transistor npn 100w amplifier
Abstract: rf amplifier 100w NTE470 amplifier 100w w amplifier 30mhz
Text: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE470
NTE470
30MHz.
30MHz
150mA,
001MHz
transistor npn 100w amplifier
rf amplifier 100w
amplifier 100w
w amplifier 30mhz
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NTE470
Abstract: transistor npn 100w amplifier transistor npn 100w amplifier TO-3P
Text: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE470
NTE470
30MHz.
30MHz
150mA,
001MHz
transistor npn 100w amplifier
transistor npn 100w amplifier TO-3P
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NTE338F
Abstract: 20W power transistor
Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP
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NTE338F
NTE338F
30MHz.
30MHz
001MHz
30MHz
20W power transistor
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NTE338F
Abstract: No abstract text available
Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP
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NTE338F
NTE338F
30MHz.
30MHz
-30dB
001MHz
30MHz
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Untitled
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4986FS
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Untitled
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4986FS
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RN4986FS
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4986FS
RN4986FS
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Untitled
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C C R1 fS6 R1 R2
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RN4986FS
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RN4986FS
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 fS6 R1 R2 B R2 B E 6 2 5 3 4
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RN4986FS
RN4986FS
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PBHV8540T
Abstract: PBHV9040T MARKING CODE SMD IC npn transistor w5 NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 13 February 2008 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9040T
O-236AB)
PBHV8540T.
AEC-Q101
PBHV9040T
PBHV8540T
MARKING CODE SMD IC
npn transistor w5
NXP TRANSISTOR SMD MARKING CODE SOT23
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PBHV8540T
Abstract: PBHV9040T MARKING CODE SMD IC
Text: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9040T
O-236AB)
PBHV8540T.
AEC-Q101
PBHV9040T
PBHV8540T
MARKING CODE SMD IC
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EN6026
Abstract: SPI-238-18 p 6026 5mm Sanyo led
Text: Ordering number : EN6026 GaAs Infrared LED SPI-238-18 SPI-238-18 Ultraminiature photointerrupter single-transistor type Features • GaAs Infrared LED plus Single Phototransistor • Photo-Interrupter • Contact type • Compact type : H4.95 ✕ L6.0 ✕ W5.5mm
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EN6026
SPI-238-18
EN6026
SPI-238-18
p 6026
5mm Sanyo led
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W50N10
Abstract: STW50N10
Text: STW50N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST W50N10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.035 Ω 50 A TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW50N10
W50N10
100oC
175oC
O-247
W50N10
STW50N10
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SPI-240-15-T1
Abstract: No abstract text available
Text: Ordering number : EN6027 GaAs Infrared LED SPI-240-15-T1 SPI-240-15-T1 Ultraminiature photointerrupter supporting reflow soldering Darlington-transistor type Features • GaAs Infrared LED plus Darlington Phototransistor • Photo-Interrupter for reflow soldering
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EN6027
SPI-240-15-T1
SPI-240-15-T1
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: MP4301 T O SH IB A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4301 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 31.5 ± 0.2
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MP4301
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Z60N
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm
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2SC4240
peg13dB.
220pF,
1000pF,
4700p
Z60N
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE MP4503 SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4503 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm
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MP4503
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Untitled
Abstract: No abstract text available
Text: MP4020 T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4020 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.
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MP4020
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MP6901 TOSHIBA POWER TRANSISTOR M O DU LE SILICON EPITAXIAL TYPE D AR LIN G TO N POWER TRANSISTOR 6 IN 1 MP6901 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O TO R DRIVE A N D INDUCTIVE LO AD
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MP6901
100//S
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NJ28D
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 13 D • 0 S D M 33 Ô G D 037 SR 7 ■ ALGR T-91-01 P R O C E S S NJ28D Process NJ28D Dual N-Channel Junction Field-Effect Transistor P rocess N J28D is a monolithic dual N-channel junction field-effect transistor. It is similar to Process
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T-91-01
NJ28D
NJ35D,
NJ28D
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UMW13N
Abstract: FMW13 T148 T149
Text: h Transistors UM W13 N/FMW 13 î — h 7 > v ^ ^ / D u a l Mini-Mold Transistor x h î $ * V 7 J l ' 7 l s - t B N P N y ‘j 3 > h ÿ > y Z $ Epitaxai Pianar NPN Silicon Transistor ¡S lâ tiH iffl/R F Amplifier • £fîfé\ri*0/D im en sio n $ Unit : mm
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W13N/FMW13
UMW13N
FMW13
UMW13N
SC-70)
SC-59)
UMW13N/FMW13
FMW13
T148
T149
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Untitled
Abstract: No abstract text available
Text: MP4013 T O S H IB A TO SH IB A POW ER TRANSISTOR M O D U LE SILICON NPN E P ITA X IA L TYPE D A R LIN G T O N POW ER TRANSISTOR 4 IN 1 MP401 3 HIGH POWER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O TO R DRIVE A N D INDUCTIVE LO AD INDUSTRIAL APPLICATIONS
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MP4013
MP401
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