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    TRANSISTOR TT 2190 Search Results

    TRANSISTOR TT 2190 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TT 2190 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motorola HEP cross reference

    Abstract: EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64
    Text: BR1513/D Rev. 2, Apr-2001 ECLinPS Plus Device Data ECLinPS Plus Device Data Advanced ECL in Picoseconds BR1513/D Rev. 2, Apr–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved” ECLinPS, ECLinPS Lite, and ECLinPS Plus are trademarks of Semiconductor Components Industries, LLC.


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    PDF BR1513/D Apr-2001 r14525 DLD601 motorola HEP cross reference EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64

    Untitled

    Abstract: No abstract text available
    Text: MC100EP16VT 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination The MC100EP16VT is a differential receiver functionally equivalent to the 100EP16 with input pins controlling the amplitude of the outputs pin 1 and providing an internal termination network (pin 4).


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    PDF MC100EP16VT 100EP16 EP16VT MC100EP16VT AND8020

    rsn 3502

    Abstract: rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604
    Text: FS7000 SERIES 0.5 m STANDARD CELL 1998 FS73A_B HOLTEK Semiconductor Inc. TABLE OF CONTENTS - INDEX -I. Functional Index of Macrocells ………………………….………… I-1 II. Alphanumeric index of Macrocells …………………………….…… II-1


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    PDF FS7000 rsn 3502 rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604

    Untitled

    Abstract: No abstract text available
    Text: MC100EP16VS 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


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    PDF MC100EP16VS 100EP16 EP16VS r14525 MC100EP16VS/D

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    KEP62

    Abstract: MC100 MC100EP16VS MC100EP16VSD Variable Resistor 3305
    Text: MC100EP16VS 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


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    PDF MC100EP16VS MC100EP16VS 100EP16 EP16VS r14525 MC100EP16VS/D KEP62 MC100 MC100EP16VSD Variable Resistor 3305

    KP63

    Abstract: AND8020 MC100 MC100EP16VT 3795 8-pin
    Text: MC100EP16VT 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination The MC100EP16VT is a differential receiver functionally equivalent to the 100EP16 with input pins controlling the amplitude of the outputs pin 1 and providing an internal termination network (pin 4).


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    PDF MC100EP16VT MC100EP16VT 100EP16 EP16VT r14525 MC100EP16VT/D KP63 AND8020 MC100 3795 8-pin

    ds28el22

    Abstract: No abstract text available
    Text: ABRIDGED DATA SHEET DS24L65 DeepCover Secure Authenticator with SHA-256 Coprocessor and 1-Wire Master Function General Description Features DeepCover embedded security solutions cloak sensitive data under multiple layers of advanced physical security to


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    PDF DS24L65 SHA-256 32-Byte DS24L65) SHA256 SHA-256 com/DS24L65 ds28el22

    DS24L65

    Abstract: DS28EL15 DS28el22 DS28EL25 DS28EL DS28EL22 full JESD47G
    Text: ABRIDGED DATA SHEET DS24L65 DeepCover Secure Authenticator with SHA-256 Coprocessor and 1-Wire Master Function General Description Features DeepCover embedded security solutions cloak sensitive data under multiple layers of advanced physical security to provide the most secure key storage possible. The


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    PDF DS24L65 SHA-256 DS24L65) com/DS24L65 DS28EL15 DS28el22 DS28EL25 DS28EL DS28EL22 full JESD47G

    Untitled

    Abstract: No abstract text available
    Text: ABRIDGED DATA SHEET DS24L65 DeepCover Secure Authenticator with SHA-256 Coprocessor and 1-Wire Master Function General Description Features DeepCover embedded security solutions cloak sensitive data under multiple layers of advanced physical security to


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    PDF DS24L65 SHA-256 32-Byte DS24L65) SHA256 SHA-256 com/DS24L65

    Untitled

    Abstract: No abstract text available
    Text: ABRIDGED DATA SHEET DS2465 DeepCover Secure Authenticator with SHA-256 Coprocessor and 1-Wire Master Function General Description Features DeepCover embedded security solutions cloak sensitive data under multiple layers of advanced physical security to provide the most secure key storage possible.


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    PDF DS2465 SHA-256 32-Byte DS2465)

    Untitled

    Abstract: No abstract text available
    Text: ABRIDGED DATA SHEET DS2465 DeepCover Secure Authenticator with SHA-256 Coprocessor and 1-Wire Master Function General Description Features DeepCover embedded security solutions cloak sensitive data under multiple layers of advanced physical security to provide the most secure key storage possible.


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    PDF DS2465 SHA-256 32-Byte DS2465)

    JESD47G

    Abstract: DS28E15
    Text: ABRIDGED DATA SHEET DS2465 DeepCover Secure Authenticator with SHA-256 Coprocessor and 1-Wire Master Function General Description Features DeepCover embedded security solutions cloak sensitive data under multiple layers of advanced physical security to provide the most secure key storage possible.


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    PDF DS2465 SHA-256 DS2465) JESD47G DS28E15

    DS2465P

    Abstract: DS28E15 JESD47G
    Text: ABRIDGED DATA SHEET 219-0017; Rev 0; 4/12 DS2465 SHA-256 Coprocessor with 1-Wire Master Function General Description Features The DS2465 is a SHA-256 coprocessor with built-in 1-Wire master that provides the SHA-256 and memory functionality required by a host system to communicate


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    PDF DS2465 SHA-256 DS2465P DS28E15 JESD47G

    JESD47G

    Abstract: SHA-256 DS28E15
    Text: ABRIDGED DATA SHEET DS2465 DeepCover Secure Authenticator with SHA-256 Coprocessor and 1-Wire Master Function General Description Features The DS2465 is a SHA-256 coprocessor with built-in 1-Wire master that provides the SHA-256 and memory functionality required by a host system to communicate


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    PDF DS2465 SHA-256 JESD47G DS28E15

    Transistor TT 2140

    Abstract: transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200
    Text: EPSON _ SSC2000 Series Standard Cell • • • • Built-in Analog Circuit Internal Two Power Supplies Level Shifter Wide Operating Voltage: 0.9 V to 6.0 V Up to 11,000 gates I DESCRIPTION T he SS C 2000 series is a C M O S standard cell w ith low -threshold m anufacturing process providing low voltage


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    PDF SSC2000 WU01- Transistor TT 2140 transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN3206 _ F C 1 3 2 No.3286 NPN Epitaxial Planar Silicon Composite Transistor Sw itching Applications with Bias Resistance F e a tu re s • On-chip bias resistances (R1 = lOkii, R2 = 47kC2) • Composite type with 2 transistors contained in the CP package currently in use, improving the


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    PDF EN3206 47kC2) FC132 2SC4047,

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


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    PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    4825P

    Abstract: transistor ZTX108 DL701 application dual slope DVM DL-707 70570 4403 transistor ZTX108
    Text: ZE TE X INC ÌS nTOSTê GGGbim T 95D 06141 l^ S M Low power 3 1/2 digit DVM integrated circuit FEATURES • 3/2 Decade display ± 1999 max. reading • Automatic polarity detection and indication • Leading zero suppression • Overload indication • Multiplexed B .C .D . outputs capable of


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    PDF ZNA116E ZNA116E 100kfi 200kfl 20Mii 200mA 4825P transistor ZTX108 DL701 application dual slope DVM DL-707 70570 4403 transistor ZTX108

    Untitled

    Abstract: No abstract text available
    Text: C ontents Features. 1 Block D iagram . 1 Terminal Functions Refer to the dimensions


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    PDF

    BC 104k capacitor

    Abstract: 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30
    Text: V T C INC 9388929 TT D D I ^300^5^ DDGIMGM 4 V T C I NC 99D 01404 VA2713 T *7 9 -0 7 -2 0 DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES AND BUFFER P R E LIM IN A R Y LSP FAMILY DATA SHEETS FEATURES • Low Offset Voltage: 0.5mV


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    PDF VA2713 75MHz 100MHz VA2713 20KHz 50MHz. 30MHz 30MHz. 10KHz 100KHZ BC 104k capacitor 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30

    ST MEET CHN 507

    Abstract: CHN 801 diode CHN 507 TRANSISTOR chn 408 MOSFET 818 ln LT10541 typical 2n2222 npn transistors
    Text: r r u t m i TECHNOLOGY 1/ _ LT1054 S w itch ed -C ap a citor Voltage C onverter with Regulator F€ flTU R € S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ ■ ■ The LT1054 is a monolithic, bipolar, switched-capacitor voltage converter and regulator. The LT1054 provides


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    PDF LT1054 LT1054 100mA ST MEET CHN 507 CHN 801 diode CHN 507 TRANSISTOR chn 408 MOSFET 818 ln LT10541 typical 2n2222 npn transistors