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    TRANSISTOR TO-92 A1015 Search Results

    TRANSISTOR TO-92 A1015 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-92 A1015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1015 gr

    Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units


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    PDF A1015 -100mA, -10mA 30MHz A1015 gr transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015

    a1015 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO


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    PDF A1015 -100mA, -10mA 30MHz a1015 transistor

    A1015 transistor

    Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
    Text: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


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    PDF A1015 -100mA, -10mA 30MHz A1015 transistor transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units


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    PDF A1015 -100mA, -10mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR( PNP ) TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage


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    PDF A1015 30MHz 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage


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    PDF A1015 -100mA, -10mA 30MHz

    A1015

    Abstract: A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent
    Text: A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank


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    PDF A1015 A1015-O A1015-Y A1015-GR 04-Mar-2011 -100mA, -10mA 30MHz A1015 A1015GR A1015Y A1015-Y A1015-GR transistor a1015y A1015 gr A1015-GR H transistor A1015 A1015 equivalent

    Untitled

    Abstract: No abstract text available
    Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA


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    PDF KSA1015 KSC1815 KSA1015GRTA A1015 KSA1015YTA

    a1015 transistor

    Abstract: transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015
    Text: A1015 Transistor PNP TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage


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    PDF A1015 -100A, -100mA, -10mA 30MHz a1015 transistor transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015

    Untitled

    Abstract: No abstract text available
    Text: A1015 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 1.27 Typ. Power Dissipation 1: Emitter 2: Collector 3: Base 1.25±0.2 14.3±0.2


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    PDF A1015 -100mA, -10mA 30MHz 01-June-2002

    transistor A1015 GR

    Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR
    Text: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    PDF A1015 -100mA, -10mA 30MHz transistor A1015 GR br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR

    A1015

    Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR
    Text: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


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    PDF A1015 A1015 A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR

    SED1352

    Abstract: CON32A lcd 2X16 Epson lcd Epson 2x16 74ls00 SED1352FOB 2n3905 CON40A I8086 SMD LD3
    Text: SED1352 Graphics LCD Controller SED1352 TECHNICAL MANUAL Document Number: X16B-Q-001-06 Copyright 1997, 1998 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


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    PDF SED1352 SED1352 X16B-Q-001-06 SED1352: X16-AN-005-07 CON32A lcd 2X16 Epson lcd Epson 2x16 74ls00 SED1352FOB 2n3905 CON40A I8086 SMD LD3

    CON32A

    Abstract: SRM20256LM10 SED1352 interfacing lcd with 8086 SED1352F0B T724AB A1015 equivalent smd transistor va6 va6 smd MC68000
    Text: SED1352F0B Dot Matrix Graphics LCD Controller SED1352F0B TECHNICAL MANUAL Issue Date: 06/03/96 Copyright 1996 S-MOS Systems Inc. All rights reserved. This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,


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    PDF SED1352F0B SED1352F0B X16-AN-006-03 25MHz 12MHz 25MHz 12Mhz CON32A SRM20256LM10 SED1352 interfacing lcd with 8086 T724AB A1015 equivalent smd transistor va6 va6 smd MC68000

    interfacing of lcd with 8086

    Abstract: S1D13503F00A interfacing lcd with 8086 S1D13502 5 x 7 DOT MATRIX AND 74LS374 DIAGRAM circuit diagram using 74ls374 and dot matrix display CON32A 74LS00 smd transistor va6 block diagram of lcd display 16x4
    Text: S1D13503 Graphics LCD Controller S1D13503 TECHNICAL MANUAL Issue Date: 01/01/30 Document Number: X18A-Q-001-07 Copyright 1997, 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


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    PDF S1D13503 S1D13503 X18A-Q-001-07 S1D13502 X18A-A-001-xx, X18A-G-008-04 S1D13502 interfacing of lcd with 8086 S1D13503F00A interfacing lcd with 8086 5 x 7 DOT MATRIX AND 74LS374 DIAGRAM circuit diagram using 74ls374 and dot matrix display CON32A 74LS00 smd transistor va6 block diagram of lcd display 16x4

    transistor A1046

    Abstract: A1046 transistor TRANSISTOR A1048 A1048 transistor replacement of transistor A1006 transistor A1267 80C186 programming TRANSISTOR A1124 A1046 replacement parts for A1046 transistor
    Text: 80C186EA/80C188EA Microprocessor User’s Manual 80C186EA/80C188EA Microprocessor User’s Manual 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions


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    PDF 80C186EA/80C188EA transistor A1046 A1046 transistor TRANSISTOR A1048 A1048 transistor replacement of transistor A1006 transistor A1267 80C186 programming TRANSISTOR A1124 A1046 replacement parts for A1046 transistor

    A1015

    Abstract: A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92
    Text: Hcmam TO-92 Piasti A1015 Encapsulate Transistors TO-92 TRANSISTOR P N P FEATURES Power dissipation 1,EMITTER P CM • 0,4 Collecto cu ent W (Tamb=25’’C> 2.COLLECTOR lCM : -0.15 A Collecto -base voltage 3.BASE 1 2 3 • -50 V Ope ating and storage junction temperature range


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    PDF A1015 A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92

    A1015

    Abstract: A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015
    Text: M C C TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP FEATU R E S P cm; 0.4W (T a m b = 2 5 t) Icm: -0.15A /voltage V(BR)CBO: -5 0 V M S M M i a tofeltetoraga Junction temperature range Tj.Tstg: -55X2- to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w i s e


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    PDF A1015 -55X2- A1015 A1015 y A1015 PNP TRANSISTOR br a1015 pnp a1015

    a1015gr

    Abstract: A1015Y a1015-y A1015G A1015-GR transistor A1015Y A1015Y TE A-1015gr 2PA1015 transistor C 1815
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor 2PA1015


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    PDF 2PA1015 115002/00/03/pp8 a1015gr A1015Y a1015-y A1015G A1015-GR transistor A1015Y A1015Y TE A-1015gr 2PA1015 transistor C 1815

    A1015Y

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP general purpose transistor 2PA1015 FEATURES PINNING • Low curren t max. 150 mA PIN • Low voltage (max. 50 V). APPLICATIONS DESCRIPTION 1 base 2 co lle cto r 3 e m itte r • G eneral purpose sw itching and am plification.


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    PDF 2PA1015 SC-43 A1015Y

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    IFR-GDC40PW

    Abstract: No abstract text available
    Text: CONTENTS • LED INDICATOR LAMPS 5 • MINI TYPE LED LAMPS 11 • SPECIAL TYPE LED LAMPS 11 • TWO-COLOR LED LAMPS 13 • BLINKING LED LAMPS 13 •LIG H T BAR LED 13 . ULTRA-BRIGHT LED LAMPS 13 • LED NUMBERIC DISPLAY 15 . DOT MATRIX LED DISPLAY 19 • INFRARED EMITTING DIODE


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    OFWG*3203

    Abstract: OFWG colour tv power supply bu 1802 chn 719 TRANSISTOR NPN D313 TDA3654 equivalent R1413 TDA2653 colour tv power supply circuit diagram TDA2578
    Text: Philips Semiconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintenance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits


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    PDF BA481 toSAA7197 SAA7199 TDA4680 TDA4685 pA733C OFWG*3203 OFWG colour tv power supply bu 1802 chn 719 TRANSISTOR NPN D313 TDA3654 equivalent R1413 TDA2653 colour tv power supply circuit diagram TDA2578

    LM317T vw

    Abstract: TS2D 64SED IC 74LS00 transistor AE code PNP smd
    Text: S-MOS S Y S T E M S A Seiko Epson. Affiliale SED1352 Graphics LCD Controller SED1352 TECHNICAL MANUAL Issue Date: 98/01/27 Document No. X16B-Q-001-04 C o p y r ig h t 1997, 1998 S -M O S S y s te m s Inc. A ll rig h ts re served . T h is d o c u m e n t, and a n y text d e rived, e x tra c te d o r tra n s m itte d fro m it, is th e so le p ro p e rty of S -M O S S yste m s Inc. and m a y not b e use d , cop ie d,


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    PDF SED1352 X16B-Q-001-04 SED1352: X16-AN-005-05 X16-AN-005 LM317T vw TS2D 64SED IC 74LS00 transistor AE code PNP smd