74als power consumption
Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
Text: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low
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ALS74
Abstract: AN-476 DM74 AN476 pnp transistor 1000v SCHOTTKY DIODES CROSS REFERENCE
Text: Fairchild Semiconductor Application Note October 1986 Revised March 2003 Guide to ALS and AS Introduction Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have
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DM74L
DM74LS
DM74S
AN-476
ALS74
DM74
AN476
pnp transistor 1000v
SCHOTTKY DIODES CROSS REFERENCE
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74als power consumption
Abstract: 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family
Text: Fairchild Semiconductor Application Note 476 March 1995 INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54/74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have spawned other logic families such as the DM54/
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DM54/74)
DM54/
DM54/74LS
74als power consumption
74AS
TTL SERIES 74AS
74AS Characteristics
AN-476
Complete for 74LS family
74AS SERIES
pnp transistor 1000v
74AS fan-out
74ls series logic family
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NTE3083
Abstract: 3550VDC
Text: NTE3083 Optoisolator NPN Darlington Transistor Output Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate
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NTE3083
NTE3083
3550VDC,
10sec)
3550VDC
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ULN2803 driver
Abstract: ULN2803 uln2804 equivalent ULN2804A
Text: ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage
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ULN2803
ULN2804
ULN2804
ULN2803 driver
uln2804 equivalent
ULN2804A
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Untitled
Abstract: No abstract text available
Text: ULN2003 YOUDA INTEGRATED CIRCUIT HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY—ULN2003 DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. FEATURES ULN2003 has a 2.7kΩ series base resistor for each darlington pair, allowing operation directly with TTL or
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ULN2003
ULN2003
500mA
ULN200370â
200mA
250mA
300mA
350mA
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2am smd transistor
Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels
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SI-5155S
O-220
Rati03S
SPX-62S
SI-3011S
SPX-G32S
SI-3101S
SPZ-G36
SI-3102S
SSB-14
2am smd transistor
transistor smd 4z
HALL SENSOR A 22L
78Mos
EL 14v 4c
78 MOS
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
smd transistor marking 12W
TRANSISTOR SMD MARKING CODE 1P
TRANSISTOR SMD MARK CODE 7a
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Untitled
Abstract: No abstract text available
Text: DS3669 Quad High Current Peripheral Driver General Description Y Y Y Y Y Y Features Y Y Y Y Y Y Y Y Y Y Y Relay drivers Lamp drivers Solenoid drivers Hammer drivers Y bs ol Y Single saturated transistor outputs Low standby power 10 mW typical High impedance TTL compatible inputs
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DS3669
DS3658
AN-213)
DS3669N
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ULN2003 RELAY DRIVER
Abstract: No abstract text available
Text: ULN2003 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode
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ULN2003
ULN2003
500mA.
DIP-16
ULN2003 RELAY DRIVER
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pnp 8 transistor array ttl
Abstract: NTE2033 sink 8 low darlington array
Text: NTE2033 Integrated Circuit Non–Inverting Transistor Array, Low Input Active Description: The NTE2033 is a non–inverting transistor array, which is comprised of four NPN darlington output stages and PNP input stages. This device is low level input active driver and is suitable for
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NTE2033
NTE2033
pnp 8 transistor array ttl
sink 8 low darlington array
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SOT-90B
Abstract: optocouplers 4n35 OPTOCOUPLER dc 4N35 4n35 optocoupler 4N36 SOT90B isolator IC 4N35 optocoupler 4N37
Text: 4N35 4N36 4N37 T O OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo transistor. They are suitable fo r use w ith TTL integrated circuits. Features • Fast switching speeds • Low saturation voltage
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E90700
0110b
57804/VDE
7Z94427A
S3T31
003Sb3b
SOT-90B
optocouplers 4n35
OPTOCOUPLER dc
4N35
4n35 optocoupler
4N36
SOT90B
isolator IC 4N35
optocoupler
4N37
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7166 cmos
Abstract: ULN2803 ULN2804 IC ULN2803 driver ULN2803 ULN2802 OF ULN2803 ULN2803 driver on uln2803 ULN2804A
Text: MOTOROLA ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage
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ULN2803
ULN2804
7166 cmos
IC ULN2803
driver ULN2803
ULN2802
OF ULN2803
ULN2803 driver
on uln2803
ULN2804A
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Untitled
Abstract: No abstract text available
Text: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.
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bh53131
005CH15
CNX35
CNX36
CNX39
CNX35U,
CNX36U
CNX39U.
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Untitled
Abstract: No abstract text available
Text: 4N35 4N36 4N37 T O ^ OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo transistor. They are suitable fo r use with TTL integrated circuits. Features • • • • • Fast switching speeds Low saturation voltage
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E90700
0110b
S3T31
0035b35
bbS3T31
Q03Sb3b
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62003F
Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F
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40Series,
226Devices)
62003P/PA
2003A
2004A
62003F/FB/
62004F/FB/
16bit
TB62705BF
DIP24
62003F
62004f
62004A
TD62801P
62004AP
A 107 transistor
TD62XXX
62c852
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photo transistor til 78
Abstract: 74S00 74H00 H74A1 transistor cross ref 74H00 TTL TTL 74H00
Text: f G E SOLID STATE 01 DE § 3S7S0fll 001^755 fl | Optoelectronic Specification*. T-V/-S3 Photon Coupled Isolator H74A1 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor TTL Interface T he G E Solid State H74A1 provides logic to logic optical interfacing of TT L gates with
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H74A1
H74A1
74H00
74S00
500VDc)
photo transistor til 78
transistor cross ref
74H00 TTL
TTL 74H00
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Untitled
Abstract: No abstract text available
Text: 4N38 4N38A J V ^ /^ E \ O PTO CO U PLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photo transistor. They are suitable fo r use w ith TTL integrated circuits. Features • High maximum output voltage • Fast switching and low saturation voltage
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4N38A
E90700
0110b
bbS3T31
0Q35b41
0035b42
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ULN2803
Abstract: LN2803A-U IC ULN2803 IC 2804 driver ULN2803 la 7184 ULN2804R ULN2804 LN2803 OF ULN2803
Text: M MOTOROLA. -Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this fam ily of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, C M O S or P M O S /N M O S ) and the h ig h e r c u rre n t/v o lta g e
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ULN2803
ULN2804
ULN2804
ULN2802
ULN2801
LN2803A-U
IC ULN2803
IC 2804
driver ULN2803
la 7184
ULN2804R
LN2803
OF ULN2803
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Untitled
Abstract: No abstract text available
Text: Transistors Digital Transistor Isolated Dual Digital Transistors UMH10N / IMH10A •External dimensions (Units: mm) UMH10N IMH10A 2.o±o.a 2 .9 ± 0 .2 D D 0.7 Ml (3) [jlw [jlts> [pi ra I 0.2±0.1 I I I . (4) B ttl(3)ti](2)til(U I (5) (6) 0 .1 5 ± 0 .0 5
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UMH10N
IMH10A
UMH10N
SC-88
DTC123J
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ic o n d u c to rs-S ig n e llc s F A S T T T L L o g ic S e rie s SECTION 3 Circuit Characteristics INPUT STRUCTURES There are three types of input structures used in FAST circuits: diffusion diode, PNP vertical transistor, and NPN transistor. Each of these
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F3037
F3040
F30244
F30245
F30640
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photo transistor til 78
Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083
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ECG3040
ECG3041
ECG3042
ECG3043
ECG3044
ECG3045
photo transistor til 78
ecg 3041
ECG3047
3094 transistor
ECG3090
ECG3086
ECG3098
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Untitled
Abstract: No abstract text available
Text: XR-2001 /2/3/A KSr EXAR High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION - W The XR-2001 /2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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XR-2001
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
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XR-2011
Abstract: XR2011 XR2013CN XR2013 XR-2012
Text: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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XR-2011/12/13/14
XR-2011/2012/2013/2014
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2011
XR2011
XR2013CN
XR2013
XR-2012
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XR-2203
Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil icon NPN Darlington pairs on a single monolithic sub
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XR-220172/3/4
XR-2201,
XR-2202,
XR-2203,
XR-2204
500mA
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2203
XR-2203CP
XR2203CP
XR2204CP
2203CP
XR-2202
2204cp
XR2203
XR2204
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