description • LDO with Source and Sink Capabilities • Single Input Voltage The APL5332 is a precise CMOS LDO with source sink and output selection functions. The APL5332 offers 2%
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APL5332
APL5332
PCT resistor 1.5k
A102
APM2300A
marking 303w
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A1022
Abstract: D601A c2480 C4561 S-Mini D1938 transistor A1022 D602A XN06506
Text: Transistors Selection Guide by Applications and Functions •5-Pin S-Mini Type (D8)*5-Pin Mini Type (D15)*6-Pin S-Mini Type (D9)*6-Pin Mini Type (D16) Package Transistor, FET # Transistors (XN: 5- and 6-Pin Mini Type Package, XP: 5- and 6-Pin S-Mini Type Package)
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XN6501
XP6501
D601A
C4444
C2480
C3904
C4561
XN6543
C2404
D1149
A1022
D601A
S-Mini
D1938
transistor A1022
D602A
XN06506
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D1915
Abstract: D1915 Transistors TRANSISTOR D1915 c3904 D1915 transistor B709A A1022 xp5555 XN4501 XP1201
Text: Transistors Selection Guide by Applications and Functions •5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)
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XN1401
XP1401
XN1501
XP1501
XN1601
XP1601
XN1B301
XP1B301
XN1C301
XP1C301
D1915
D1915 Transistors
TRANSISTOR D1915
c3904
D1915 transistor
B709A
A1022
xp5555
XN4501
XP1201
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D1915
Abstract: D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor XN1111 mini type (D7)
Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)
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XN1111
XP1111
XN1112
XP1112
XN1113
XP1113
XN1114
XP1114
XN1115
XP1115
D1915
D1915 Transistors
d1915f
TRANSISTOR D1915
D1915 transistor
mini type (D7)
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TRANSISTOR D1915
Abstract: D1915 transistor D1915 Transistors D1915 n227
Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) • 5 Pin Mini Type (D11) * 6 Pin S Mini Type (D7) • 6 Pin Mini Type (D12) Package Transistor, FET A Prelim inary •R e s is to r Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)
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XN1111
XP1111
XN1112
XP1112
XP1113
XN1114
XP1114
XN1115
XP1115
XN1116
TRANSISTOR D1915
D1915 transistor
D1915 Transistors
D1915
n227
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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transistor buz 36
Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A
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23StQS
T0-220
O-220
BUZ10S2
Z72AL
Z73AL
O-218
transistor buz 36
A1301 transistor
Z346
z309
A3206A
A1306A
z326
A1320A
A1610-A2
Z22A
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