TRANSISTOR UHF MANUAL Search Results

Contextual Info: MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

MMBTH10M3T5G

Abstract: marking AJ Marking code mps MMBTH10M3
Contextual Info: MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

NEC IC D 553 C

Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.

12w 5d

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES

nec 817

Abstract: TRANSISTOR R46 2SC4095 transistor r47
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

Mitsubishi transistor databook

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB

34993

Abstract: 7746-1 transistor ON Semiconductor marking J50 7746-1 NSF2250WT1 NSF2250WT1G 33167 1011 sot323 67723
Contextual Info: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift

Contextual Info: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift

transistor marking code 3EM SOT-23

Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6

Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6

Contextual Info: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm

MMBT918LT1

Abstract: MMBT918LT1G
Contextual Info: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 3.0

marking Specific Device Code Date Code sot-23 4l

Abstract: transistor 3em
Contextual Info: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

Y22 SOT23

Abstract: MMBFJ309LT1, Application Notes JFET with Yos MMBFJ309 MMBFJ309LT1 MMBFJ309LT1G MMBFJ310 MMBFJ310LT1 MMBFJ310LT1G
Contextual Info: MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS

MMBFJ310LT1G

Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
Contextual Info: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

Contextual Info: MMBT918LT1G VHF/UHF Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage

MMBT918LT1G

Contextual Info: MMBT918LT1G VHF/UHF Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage

Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage

transistor y21 sot-23

Abstract: MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6
Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

MSD2714AT1

Abstract: MSD2714AT1G JB marking transistor Marking code mps
Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage

transistor marking JB

Abstract: MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G
Contextual Info: MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25

Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Contextual Info: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS