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    TRANSISTOR Y6H Search Results

    TRANSISTOR Y6H Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Y6H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5637A IRG4IBC30SPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95788A IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 5788A IRG4BC40WSPbF IRG4BC40WLPbF EIA-418.

    3000 0442

    Abstract: No abstract text available
    Text: PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 95788B IRG4BC40WSPbF IRG4BC40WLPbF EIA-418. 3000 0442

    transistor 58w

    Abstract: No abstract text available
    Text: PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5637A IRG4IBC30SPbF O-220 transistor 58w

    Untitled

    Abstract: No abstract text available
    Text: PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 95788B IRG4BC40WSPbF IRG4BC40WLPbF EIA-418.

    IRG4BC40W-SPBF

    Abstract: IRG4BC40WL IRG4BC40WS
    Text: PD - 95788A IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 5788A IRG4BC40WSPbF IRG4BC40WLPbF EIA-418. IRG4BC40W-SPBF IRG4BC40WL IRG4BC40WS

    Untitled

    Abstract: No abstract text available
    Text: PD - 95170A IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5170A IRG4BC30SPbF O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95170A IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5170A IRG4BC30SPbF O-220AB O-220AB 4BC30SPbF

    Irg4bc40spbf

    Abstract: No abstract text available
    Text: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5175A IRG4BC40SPbF O-220AB O-220AB 4BC40SPbF Irg4bc40spbf

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5639A IRG4BC20SPbF O-220AB O-220AB I4BC20SPbF

    irf 100v 200A

    Abstract: irf 345 irg4pc50sdpbf C-150
    Text: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,


    Original     		PDF IRG4PC50SDPbF O-247AC irf 100v 200A irf 345 irg4pc50sdpbf C-150

    Untitled

    Abstract: No abstract text available
    Text: PD -95525A IRG4PH50SPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -95525A IRG4PH50SPbF O-247AC O-247AC

    diode marking 33A

    Abstract: diode marking 33a on semiconductor marking 33a on semiconductor IRG4PH50S
    Text: PD -91712B IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -91712B IRG4PH50S O-247AC O-247AC diode marking 33A diode marking 33a on semiconductor marking 33a on semiconductor IRG4PH50S

    IGBT 200V 50A

    Abstract: No abstract text available
    Text: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,


    Original     		PDF IRG4PC50SDPbF O-247AC IGBT 200V 50A

    IRG4PH50S

    Abstract: diode marking 33a on semiconductor marking 33a on semiconductor
    Text: PD -95525A IRG4PH50SPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -95525A IRG4PH50SPbF O-247AC O-247AC IRG4PH50S diode marking 33a on semiconductor marking 33a on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5175A IRG4BC40SPbF O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5639A IRG4BC20SPbF O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD -91712B IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -91712B IRG4PH50S O-247AC O-247AC

    IRF 042

    Abstract: IRG4BC20UDPBF
    Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 4909A IRG4BC20UDPbF O-220AB IRF 042 IRG4BC20UDPBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 4911A IRG4PC40FDPbF O-247AC

    AN-994

    Abstract: C-150 IRGS15B60K
    Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 5194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF O-220AB AN-994. O-220 AN-994 C-150 IRGS15B60K

    AN-994

    Abstract: C-150 HF03D060ACE
    Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994. AN-994 C-150 HF03D060ACE

    Untitled

    Abstract: No abstract text available
    Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF 4909A IRG4BC20UDPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 5194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF O-220AB O-262 AN-994.