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    TRANSISTORS 5A1 8 Search Results

    TRANSISTORS 5A1 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 5A1 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807-16LT1 BC807-25LT1 BC807-40LT1 TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) A -50 V 0. 95 0. 4 -0.5 0. 95 2. 4 1. 3 1. 9 Collector current


    Original     		PDF OT-23 BC807-16LT1 BC807-25LT1 BC807-40LT1 OT-23 -100mA -500mA, -50mA BC807-16LT1 BC807-25LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 2. EMITTER １．０ 3. COLLECTOR W（Tamb=25℃） ２．４ １．３ V ０．９５ A ０．４ １．９ FEATURES Power dissipation PCM : 0.3 Collector current


    Original     		PDF OT-23 BC807-16LT1 BC807-25LT1 BC807-40LT1 BC807-25LT1 BC807-40LT1 037TPY 950TPY 550REF

    Untitled

    Abstract: No abstract text available
    Text: BC807-16 BC807-25 BC807-40 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A Collector-base Voltage 50V


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    marking 5a1 sot23

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40 marking 5a1 sot23

    Untitled

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    BC807-40/5C

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202, BC807-40/5C

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101

    LBC80725LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101 3000/Tape LBC80725LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 AEC-Q101 S-LBC807-16LT1G LBC807-16LT3G S-LBC807-16LT3G

    BC807-40

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    BC807-40

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Silicon General Purpose Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    Transistors 5A1 8

    Abstract: SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C
    Text: BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BC807-16L, SBC80716L BC807-25L, SBC80725L, BC807-40L, SBC807-40L AEC-Q101 OT-23 BC807-16LT1/D Transistors 5A1 8 SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C

    Untitled

    Abstract: No abstract text available
    Text: BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BC807-16L, SBC807 BC807-25L, BC807-40L, SBC807-40L BC807â 16LT1/D

    BC807-40LT1G

    Abstract: BC807 BC807-16LT1G BC807-25LT1G
    Text: BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G BC807 BC807-16LT1G BC807-25LT1G

    marking 5b1

    Abstract: On semiconductor date Code sot-23 BC807 BC80740LT1G 5B1 SOT-23 BC807-1 sot-23 Marking B1
    Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D marking 5b1 On semiconductor date Code sot-23 BC807 BC80740LT1G 5B1 SOT-23 BC807-1 sot-23 Marking B1

    marking code 5b1

    Abstract: 5B1 SOT-23 BC807 5c sot-23 sot-23 Marking B1 marking b1 sot-23
    Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D marking code 5b1 5B1 SOT-23 BC807 5c sot-23 sot-23 Marking B1 marking b1 sot-23

    BC807-40LT1G equivalent

    Abstract: bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23
    Text: BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G equivalent bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor M M PQ3725 NPN Silicon JV I a si M otorola Preferred Device JV I 5a1 i II ir v z i 5 Q E H iv= a 3 1 CASE 751B -05, STYLE 4 S O -16 MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-E m itter Voltage


    OCR Scan     		PDF PQ3725

    Untitled

    Abstract: No abstract text available
    Text: : S v î^ S e m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR BC807 -16LT1 BC807 -25LT1 BC8 0 7 -40LT1 TRANSISTOR SOT — 23 1. BASE 2. EMI H E R 3. COLLECTOR FEATURES Power dissipation 0.3 Pcm Collector current 1 cm : PNP W -0 .5 (Tamb=25 °C)


    OCR Scan     		PDF BC807 -16LT1 -25LT1 -40LT1 -10mA OT-23 950TPY 037TPY 550REF