TRANSISTOR TT FET Search Results

BUK655-500B

Abstract: T0220AB
Contextual Info: P H ILIPS bSE D INTER NAT ION AL ES 7 1 1 0 6 2 b D0bH31b TTö • PHIN Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET G EN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

TEA-1035

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS 2SK2498 is N-Channel MOS Field E ffe c tT ra n sisto r designed fo r in millimeter high c u rre n t sw itch ing applications, FEATURES

PU1501

Abstract: PU4471 PU4135 PU7456 PU4000 PU4118 PU4128 apu4148 PU4444 PU3134
Contextual Info: Transistore Selection Guide by Applications and Functions IPower Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) Equivalent Circuit I I I ^''''\_Structure A p p lic a tio n ^ ^ General Example (N P N ) TT 2 s 5 Low VcE(sat) PUA3000

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2480 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE DIMENSIONS in millimeter fo r high vo lta g e s w itc h in g a p p lica tio n s.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2478 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE DIMENSIONS in millimeter fo r high vo lta g e s w itc h in g a p p lica tio n s.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2477 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high vo lta g e s w itc h in g a p p lica tio n s.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2485 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d fo r high vo lta g e s w itc h in g a p p lica tio n s. FEATURES • L o w O n-R esistance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2478is N-Channel MOS Field E ffe c tT ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2476 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE DIMENSIONS in millimeter fo r high vo lta g e s w itc h in g a p p lica tio n s.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2487 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2487 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high vo lta g e s w itc h in g a p p lica tio n s.

2SA936

Contextual Info: S ÿ > y X $ /Transistors 9 Q “ A Q 1 R w 2SA936 1 1- * * ty T l/y°ly~ ^ pnp v •;=i u > s > h? > ¡HiiHl & Z ' f High Gain Amp. & Switching Epitaxial Planar PNP Silicon Darlington Transistor • ÿ f ff i^ jiS I /D im e n s io n s U nit : mm) • tt*

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2514 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d fo r high c u rre n t s w itc h in g a p p lica tio n s. FEATURES • S u p e r L o w O n-R esistance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2511 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high c u rre n t s w itc h in g a p p lica tio n s.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE D IM E N SIO N S The 2SK2515 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d in m illim eter fo r high c u rre n t s w itc h in g a p p lica tio n s.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2486 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high vo lta g e s w itc h in g a p p lica tio n s.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2488 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high vo lta g e s w itc h in g a p p lica tio n s.

BN1A4M

Abstract: un8h 5942
Contextual Info: - J - 57 . C / -tt^ê* h ~7 C om po und Transistor BN1 A 4 M m tte m ft PNP X e m $ W IU ^ -fô : m m * O s < 4 7 X í É í ñ ; £ F í3 j l L - 0 ' ¿ 1 ' o (R i = o B A I A 4 M 10 t k Q , R 2 = 10 k Q ) =¡ > 7 ° U t ( T a n =

2SK458

Abstract: 2SK45
Contextual Info: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C

Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK541-60A/B PowerMOS transistor Logic level FET PHI L IP S I N T E R N A T I O N A L N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

k54160a

Abstract: BUK541 BUK541-60A BUK541-60B k541 TRANSISTOR k541
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode logic level field-effect power transistor in a plastic full-pack

k541

Abstract: K54-16 BUK541 BUK541-60A BUK541-60B
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

transistor et 454

Abstract: 2sk542 DC-DC H14 F530 T108 T460
Contextual Info: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

k 246 transistor fet

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance and has