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    TRANSISTOR TO-92 SS8050D Search Results

    TRANSISTOR TO-92 SS8050D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-92 SS8050D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SS8050 application notes

    Abstract: SS8050 cross reference transistor NPN TO-92 2W SS8550 cross reference SS8050 1.5A NPN power transistor TO-92 transistor TO-92 SS8050 SS8050DTA SS8050BBU SS8050DBU
    Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W TC=25°C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor


    Original     		PDF SS8050 SS8550 SS8050 SS8050DCHBU SS8050 application notes SS8050 cross reference transistor NPN TO-92 2W SS8550 cross reference 1.5A NPN power transistor TO-92 transistor TO-92 SS8050 SS8050DTA SS8050BBU SS8050DBU

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF