TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors To – 92 ZTX450 TRANSISTOR NPN 1.EMITTER FEATURES z z Low Breakdown Voltage General Purpose Amplifier Transistor 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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ZTX450
150mA
150mA,
100MHz
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2N3055 TO220
Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
Text: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100
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BC107
BC108
2N3904
ZTX300
2N3053
BFY51
TIP31A
2N3055
BC178
BC559
2N3055 TO220
NPN Transistor 2N3055 darlington
100 amp npn darlington power transistors
transistor BC107 specifications
tip122 tip127 audio amp
NPN Transistor TO92
10 amp npn darlington power transistors
transistor 2n3053
DATASHEET Transistor BC107
2N3055 NPN Transistor
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ZTX705
Abstract: Zetex T 705 FCX705 FCX705TA ZTX704 marking 705
Text: FCX705 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low
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FCX705
OT223
Vari31)
ZTX705
Zetex T 705
FCX705
FCX705TA
ZTX704
marking 705
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ztx605
Abstract: FCX605 FCX605TA SOT223
Text: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low
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FCX605
OT223
ztx605
FCX605
FCX605TA
SOT223
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Untitled
Abstract: No abstract text available
Text: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low
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FCX605
OT223
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FCX555
Abstract: FCX555TA 100MHZ TS-4020
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
FCX555TA
100MHZ
TS-4020
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Untitled
Abstract: No abstract text available
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
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Untitled
Abstract: No abstract text available
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
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ZTX415
Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
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ZTX415
200mA
620pF
100mA
20MHz
100MHz
ZTX415
transistor 200V 100MA NPN
AVALANCHE TRANSISTOR
DSA003766
3171 i.c
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transistor JSW
Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26
Text: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power
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ZTX449
ZTX449
100mA
100ms
transistor JSW
transistor JSW 12
high power amp 100mhz 1w
ferranti
JSW 70
transistor HFE 400 1w
Scans-00107847
jsw transistor
SE26
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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ZTX449
Abstract: No abstract text available
Text: NPN Silicon Planar Medium Power Transistor ZTX449 DESCRIPTION The Z T X 4 4 9 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power dissipation, 1W at 2 5 ° C ambient temperature,
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ZTX449
ZTX449
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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ZTX1055A
Abstract: ZTX1Q55A transistor 3345
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 2 - JANUARY 1995. . ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL Collector-Base Voltage ZTX1055A UNIT
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ZTX1055A
Tamy-25Â
ZTX1Q55A
100fiA
lc-100nA
150mA*
lc-10mA,
lc-50mA,
ZTX1Q55A
transistor 3345
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transistor 3345
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 2 - JANUARY 1995_ _ Full characterised data now available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX1055A UNIT Collector-Base Voltage
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ZTX1055A
ZTX1055A
150mA*
10mAr
100MHz
transistor 3345
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 - APRIL 94_ *— - FEATURES * * 400 Volt VCE0 0.5 Amp continuous current * Ptot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZTX758
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 - MARCH 94_ FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation E-Line T092 Compatible - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage
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ZTX214C
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio
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ZTX1051A
R100MHz
lB-40mA,
100mA
0D11D3D
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX795A ISSUE 1 - APRIL 94_ _ _ FEATURES * 140 Volt VCE0 * Gain of 250 at lc=0.2 Amps * Very low saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZTX795A
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX788B ISSUE 2 - APRIL FEATURES * 15 Volt VCE0 * Gain of 300 at lc=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors
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ZTX788B
cH7Q57Ã
001G35S
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ZTX384C
Abstract: ztx384 ZTX38
Text: NPN SILICON PLANAR LOW NOISE TRANSISTOR ZTX384C ISSUE 2 - MARCH 94_ FEATURES * 30 Volt VCE0 * High Gain * Low Noise APPLICATIONS * Audio circuits E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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ZTX384C
100MHz
200uA,
15KHz
200nA,
ZTX384C
ztx384
ZTX38
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TRANSISTOR C 3205
Abstract: 3205 transistor TRANSISTOR BR C 3205 TRANSISTOR 3205
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 ISSUE 1 - APRIL 94_ — - - FEATU RES * 200 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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ZTX576
-100hA
-160V
-10mA*
-100mA,
100MHz
TRANSISTOR C 3205
3205 transistor
TRANSISTOR BR C 3205
TRANSISTOR 3205
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