TRANSISTOR WB1 Search Results

TH 2190 mosfet

Abstract: AN1955 MRF21180 MRF21180R6
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET

MRF9120

Abstract: MRF9120S
Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120 MRF9120S N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

93F2975

Abstract: transistor WB1
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

us 945 mosfet

Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies

Contextual Info: Document Number: MRF9060N Rev. 13, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MARKING WB1

Abstract: EB212 MRF9085 MRF9085LSR3 MRF9085LS
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9085LSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF377H

Abstract: 470-860 mhz Power amplifier w nippon capacitors 08051J4R7BBS 0805J C182
Contextual Info: Freescale Semiconductor Technical Data RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377HR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance

MARKING WB1

Abstract: ATC100B470JT500XT MRF9135L MRF9135LR3 T491D106K035AT
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9135LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MARKING WB1

Abstract: MRF9135LSR3 ATC100B470JT500XT MRF9135L T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L - 2 Rev. 10, 9/2008 RF Power Field Effect Transistor MRF9135LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF9085

Abstract: MARKING WB1 EB212 MRF9085LR3 c13 cutout
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9085LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF9045N

Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MRF9030N

Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21085-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

ATC100B100JT500XT

Abstract: MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

TH 2190 mosfet

Abstract: CDR33BX104AKWS MRF21180 MRF21180R6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF21085

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21085-2 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

539 MOTOROLA transistor

Abstract: mosfet MTBF MRF5P21180 100-B300 transistor motorola 236 CDR33BX104AKWS
Contextual Info: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device