TRANSISTOR Z4 30 Search Results

TRANSISTOR Z4 30 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR Z4 30 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor z3 Abstract: TRANSISTOR Z4 Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor z3 TRANSISTOR Z4	PDF
TRANSISTOR Z4 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	MRF392 MRF392 TRANSISTOR Z4	PDF
TRANSISTOR Z4 Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 rt230pd IRF 1470 Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 IRF 1470	PDF
transistor C4 Abstract: No abstract text available Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor C4	PDF
transistor z5 Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716 Text: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	MRF392/D MRF392 MRF392 i1-44-844-8298 transistor z5 erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 redcap 7w120 transistor D 716	PDF
MRF392 Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125 Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	MRF392/D MRF392 MRF392/D* MRF392 TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	MRF392/D MRF392 MRF392/D*	PDF
Z1 Transistor Abstract: MRF392 Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	MRF392/D MRF392 MRF392/D* Z1 Transistor MRF392	PDF
atc100a Abstract: omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5 Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 6/30/05 MAPLST0817-015PP Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz,	Original	MAPLST0817-015PP 960MHz, 26Vdc, 960MHz atc100a omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5	PDF
MRF-393 Abstract: 8w RF POWER TRANSISTOR NPN Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —	Original	MRF393 MRF393 MRF-393 8w RF POWER TRANSISTOR NPN	PDF
TRANSISTOR Z4 Abstract: "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01 Text: Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —	Original	MRF393/D MRF393 TRANSISTOR Z4 "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01	PDF
1000 watts amplifier schematic diagram with part Abstract: MRF844 UNELCO MICA CAPACITORS schematic diagram 800 watt power amplifier AN-578 transistor Common Base configuration uhf motorola glass capacitor MICA Microwave mini electrolytic Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB105/D SEMICONDUCTOR ENGINEERING BULLETIN EB105 A 30 WATT, 800 MHz AMPLIFIER DESIGN Freescale Semiconductor, Inc. Prepared by: Alan Wood Semiconductor Product Sector INTRODUCTION CIRCUIT DESCRIPTION	Original	EB105/D EB105 MRF844 1000 watts amplifier schematic diagram with part UNELCO MICA CAPACITORS schematic diagram 800 watt power amplifier AN-578 transistor Common Base configuration uhf motorola glass capacitor MICA Microwave mini electrolytic	PDF
MRF844 Abstract: UNELCO MICA CAPACITORS 1000 watts amplifier schematic diagram with part AN-578 microwave laminate board Application motorola NIPPON CAPACITORS EB105 Copper clad laminate an578 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by EB105/D SEMICONDUCTOR ENGINEERING BULLETIN ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 EB105 A 30 WATT, 800 MHz AMPLIFIER DESIGN ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.	Original	EB105/D EB105 MRF844 UNELCO MICA CAPACITORS 1000 watts amplifier schematic diagram with part AN-578 microwave laminate board Application motorola NIPPON CAPACITORS EB105 Copper clad laminate an578	PDF
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557	PDF

8w RF POWER TRANSISTOR NPN Abstract: MRF393 Text: MOTOROLA Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —	Original	MRF393/D MRF393 MRF393/D* 8w RF POWER TRANSISTOR NPN MRF393	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.	Original	MRF393/D MRF393 MRF393/D*	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF
transistor C456 Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486 Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and	Original	AT-41511 5964-3853E transistor C456 microstripline FR4 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486	PDF
2907A PNP bipolar transistors Abstract: microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1 Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular	Original	AT-41511 5964-3853E 2907A PNP bipolar transistors microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1	PDF
AGR18030EF Abstract: JESD22-C101A Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A	PDF
AT-41511 Abstract: 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411 Text: hH Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular	Original	AT-41511 5964-3853E AT-41511 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411	PDF
Untitled Abstract: No abstract text available Text: MC10192 Quad Bus Driver The MC10192 contains four line drivers with complementary outputs. Each driver has a Data D input and shares an Enable (E) input with another driver. The two driver outputs are the uncommitted collectors of a pair of NPN transistors operating as a current switch.	Original	MC10192	PDF
diode zener c25 Abstract: diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32 Text: AN15 D E S I G N C O N S I D E R A T I O N S F O R T H E S I 303 4/38/4 4 Introduction The Si3034/38/44 direct access arrangement DAA provides worldwide compliance for modems and other communications equipment that is connected to analog telephone networks. Many different standards exist to	Original	Si3034/38/44 Si3034/ IEC1000-4 diode zener c25 diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32	PDF
Untitled Abstract: No abstract text available Text: fZ 7 S G S -T H O M S O N ^ 7 #. K M SD1540 « « ® « ! RF & M ICROW AVE TR AN SISTO RS AVIONICS APP LIC ATIO N S • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 350 WATTS typ. IFF 1030 - 1090 MHz . 300 WATTS (min.) DME 1025 - 1150 MHz	OCR Scan	SD1540 SD1540	PDF

TRANSISTOR Z4 30 Search Results

TRANSISTOR Z4 30 Result Highlights (5)

TRANSISTOR Z4 30 Datasheets Context Search

transistor z3

TRANSISTOR Z4

TRANSISTOR Z4

transistor C4

transistor z5

MRF392

Untitled

Z1 Transistor

atc100a

MRF-393

TRANSISTOR Z4

1000 watts amplifier schematic diagram with part

MRF844

"RF Power Transistor"

8w RF POWER TRANSISTOR NPN

Untitled

transistor equivalent table 557

transistor C456

2907A PNP bipolar transistors

AGR18030EF

AT-41511

Untitled

diode zener c25

Untitled