D1486
Abstract: 2SC4342
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
|
Original
|
2SC4342
2SC4342
O-126
D1486
|
PDF
|
D1485
Abstract: 2SA1720
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
|
Original
|
2SA1720
2SA1720
O-220
D1485
|
PDF
|
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
|
Original
|
KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
|
PDF
|
D1486
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and
|
Original
|
2SD2162
2SD2162
O-220
O-220)
D1486
|
PDF
|
2SA1843
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
2SA1843
2SA1843
|
PDF
|
UPA509TA
Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor
|
Original
|
PA509TA
SC-74A
UPA509TA
uPA50
MARKING UV
N-Channel Silicon Junction Field Effect Transistor
uPA509
|
PDF
|
2Sc2335
Abstract: transistor 2sc2335 how to check ic ship 2SC2335 equivalent 2sC2335 TRANSISTOR equivalent 2sc2335 transistor
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such
|
Original
|
2SC2335
2SC2335
O-220AB
O-220AB)
transistor 2sc2335
how to check ic ship
2SC2335 equivalent
2sC2335 TRANSISTOR equivalent
2sc2335 transistor
|
PDF
|
rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
|
Original
|
REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
|
PDF
|
MPS-U95
Abstract: PSU45
Text: ^Products., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U95 (SILICON) PNP SILICON DARLINGTON TRANSISTOR PNP SILICON DARLINGTON AMPLIFIER TRANSISTOR . . . designed for amplifier and driver applications.
|
Original
|
MPS-U95
PS-U45
MPS-U95
PSU45
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
BST122
Abstract: No abstract text available
Text: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.
|
OCR Scan
|
BST122
hhS3131
BST122
|
PDF
|
ph-13 transistor
Abstract: BC517
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BC517 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
|
OCR Scan
|
BC517
100mA,
100MHz
ph-13 transistor
BC517
|
PDF
|
2SC2528
Abstract: No abstract text available
Text: _ _ _ ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC2528 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 2 5 2 8 is a silicon N P N general purpose, m edium po w e r transistor fabricated w ith Fujitsu's u nique Ring E m itte r Transistor R E T technology. R E T devices are
|
OCR Scan
|
2SC2528
300ys
2SC2528
|
PDF
|
E67349
Abstract: TLP330
Text: TOSHIBA TLP330 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP330 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse
|
OCR Scan
|
TLP330
TLP330
150mA.
150mA
5000Vrms
UL1577,
E67349
220kH
E67349
|
PDF
|
|
|
BUK455-500B
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
BUK455-500B
T0220AB
BUK455-500B
|
PDF
|
E67349
Abstract: TLP572
Text: TOSHIBA TLP572 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS IRED & PHOTO-TRANSISTOR TLP572 AC / DC - INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo transistor optically coupled to a gallium arsenide infrared emitting
|
OCR Scan
|
TLP572
TLP572
2500Vrms
UL1577,
E67349
11-7A8
100msÂ
E67349
|
PDF
|
TEA-1035
Abstract: TEA 1035 2SK1749 tea1035 aakm IEM209
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1749 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1749 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PACKAGE DIMENSIONS lin millimeters FEATURES
|
OCR Scan
|
2SK1749
2SK1749
IEM209)
TEA-1035
TEA 1035
tea1035
aakm
IEM209
|
PDF
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
|
PDF
|
Response AA0482
Abstract: 49/Response AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
|
OCR Scan
|
DSP56303
Response AA0482
49/Response AA0482
|
PDF
|
TLP570
Abstract: E67349 TLP571 100MA RELAY tlp5701
Text: TOSHIBA TLP570,TLP571 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP570, TLP571 PROGRAMMABLE CONTROLLERS AC / DC - INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP570 and TLP571 consist of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared
|
OCR Scan
|
TLP570
TLP571
TLP570,
TLP571
2500Vrms
UL1577,
E67349
E67349
100MA RELAY
tlp5701
|
PDF
|
E67349
Abstract: TLP531 TLP532
Text: TO SH IBA TLP531JLP532 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP531, TLP532 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a
|
OCR Scan
|
TLP531
TLP532
TLP531,
TLP532
2500Vrms
UL1577,
E67349
E67349
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MP4101 TOSHIBA TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P 4 1 01 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE. INDUCTIVE LOAD SWITCHING. 25.2 ± 0 .2
|
OCR Scan
|
MP4101
|
PDF
|
BT816
Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
|
OCR Scan
|
mm/13"
O-92S)
BT816
TA114E
a768
transistor b722
B861
B718
equivalent transistor TT 3034
C785 transistor
b714 transistor
B728
|
PDF
|
Helipot
Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Text: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used
|
OCR Scan
|
MIL-S-19500/425
JAN2N5431,
JANTX2N5431
pulse-repe0/425
MIL-S-19500,
MIL-S-19500
Helipot
JAN2N5431
MIL-STD-750-Test
capacitor ttc 342
J3 DIODE ST
JANTX2N5431
20.000H
unijunction application note
|
PDF
|
