TRANSISTOR ZO 103 Search Results

TRANSISTOR ZO 103 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR ZO 103 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
6943-3 Abstract: No abstract text available Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications	Original	PDF	OT343 CFH800 Rn/50 6943-3
transistor Zo 105 Abstract: 6943-3 55086 HEMT marking P 05973 Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz	Original	PDF	OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C	Original	PDF	B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor
BFT25A Abstract: MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25A NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 December 1997 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFT25A PINNING • Low current consumption	Original	PDF	BFT25A BFT25A MSB003 MSB003
MRC036 Abstract: MRC053 MRC038 MRC031 MRC035 MRC034 BFS25A MRC075 MRC033 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 December 1997 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption	Original	PDF	BFS25A OT323 OT323 MBC870 OT323. MRC036 MRC053 MRC038 MRC031 MRC035 MRC034 BFS25A MRC075 MRC033
power amplifier circuit diagram with pcb layout Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db Text: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are	Original	PDF	BFG480W BFG480W, BFG400 MGS765 MGS766 power amplifier circuit diagram with pcb layout PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
marking code 10 sot23 Abstract: BFR92A BFR92AW BFR92A application note Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92AW NPN 5 GHz wideband transistor Product specification Supersedes data of October 1992 File under discrete semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW	Original	PDF	BFR92AW OT323 BFR92AW BFR92A. marking code 10 sot23 BFR92A BFR92A application note
BCs 43 TRANSISTOR Abstract: transistor zo 107 AT-32063 4046 IC opt 1027 8 pin ic 3844 for 5 volts Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry	Original	PDF	AT-32063 5989-2645EN AV02-1456EN BCs 43 TRANSISTOR transistor zo 107 AT-32063 4046 IC opt 1027 8 pin ic 3844 for 5 volts
AT-32063 Abstract: AT-32063-BLK AT-32063-TR1 8 pin ic 3844 for 5 volts AT-32063-TR1G marking 624 sc-70 Text: Agilent AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of	Original	PDF	AT-32063 5965-8921E 5989-2645EN AT-32063 AT-32063-BLK AT-32063-TR1 8 pin ic 3844 for 5 volts AT-32063-TR1G marking 624 sc-70
transistor zo 107 Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	PDF	AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
AT-32063 Abstract: No abstract text available Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry	Original	PDF	AT-32063 5989-2645EN AV02-1456EN AT-32063
BCs 43 TRANSISTOR Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design.	Original	PDF	AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-8921E 5989-2645EN BCs 43 TRANSISTOR AT-32063-BLK AT-32063-TR1
8 pin ic 3844 for 5 volts Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107 Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	PDF	AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107
transistor zo 607 Abstract: ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS	Original	PDF	2SC4570 transistor zo 607 ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN

transistor 3506 nec Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter Text: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PDF	2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter
zo 103 ma Abstract: ic 7556 IC 555 2SC4261 513 s12 datasheet ic 804 RF POWER TRANSISTOR NPN RF transistors with s-parameters transistor 1238 transistor RF S-parameters Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION •Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage	Original	PDF	2SC4261 ELECTRI682 zo 103 ma ic 7556 IC 555 2SC4261 513 s12 datasheet ic 804 RF POWER TRANSISTOR NPN RF transistors with s-parameters transistor 1238 transistor RF S-parameters
ZO 607 transistor Abstract: transistor zo 607 zo 607 ZO 607 MA transistor on 4408 zo 607 MA transistor TC2483 transistor ZO 607 MA 2SC5186 2SC5186-T1 Text: DATA SHEET SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PDF	2SC5186 ZO 607 transistor transistor zo 607 zo 607 ZO 607 MA transistor on 4408 zo 607 MA transistor TC2483 transistor ZO 607 MA 2SC5186 2SC5186-T1
transistor zo 107 Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	PDF	OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
transistor zo 107 Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	PDF	OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
BFT25A Abstract: MCD113 MCD110 RF POWER TRANSISTOR NPN Text: BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up	Original	PDF	BFT25A BFT25A MCD113 MCD110 RF POWER TRANSISTOR NPN
transistor on 4409 Abstract: transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA 2SC5180 Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain PACKAGE DIMENSIONS Units : mm S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz	Original	PDF	2SC5180 2SC5180 transistor on 4409 transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA
BFR540 Abstract: MSB003 BFR540 philips Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a	Original	PDF	BFR540 BFR540 MSB003 BFR540 philips
bfr505 Abstract: MSB003 mra723 transistor ZO 103 MA Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR505 PINNING • High power gain	Original	PDF	BFR505 BFR505 MSB003 mra723 transistor ZO 103 MA
yb 0d Abstract: No abstract text available Text: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation	OCR Scan	PDF	1090-400S yb 0d

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TRANSISTOR ZO 103 Search Results

TRANSISTOR ZO 103 Result Highlights (5)

TRANSISTOR ZO 103 Datasheets Context Search

6943-3

transistor Zo 105

TRANSISTOR zo 109 ma

BFT25A

MRC036

power amplifier circuit diagram with pcb layout

marking code 10 sot23

BCs 43 TRANSISTOR

AT-32063

transistor zo 107

AT-32063

BCs 43 TRANSISTOR

8 pin ic 3844 for 5 volts

transistor zo 607

transistor 3506 nec

zo 103 ma

ZO 607 transistor

transistor zo 107

transistor zo 107

BFT25A

transistor on 4409

BFR540

bfr505

yb 0d