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    TRANSISTOR U 554 Search Results

    TRANSISTOR U 554 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR U 554 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR2E27A

    Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
    Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r


    OCR Scan     		PDF 24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28

    S100 NPN Transistor

    Abstract: No abstract text available
    Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .


    OCR Scan     		PDF GGQ4507 E--08 S100 NPN Transistor

    2SC1622A

    Abstract: No abstract text available
    Text: NEC j > IJ Z1 > h- =7 > 9 S ilic o n T ra n s is to r 2SC1622A N P N i k ^ + v ' / ’VUJfc '> U NPN Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier H&m / P A C K A G E ^/FEA TU RES » S'J 7"') DIMENSIONS KICffl t U f t i t t o U n it : mm)


    OCR Scan     		PDF 2SC1622A 2SC1622A

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		PDF /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK

    2SB554

    Abstract: toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R
    Text: 2 / U D > P N P = « f f i i b « . W h 5 ^ y 7 >‘9 SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR 2SB o 554 U n i t i n mm o 0 2 5 .0 MAX . P ow er A m p l i f i e r A p p l i c a t i o n s 3 • u ? milite a : * è i S iB - E - t - t o 0 2 1 .0 MAX Hr : P c = 150W


    OCR Scan     		PDF 2sb554 -10mA, -10V-IBf= 2SB554 S8B554â -20mA toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc.


    OCR Scan     		PDF BSS100 003bl2b 0Q3bl37 D03fcil2fl

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •


    OCR Scan     		PDF PA803T PA803T 2SC4570) uPA803T

    613 GB 123 CT

    Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT


    OCR Scan     		PDF uPA803T /xPA803T 2SC4570) 613 GB 123 CT transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de

    bss100 transistor

    Abstract: BSS100 PINNING-TO-92 JZSS773
    Text: Philips C o m po nents Data sheet status P ro d u c t sp e cific a tio n data of issue N ov em b er 1990 FEATURES BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA • Direct interface to C-M O S, TTL, etc. SYM BOL


    OCR Scan     		PDF BSS100 PINNING-TO-92 JZSS773 003bl57 LL53S31 003bl2fi bss100 transistor BSS100

    NJL5165K

    Abstract: NJL5165KL 1FPM tw10s
    Text: NJL5165KL PHOTO REFLECTOR WITH LENSE • GENERAL DESCRIPTION OUTUNE typ. U nit:m m The NJL5165KL is small photo reflector o f Deep Focal Distance and High Resolution. The NJL5165K.L is composed o f infrared LED, high sensitive Si-photo transistor and high resoliutive lense.


    OCR Scan     		PDF NJL5165KL NJL5165K Ta-25 1FPM tw10s

    carbon resistor

    Abstract: tp3098 TO-117a TP309
    Text: nOTOROLA SC XSTRS/R F M OTOROLA HbE D • b3b?554 Q I MOTb _T~32rQS ■SEMICONDUCTOR M TECH N ICA L DATA TP3098" The RF Line U H F L in e a r P o w e r T ra n s isto r • • • • • • 2 1C = 200 mA UHF LINEAR TRANSISTOR NPN SILICON


    OCR Scan     		PDF TP3098 45004/B) 45004/K) TP309Ã O-117A) carbon resistor TO-117a TP309

    2SC4843

    Abstract: TRANSISTOR nf 841
    Text: TOSHIBA 2SC4843 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4843 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. . N F = l.ld B , |S2 iel2 = 15.5dB f = 1GHz 1. 2 5 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4843 2SC4843 TRANSISTOR nf 841

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 S G S -T H O M S O N Ä T# 5 BUV62A m O T K S FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ F A S T S W IT C H IN G TIM E S LO W S W IT C H IN G LO S S E S LO W BASE C U R R E N T R E Q U IR E M E N T S V E R Y LO W S A T U R A T IO N V O L T A G E A N D


    OCR Scan     		PDF BUV62A

    12N05L

    Abstract: 748U STK12N
    Text: SGS-THOMSON ’[LiCTïMOOS * t7 STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TK 12N 05L S TK12N 06L . . . . . . . V dss R D S o n Id 50 V 60 V 0 .1 5 U 0 .1 5 Q 12 A 12 A AVALANC HE RUG G EDNESS TECHNO LO G Y


    OCR Scan     		PDF STK12N05L STK12N06L TK12N OT-82 OT-194 STK12N05L/STK12N06L 12N05L 748U STK12N

    MMPQ3467

    Abstract: SOIC-16 TN3467A
    Text: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .


    OCR Scan     		PDF TN3467A MMPQ3467 O-226 SOIC-16 S0113D D04DbMfl MMPQ3467 SOIC-16 TN3467A

    2SC696

    Abstract: 2SC708A transistor 2sc696 2SC696A 2SC734 2SC853 2SC708 2SC815 2SC734 Y 2SC32
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SC734 2SC1959 2SC696 2SC708A transistor 2sc696 2SC696A 2SC853 2SC708 2SC815 2SC734 Y 2SC32

    2SD1378

    Abstract: No abstract text available
    Text: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „


    OCR Scan     		PDF 2SD1378 2SB1007. 2SD1378

    2SD480

    Abstract: 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD297 2SD476 3D478 2SD479 2SD480 2SD480 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400

    MTP27N10E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF140 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T h is T M O S P o w e r FET is d e s ig n e d fo r lo w Tf v o lta g e , h ig h s p e e d p o w e r s w itc h in g a p p lic a tio n s s u c h a s s w itc h in g re g u la to rs , c o n v e rte rs , s o le n o id


    OCR Scan     		PDF IRF140 D31H5 MTP27N10E

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKA G E N PN V cE O Ic s u s (m ax ) VOLTS A M PS 2N 1724 80 5 2 0 -9 0 @ 1 5 1@ 2N 1724A 120 5 2N 1725 80 2N 2811 D E V IC E TY PE ^FE@ IC/ V ce ( m in /m a x @ A /V ) ^ C E (sa t) @ If/IB (V @ A /A )


    OCR Scan     		PDF

    BUV 12

    Abstract: buv12
    Text: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.


    OCR Scan     		PDF

    bu548

    Abstract: BU548A BUS48 erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2
    Text: 17-JUN-1999 16:21 FROM TO MAGNATEC 01132794449 P.02/08 M agnatec 2 0 0 - 5 2 . ¿y K \ MAG N i Magna Park. Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Admin telephone: 01455 552505 Fax: 01455 558843 CwrtKarc Ho i'j JiiiS


    OCR Scan     		PDF 17-JUN-1999 BUS48 BUS48A Time-25Â bu548 BU548A erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2