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    TRANSISTOR VARIABLE Search Results

    TRANSISTOR VARIABLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VARIABLE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N4001 transistor free

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
    Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


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    BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn PDF

    BC337 rbe

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
    Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


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    BU323AP BU323AP r14525 BU323AP/D BC337 rbe BC337 figure 1N4001 BC337 BU323P diode 1N4001 voltage limitations PDF

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: S11A1 Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


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    5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology PDF

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


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    5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology PDF

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 PDF

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    Abstract: No abstract text available
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D D42DG BUD42D/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D BUD42D BUD42D/D PDF

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG PDF

    D42DG

    Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105 PDF

    transistor ic1A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „


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    5302D 5302D 5302DL 5302DG 5302D-TM3-T 5302DL-TM3-T 5302DG-TM3-T O-251 QW-R213-018. transistor ic1A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


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    5302D 5302D OT-223 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K O-126 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K PDF

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3441 3 AMPERES NPN SILICON POWER TRANSISTOR NPN SILICON POWER TRANSISTOR . . . 2N3441 transistor is designed for use in general-purpose switching


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    2N3441 2N3441 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


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    5302D 5302D 5302DL-AA3-R 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR „ DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. „ 1 TO-251 FEATURES * Makes efficient anti-saturation operation


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    O-251 5302L-TM3-T 5302G-TM3-T QW-R213-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


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    5302D O-251 5302D O-252 O-126 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K PDF

    5302D

    Abstract: 5302D-TM3-T 5302DL
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


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    5302D O-251 5302D O-126 5302DL 5302DG 5302D-T60-T 5302D-TM3-T 5302DL-TM3-T 5302DL-T60-T 5302D-TM3-T 5302DL PDF

    MTP8P10

    Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


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    BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10 PDF

    high power FET transistor s-parameters

    Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


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    ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET PDF

    5302D

    Abstract: 5302DL
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


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    5302D O-251 5302D O-126 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K 5302DL PDF

    npn transistor 400 volts.10 amperes

    Abstract: No abstract text available
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


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    BUD43D2 BUD43D2: r14525 BUD43D2/D npn transistor 400 volts.10 amperes PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. „ FEATURES * Internal free-wheeling diode


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    5302D 5302D 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K 5302DL-T92-R 5302DG-T92-R PDF

    2SC1425

    Abstract: 2SC1041 F14C 2SC1118 transistor oscillator circuit Transistor Class AB Audio Power Amplifier Application Note 2Sd288 2SD28 transistor oscillator microwave semiconductor corporation rf power transistor
    Text: USER’S MANUAL NEC DEGRADATION OF I if e OF TRANSISTOR OSCILLATOR AND COUNTERMEASURES As microwave transistors have made progress in recent years, many L-C band transistor oscillators have been used. Transistor oscillators have a wide variable frequency range, low residual FM noise, and simple power circuit


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    motorola transistor ignition

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR


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    BU323AP 340D-01 motorola transistor ignition PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF