TRANSISTOR TTL NPN Search Results

74als power consumption

Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
Contextual Info: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low

ALS74

Abstract: AN-476 DM74 AN476 pnp transistor 1000v SCHOTTKY DIODES CROSS REFERENCE
Contextual Info: Fairchild Semiconductor Application Note October 1986 Revised March 2003 Guide to ALS and AS Introduction Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have

74als power consumption

Abstract: 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family
Contextual Info: Fairchild Semiconductor Application Note 476 March 1995 INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54/74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have spawned other logic families such as the DM54/

NTE3083

Abstract: 3550VDC
Contextual Info: NTE3083 Optoisolator NPN Darlington Transistor Output Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate

SOT-90B

Abstract: optocouplers 4n35 OPTOCOUPLER dc 4N35 4n35 optocoupler 4N36 SOT90B isolator IC 4N35 optocoupler 4N37
Contextual Info: 4N35 4N36 4N37 T O OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • Fast switching speeds • Low saturation voltage

7166 cmos

Abstract: ULN2803 ULN2804 IC ULN2803 driver ULN2803 ULN2802 OF ULN2803 ULN2803 driver on uln2803 ULN2804A
Contextual Info: MOTOROLA ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage

ULN2803 driver

Abstract: ULN2803 uln2804 equivalent ULN2804A
Contextual Info: ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage

Contextual Info: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.

Contextual Info: 4N35 4N36 4N37 T O ^ OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo­ transistor. They are suitable fo r use with TTL integrated circuits. Features • • • • • Fast switching speeds Low saturation voltage

Contextual Info: ULN2003 YOUDA INTEGRATED CIRCUIT HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY—ULN2003 DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. FEATURES ULN2003 has a 2.7kΩ series base resistor for each darlington pair, allowing operation directly with TTL or

ULN2803

Abstract: IC ULN2803 ULN2S03 LN2803 ULN2804 ULN2802 ULN2803 IC- CURRENT DRIVER 7166 cmos uln2804av ULN2804A
Contextual Info: MOTOROLA — — — — O ctal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

photo transistor til 78

Abstract: 74S00 74H00 H74A1 transistor cross ref 74H00 TTL TTL 74H00
Contextual Info: f G E SOLID STATE 01 DE § 3S7S0fll 001^755 fl | Optoelectronic Specification*. T-V/-S3 Photon Coupled Isolator H74A1 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor TTL Interface T he G E Solid State H74A1 provides logic to logic optical interfacing of TT L gates with

Contextual Info: 4N38 4N38A J V ^ /^ E \ O PTO CO U PLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • High maximum output voltage • Fast switching and low saturation voltage

ULN2803

Abstract: LN2803A-U IC ULN2803 IC 2804 driver ULN2803 la 7184 ULN2804R ULN2804 LN2803 OF ULN2803
Contextual Info: M MOTOROLA. -Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this fam ily of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, C M O S or P M O S /N M O S ) and the h ig h e r c u rre n t/v o lta g e

Contextual Info: DS3669 Quad High Current Peripheral Driver General Description Y Y Y Y Y Y Features Y Y Y Y Y Y Y Y Y Y Y Relay drivers Lamp drivers Solenoid drivers Hammer drivers Y bs ol Y Single saturated transistor outputs Low standby power 10 mW typical High impedance TTL compatible inputs

Contextual Info: Transistors Digital Transistor Isolated Dual Digital Transistors UMH10N / IMH10A •External dimensions (Units: mm) UMH10N IMH10A 2.o±o.a 2 .9 ± 0 .2 D D 0.7 Ml (3) [jlw [jlts> [pi ra I 0.2±0.1 I I I . (4) B ttl(3)ti](2)til(U I (5) (6) 0 .1 5 ± 0 .0 5

Contextual Info: P h ilip s S e m ic o n d u c to rs-S ig n e llc s F A S T T T L L o g ic S e rie s SECTION 3 Circuit Characteristics INPUT STRUCTURES There are three types of input structures used in FAST circuits: diffusion diode, PNP vertical transistor, and NPN transistor. Each of these

photo transistor til 78

Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Contextual Info: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083

ULN2003 RELAY DRIVER

Contextual Info: ULN2003 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode

Contextual Info: XR-2001 /2/3/A KSr EXAR High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION - W The XR-2001 /2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

XR-2011

Abstract: XR2011 XR2013CN XR2013 XR-2012
Contextual Info: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

pnp 8 transistor array ttl

Abstract: NTE2033 sink 8 low darlington array
Contextual Info: NTE2033 Integrated Circuit Non–Inverting Transistor Array, Low Input Active Description: The NTE2033 is a non–inverting transistor array, which is comprised of four NPN darlington output stages and PNP input stages. This device is low level input active driver and is suitable for

XR-2203

Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Contextual Info: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­