TRANSISTOR WR2 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage:* VCEO=400V * Collector Current up to 300mA „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA44HL-AB3-R MPSA44HG-AB3-R

BFR93AW

Abstract: B 1359 marking A3 amplifier 449
Contextual Info: BFR93AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 13 652 2 13 570 3 Marking: WR2

A1489 TRANSISTOR

Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

ZS 633

Abstract: BFR93A application board MARKING WR2 SOT-23 B 1359 BFR93A BFR93AR BFR93AW
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

BFR93A

Abstract: BFR93A application board ZS 1052 AC BFR93AR BFR93AW transistor BFR93A MARKING WR2 SOT-23
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

BFR93AW

Abstract: BFR93A application board transistor BFR93A ZS 1052 AC BFR93A BFR93AR BFR93A VISHAY ZS 633
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure

transistor wr2

Contextual Info: <^£.mL-dondu.ctoi ^Pi ., {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PMD16K100 Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage-

sot-23 MARKING 636

Abstract: ZS 1052 AC ZS 633 BFR93a
Contextual Info: BFR93A / BFR93AR / BFR93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • High transition frequency • Low noise figure 2 3 1 SOT-23 Applications Wide band amplifier up to GHz range. 3 Mechanical Data

BFR93A

Contextual Info: BFR93A / BFR93AR / BFR93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • High transition frequency • Low noise figure 2 3 1 SOT-23 Applications Wide band amplifier up to GHz range. 3 Mechanical Data

transistor wr2

Contextual Info: TOSHIBA RN4606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi fl f i Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 .8 + 0.2 - 0.3 + 0.2 1 . 6 - 0.1

MARKING CODE 618 SOT23

Abstract: MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23
Contextual Info: Not for new design, this product will be obsoleted soon BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component

BFR93AW-GS08

Abstract: 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

TRANSISTOR mcr 100-8

Abstract: AFC8503S
Contextual Info: Programmable Controller FP-X0 Conforming to Low Voltage and EMC Directive New Multi-functional & Economical PLC Body equipped with combined relay and transistor output L30R Super-high processing speed 80 ns/step 0 to 3000 steps for ST command Number of I/O points

MARKING WR2 SOT-23

Abstract: ZS 633
Contextual Info: BFR93A / BFR93AR / BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: TOSHIBA RN4905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R U I Q O R SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 2 . 1± 0.1 1.25 ± 0.1 Including Two Devices in US6 (U ltra Super Mini Type with 6

mica capacitor

Abstract: Silver mica capacitor 2SK1739 variable resistor 10w mica capacitors ci 7403 transistor wr2 mica variable capacitor C28T
Contextual Info: TOSHIBA 2SK1739 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 739 RF PO W ER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Po^90W M in. Efficiency 7 d ~ 50% (Typ.) Frequency f = 770MHz Push-P ull Structure Package M A X IM U M RATINGS (Tc = 25°C)

Contextual Info: UTC 2SA1507 PNP EPITAXIAL SILICON TR AN SISTO R S SWITCHING TRANSISTOR APPLICAITONS ‘ C o lo r T V a u d io o u tp u t, c o n v e rte rs , in v e rte rs . FEATURES ‘ H igh b re a k d o w n v o lta g e ‘ L a rg e c u rre n t c a p a c ita n c e . ‘ H ig h -s p e e d s w itc h in g

WS1111

Abstract: J-STD-020A J-STD-033
Contextual Info: !" PRELIMINARY DATASHEET WS1111 Power Amplifier Module for CDMA/AMPS 824-849MHz PRELIMINARY DATASHEET (DEVICE : WS1111, 4x4 CDMA/AMPS PAM) Issued Date : Dec. 22, 2003 S. W. Paek Senior MTS, Module Group 1 Preliminary Information WR20310-001 !" PRODUCT DESCRIPTION

Contextual Info: +5 V Fixed, Adjustable Micropower Linear Voltage Regulators ANALOG DEVICES ADM663/ADM666 FEATURES 5 V Fixed or +1.3 V to +16 V Adjustable Low Power CMOS: 12 pA max Quiescent Current 40 mA Output Current Current Limiting Pin Compatible with MAX663/666 +2 V to +16.5 V Operating Range

transistor w2a 40

Abstract: xw4f 4500 microcomputer
Contextual Info: MITSUBISHI MICROCOMPUTERS 4551 Group SINGLE-CHIP 4-BIT CMOS M ICROCOMPUTER DESCRIPTION • LCD control circuit Segment Common o u tp u

coreless transformer Technology

Contextual Info: February 2010 Application Note AN-EVAL 2x8-ISO1H811G-1 Coreless Transformer Isolated High Side Switch Evaluation Board 2 x 8 Channel 0.6A with ISO1H811G Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p

Contextual Info: February 2010 Application Note AN-EVAL 2x8-ISO1H815G-1 Coreless Transformer Isolated High Side Switch Evaluation Board 2 x 8 Channel 1.2A with ISO1H815G Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p

OMF125

Abstract: zener WR1 ISO1H811G omf125 1a OMF125 7A C166 Coreless pcb transformer P-DSO-36 ISO1H811
Contextual Info: February 2010 Application Note AN-EVAL 2x8-ISO1H811G-1 Coreless Transformer Isolated High Side Switch Evaluation Board 2 x 8 Channel 0.6A with ISO1H811G Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p

omf125 10A

Abstract: zener WR1 OMF125 fet 500v 14A zener protect C166 ISO1H815G micro processor controlled SCR
Contextual Info: February 2010 Application Note AN-EVAL 2x8-ISO1H815G-1 Coreless Transformer Isolated High Side Switch Evaluation Board 2 x 8 Channel 1.2A with ISO1H815G Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p