TRANSISTOR XM Search Results

bd179

Contextual Info: / = 7 SCS-THOMSON moos Li gTFi M(gS BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE • NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package,

transistor application

Abstract: transistor XMFP1-M3 power transistor 23 transistor marking transistor mesfet low noise transistor "Power transistor" mesfet low noise DECT 6.0
Contextual Info: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor 1.5 0.4 0.65 (2) (3) B 2.9 1.9 A (4) 0.8 0.3 (1) XMFS2-M1 Pin (1):Source (2):Gate (3):Source (4):Drain Marking A : Part No. B : Lot No. in mm Type Application Gain

BUK617-500AE

Abstract: SVM91 TRANSISTOR C 557 B W 21
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

transistor XM

Abstract: transistor power transistor k 30 transistor TRANSISTOR P 3 transistor mesfet transistor l 2 xmfp1-m3
Contextual Info: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor r •■ i m cd (3l (2 ) '~'B - (4) m -m l XMFS2-M1 Pm M arking (1) So urce 12V. G a te (3): Source (4) : Dram A : Part No. B . Lo i No. in mm Gain (dB) Minimum Noise Figure

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

xk30

Contextual Info: SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS in m illim eters

Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

RN1910FE

Abstract: RN1911FE RN2910FE RN2911FE
Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1910FE, RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE, RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

RN1910FE

Abstract: RN1911FE RN2910FE RN2911FE
Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

RN1910FE

Abstract: RN1911FE RN2910FE RN2911FE
Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

Toshiba xm

Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

Contextual Info: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)

NSBC123TPDP6T5G

Abstract: NSBC144EPDP6T5G NSBC114EPDP6T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC124EPDP6T5G NSBC143EPDP6T5G 306 marking code transistor NSBC144WPDP6
Contextual Info: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

NSBC144WPDP6

Contextual Info: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base

RN1710JE

Abstract: RN1711JE RN2710JE
Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)

Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)

BU2508A

Abstract: BY228 BU2508
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to

Toshiba xm

Contextual Info: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: m 2N5943 \ \ NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 S V M DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. DIMENSIONS ! MIN. MAX. MIN. MAX. 4>a 0.190 0.210 4.83 533 6.60 INCHES MILLIMETERS

RN1710JE

Abstract: RN1711JE RN2710JE RN2711JE
Contextual Info: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)

Contextual Info: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin