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    TRANSISTOR ZR Search Results

    TRANSISTOR ZR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ZR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd ZR

    Abstract: SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr 2PC4617JR TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE SP 2108 npn transistor 2PC4617J 2PC4617JS
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING


    Original     		PDF M3D425 2PC4617J SCA63 115002/00/02/pp8 transistor smd ZR SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr 2PC4617JR TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE SP 2108 npn transistor 2PC4617J 2PC4617JS

    bf 194 pin configuration

    Abstract: BA12004B BA12001 BA12001B BA12003B BA12003BF Seven Transistor Array PNP cmos open collector array 7ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor


    Original     		PDF BA12001B BA12003B BA12003BF BA12004B BA12001B, BA12003B, bf 194 pin configuration BA12004B BA12001 Seven Transistor Array PNP cmos open collector array 7ch pnp DARLINGTON TRANSISTOR ARRAY

    2PD601A

    Abstract: 2PB709A 2PD601AQ 2PD601AR 2PD601AS BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES PINNING


    Original     		PDF M3D114 2PD601A SC-59 2PB709A. 2PD601AQ 2PD601AS MAM321 2PD601AR SCA63 2PD601A 2PB709A 2PD601AQ 2PD601AR 2PD601AS BP317

    23 sot346

    Abstract: SC59 philips transistor number code book FREE 2PD601A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor Product specification Supersedes data of 1999 Apr 23 2001 Nov 19 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES PINNING


    Original     		PDF M3D114 2PD601A SC-59 OT346) 2PB709A. 2PD601AQ 2PD60mail SCA73 613514/05/pp8 23 sot346 SC59 philips transistor number code book FREE 2PD601A

    TRANSISTOR C 460

    Abstract: 2SB709A 2SC2404 XN4683
    Text: Composite Transistors XN4683 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol


    Original     		PDF XN4683 TRANSISTOR C 460 2SB709A 2SC2404 XN4683

    bipolar transistor ghz s-parameter

    Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
    Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in


    Original     		PDF HBFP-0450 HBFP-0450 OT-343 SC-70) 031-inch 59257503E-13 292E-1 bipolar transistor ghz s-parameter 1565E LL2012-F 5e19 bipolar transistor s-parameter COND10

    2SB0709A

    Abstract: 2SB709A 2SC2404 XN04683 XN4683
    Text: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C)


    Original     		PDF XN04683 XN4683) 2SB0709A 2SB709A 2SC2404 XN04683 XN4683

    2108 npn transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 2PC4617 NPN general purpose transistor Product specification Supersedes data of 1998 Jul 21 1999 May 21 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF M3D173 2PC4617 SC-75 2PA1774. MAM348 115002/00/03/pp8 2108 npn transistor

    transistor smd ZR

    Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23


    Original     		PDF M3D425 2PC4617J SCA73 613514/03/pp8 transistor smd ZR MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08

    transistor power 5w

    Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
    Text: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System


    Original     		PDF PH2323-5 transistor power 5w Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170

    MSD1819A-RT1

    Abstract: MSD1819A-RT1G
    Text: MSD1819A- RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface


    Original     		PDF MSD1819A- SC-70/SOT-323 MSD1819A-RT1/D MSD1819A-RT1 MSD1819A-RT1G

    marking code MS SOT323

    Abstract: No abstract text available
    Text: MSD1819A−RT1 Preferred Device General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface


    Original     		PDF MSD1819A-RT1 SC-70/SOT-323 MSD1819A-RT1/D marking code MS SOT323

    transistor sc 308

    Abstract: MSD1819A-RT1 SMD310
    Text: MSD1819A-RT1 Preferred Device General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface


    Original     		PDF MSD1819A-RT1 SC-70/SOT-323 7-inch/3000 r14525 MSD1819A transistor sc 308 MSD1819A-RT1 SMD310

    2SB0709A

    Abstract: 2SB709A 2SC2404 XP04683 XP4683
    Text: Composite Transistors XP04683 XP4683 NPN epitaxial planer transistor (Tr1) PNP epitaxial planer transistor (Tr2) 0.2±0.05 ● 0.12+0.05 –0.02 4 5° 0.2±0.1 1.25±0.10 2.1±0.1 • Features ● 5 6 Unit: mm (0.425) For high-frequency amplification (Tr1)


    Original     		PDF XP04683 XP4683) 2SC2404 2SB0709A 2SB709A) 2SB709A 2SC2404 XP04683 XP4683

    MSD1819A-RT1

    Abstract: No abstract text available
    Text: MSD1819A-RT1 Preferred Device General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface


    Original     		PDF MSD1819A-RT1 SC-70/SOT-323 MSD1819A-RT1/D MSD1819A-RT1

    smd transistor marking n3

    Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55
    Text: DISCRETE SEMICONDUCTORS 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J


    OCR Scan     		PDF 2PC4617J 2PC4617J SC-89 OT490) SCA63 5002/00/02/pp8 smd transistor marking n3 MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55

    2SC738

    Abstract: 2SC7 FT440
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor


    OCR Scan     		PDF 2SC738 2SC738 100MHz, 440MHztyp SC-43 100MHz 2SC7 FT440

    Zr 1100

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK444-2O0A/B BUK444 -200A -200B PINNING-SOT186 Zr 1100

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon General Purpose Amplifier Transistor MSD1819A-RT1 Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package


    OCR Scan     		PDF MSD1819A-RT1 SC-70/SOT-323 7-inch/3000

    2SB1301

    Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SB1301 2SB1301 2SD1952 MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134

    cd 1191 cb

    Abstract: CD 1691 CB
    Text: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per­


    OCR Scan     		PDF BFP67/BFP67R/BFP67W BFP67 BFP67R BFP67W 20-Jan-99 cd 1191 cb CD 1691 CB

    transistor marking WV2

    Abstract: No abstract text available
    Text: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    OCR Scan     		PDF FQ67/B FQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99 transistor marking WV2

    sot323 transistor marking MOTOROLA

    Abstract: SD1819A-RT1 Motorola -transistors zr transistor MOTOROLA TRANSISTOR 323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon General Purpose Am plifier Transistor M SD1819A-RT1 Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package


    OCR Scan     		PDF SC-70/SOT-323 7-inch/3000 SD1819A-RT1 MSD1819A-RT1 sot323 transistor marking MOTOROLA SD1819A-RT1 Motorola -transistors zr transistor MOTOROLA TRANSISTOR 323

    2SB1217

    Abstract: PT 2102 ic 2SD1818
    Text: PNP SILICON POWER TRANSISTOR 2SB1217 DESCRIPTION The 2SB1217 is a Low VcE sat transistor which has a large current capability and wide SOA. PACKAGE DIMENSIONS in millimeters (inches) It is suitable for DC-DC converter, or driver of solenoid or motor. FEATURES


    OCR Scan     		PDF 2SB1217 2SB1217 2SD1818 PT 2102 ic