TRANSISTORS 640 JS Search Results

CD4539

Abstract: CD4529BCN CD4529BC CD4529BM truth table of 4539
Contextual Info: CD4529BM/CD4529BC WA National JS t Semiconductor CD4529BM/CD4529BC Dual 4-Channel or Single 8-Channel Analog Data Selector General Description Features The CD4529B is a dual 4-channel or a single 8-channel analog data selector, Implemented with complementary

Contextual Info: Jsii.su«_/ ^zmi-tonauctoi iJ-'ioau.cti, One. cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS 400 (min.) DME 1025 - 1150 MHz

IOR 450 M

Abstract: c468 c467 c463 TRANSISTORS 640 JS
Contextual Info: International S Rectifier P D - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10 js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to

Contextual Info: TLVD4200 www.vishay.com Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • High brightness • Wide viewing angle • Categorized for luminous flux • Available in DH red • Tinted clear package 19231 • Low power dissipation

Contextual Info: HARRIS SEMICOND SECTOR 2?E D • 4302271 0G2D4bl “J ■ HAS T ranslstors File Num ber MJE13006 15.89 T~-33- !3 H igh-S peed Silicon N -P -N Pow er Transistors Features:

TRANSISTORS 640 JS

Abstract: LC-1 2SD1616A
Contextual Info: Transistors 2SD1616A USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage VcEO Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse)

CD4539

Abstract: CD4539B CD4529BC MC14529 CD4529B MC14529B cd4539bc CD4529BM CD4529 640N
Contextual Info: CD4529BM/CD4529BC NATIONAL SEtlICOND - C L O G I O IDE D | b S O l l E E OObSTTt. E | 553 National ÜSfl Semiconductor •7 ^ 5 7 v / CD4529BM/CD4529BC Dual 4-Channel or Single 8-Channel Analog Data Selector Features General Description 3.0V to 15V ■ Wide supply voltage range

CD4529BC

Abstract: CD4539B
Contextual Info: CD4529BM/CD4529BC NATIONAL SEtlICOND - C L O G I O IDE D | b S O l l E E OObSTTt. E | 553 National ÜSfl Semiconductor •7 ^ 5 7 v / CD4529BM/CD4529BC Dual 4-Channel or Single 8-Channel Analog Data Selector Features General Description 3.0V to 15V ■ Wide supply voltage range

transistors, thyristors 712

Abstract: CA3240
Contextual Info: HARRIS SEMICOND SECTOR ì H a r r • 43G2271 00ML340 Ô73 H H A S i s C SEMICONDUCTOR A J f U 3 2 mm 4 M Dual BiMOS Operational Amplifier with MOSFET Inpu/Bipolar Output 1993 Features Description • Dual Version of CA3140 The CA324QA and CA3240 are dual usrsions of the

2SD1616

Abstract: LC1 DC
Contextual Info: Transistors 2SD1616 USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 60 V Collector-Emitter Voltage VcEO 50 V V ebo 6 lc 1 Emitter-Base Voltage

Contextual Info: TLHK4400L www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package FEATURES • AlInGaP technology • Standard Ø 3 mm T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Wide viewing angle

Contextual Info: TLHK4400L www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package FEATURES • AlInGaP technology • Standard Ø 3 mm T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Wide viewing angle

Contextual Info: TLHK4400L www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package FEATURES • AlInGaP technology • Standard Ø 3 mm T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Wide viewing angle

Contextual Info: Power T r a n s is t o r s - - M JE 1 3 0 0 7 HARRIS SEMICOND File N um ber SECTOR 2?E » B 4302271 D OS DMb b 15.90 6 MHAS T -S 5 - ' 3 H igh-Speed Silicon N-P-N

Contextual Info: ISO-9001 CERTIFIED BY DESC H-BRIDGE MOSFET POWER MODULE M .S .K E N N E D Y CO RP. 3004 315 699-9201 8 1 7 0 Thompson Road Cicero, N.Y. 13039 FEATURES: • • • • • Pin Compatible with M P M 3 00 4 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

MG75G2YL1A

Abstract: 1-B215
Contextual Info: MG75G2YL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current: Gain : hf,E=80 Min. (Ic=7 5A)

BSS 250

Abstract: marking BSs sot23 marking BSs sot23 siemens Q62702-S501 Q62702-S503 Q62702-S555 Q62702-S605
Contextual Info: NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain ● Low collector-emitter saturation voltage ● Complementary types: BSS 80, BSS 82 PNP ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BSS 79 B

Contextual Info: PD -9.1137 International lögRectifier IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ms @ 125°C, V qe = 15V • Switching-ioss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: TLHE510., TLHG510., TLHK510. www.vishay.com Vishay Semiconductors High Intensity LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • Untinted non-diffused lens • Choice of three colors • TLH.5100 for cost effective design • Medium viewing angle • Material categorization:

Contextual Info: TLHE510., TLHG510., TLHK510. www.vishay.com Vishay Semiconductors High Intensity LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • Untinted non-diffused lens • Choice of three colors • TLH.5100 for cost effective design • Medium viewing angle • Material categorization:

M38257E8FP

Abstract: 100D0
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M38257E8FP

Abstract: M38258MCDXXXFP 32638 m38254
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M38257E8FP

Abstract: display 2 digits
Contextual Info: MITSUBISHI MICROCOMPUTERS 3825 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 3825 group is the 8-bit microcomputer based on the 740 family core technology. The 3825 group has the LCD drive control circuit, an 8-channel AD converter, and a Serial I/O as additional functions.