TRANSISTOR Y6H Search Results

Contextual Info: PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95788A IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

3000 0442

Contextual Info: PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

transistor 58w

Contextual Info: PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4BC40W-SPBF

Abstract: IRG4BC40WL IRG4BC40WS
Contextual Info: PD - 95788A IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 95170A IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95170A IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Irg4bc40spbf

Contextual Info: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

irf 100v 200A

Abstract: irf 345 irg4pc50sdpbf C-150
Contextual Info: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,

Contextual Info: PD -95525A IRG4PH50SPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

diode marking 33A

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor IRG4PH50S
Contextual Info: PD -91712B IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IGBT 200V 50A

Contextual Info: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,

IRG4PH50S

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor
Contextual Info: PD -95525A IRG4PH50SPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD -91712B IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRF 042

Abstract: IRG4BC20UDPBF
Contextual Info: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

AN-994

Abstract: C-150 IRGS15B60K
Contextual Info: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

AN-994

Abstract: C-150 HF03D060ACE
Contextual Info: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

Contextual Info: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.