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    TRANSISTOR TO-264 OUTLINE DIMENSIONS Search Results

    TRANSISTOR TO-264 OUTLINE DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2712 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC3325 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2713 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=0.1 A / hFE=200~700 / VCE(sat)=0.3 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC4116 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-323 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-264 OUTLINE DIMENSIONS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


    Original     		UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236 PDF

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1 PDF

    marking 4ft sot363

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Preliminary specification 1999 May 28 Philips Semiconductors Preliminary specification NPN general purpose double transistor BC846S FEATURES • Two transistors in one package with SC-88 dimensions


    Original     		MBD128 BC846S SC-88 MAM340 BC846S SC-88) 115002/01/pp8 marking 4ft sot363 PDF

    LB 1639

    Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem PDF

    TDK flyback transformer

    Abstract: EE10 bobbin AN2811 TSM103W CAPPR2-5X11 TSM103 VIPER17 BAT46JFILM cappr3.5-8x12 STTH1R06A
    Text: AN2811 Application note 3.5 W non-isolated offline constant-current LED driver based on VIPER17 Introduction High brightness LEDs are becoming a prominent source of lighting. Compared to conventional incandescent bulbs, high brightness LEDs light emitting diodes have


    Original     		AN2811 VIPER17 TDK flyback transformer EE10 bobbin AN2811 TSM103W CAPPR2-5X11 TSM103 VIPER17 BAT46JFILM cappr3.5-8x12 STTH1R06A PDF

    e2v ccd

    Abstract: 7133A CCD67
    Text: CCD67 Back Illuminated AIMO High Performance Compact Pack CCD Sensor FEATURES * 256 x 256 Pixel Image Area. * 26 mm Square Pixels. * Low Noise, High Responsivity Output Amplifier. * 100% Active Area. * Gated Dump Drain on Output Register. * Low Dark Current


    Original     		CCD67 e2v ccd 7133A PDF

    e2v ccd

    Abstract: e2v CCD67 CCD active area 8 x 8
    Text: CCD67 Front Illuminated AIMO High Performance Compact Pack CCD Sensor FEATURES * 256 x 256 Pixel Image Area. * 26 mm Square Pixels. * Low Noise, High Responsivity Output Amplifier. * 100% Active Area. * Gated Dump Drain on Output Register. INTRODUCTION This version of the CCD67 family of CCD Sensors is a frame


    Original     		CCD67 e2v ccd e2v CCD67 CCD active area 8 x 8 PDF

    smps 48v 800w

    Abstract: 48V SMPS 1000w 230 AC to 5V dc smps smps 1000W DC 12v to AC 220v 1000w 1000w DC 12v to AC 220v 230V INPUT TO 48V 10A OUTPUT SMPS smps 800W DC 12v to AC 220v 500w 1000W SMPS
    Text: com.greegoo.www Greegoo Elextric Co.,Ltd. 2007 Switching Power Supplies Introduction Switching mode power supply 1- Enclosed type switching power supplies 15W Single Output Switching Power Supply Model Output GS-15. Input Feature • High efficiency, high reliability, lost cost


    Original     		200ms 100ms 240-370VDC 230VAC 500VDC UL508 UL60950-1TUV EN60950-1 EN55022 EN61000-3-2 smps 48v 800w 48V SMPS 1000w 230 AC to 5V dc smps smps 1000W DC 12v to AC 220v 1000w 1000w DC 12v to AC 220v 230V INPUT TO 48V 10A OUTPUT SMPS smps 800W DC 12v to AC 220v 500w 1000W SMPS PDF

    e2v CCD67

    Abstract: CCD67 7133A e2v ccd 7133a 1 equivalent
    Text: CCD67 Back Illuminated NIMO High Performance Compact Pack CCD Sensor FEATURES * 256 x 256 Pixel Image Area. * 26 mm Square Pixels. * Low Noise, High Responsivity Output Amplifier. * 100% Active Area. * Gated Dump Drain on Output Register. INTRODUCTION This version of the CCD67 family of CCD sensors is a frame


    Original     		CCD67 e2v CCD67 7133A e2v ccd 7133a 1 equivalent PDF

    TRANSISTOR D 471

    Abstract: BF485PN
    Text: Philips Semiconductors For hook switches in equipment such as wired/cordless phones, fax machines and modems, the BF485PN dual transistor offers an ideal, cost-effective solution. Not only is it the first dual high-voltage transistor in a single SC-74 / SOT457 mini surface-mount package,


    Original     		BF485PN SC-74 OT457 BF485PN) TRANSISTOR D 471 PDF

    powerflex 525

    Abstract: PFLEX-AT001 Allen-Bradley vfd manual 525 140M-C2E-B63 140M-C2E-C16 140M-C2E-C10 25B-A011N114 140U-H6C3-C60 vfd B DELTA programming manual 140M-C2E-B25
    Text: Technical Data PowerFlex 520-Series AC Drive Specifications Original Instructions Topic Page Product Overview 2 Catalog Number Explanation 8 Technical Specifications 9 Environmental Specifications 12 Certifications 13 Dimensions and Weights 14 Design Considerations


    Original     		520-Series 520-TD001D-EN-E 520-TD001C-EN-E powerflex 525 PFLEX-AT001 Allen-Bradley vfd manual 525 140M-C2E-B63 140M-C2E-C16 140M-C2E-C10 25B-A011N114 140U-H6C3-C60 vfd B DELTA programming manual 140M-C2E-B25 PDF

    BFV469

    Abstract: transistor NPN 3474 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D100 BFV469 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor BFV469 FEATURES PINNING • High transition frequency


    Original     		M3D100 BFV469 O-126; MAM254 SCA63 115002/00/02/pp8 BFV469 transistor NPN 3474 BP317 PDF

    301 marking code PNP transistor

    Abstract: BCV65 2108 npn transistor Philips MARKING CODE BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV65 NPN/PNP general purpose transistor Product specification Supersedes data of 1997 Apr 22 1999 Apr 22 Philips Semiconductors Product specification NPN/PNP general purpose transistor FEATURES BCV65 PINNING • Low current max. 100 mA


    Original     		M3D071 BCV65 OT143B MAM333 OT143B) SCA63 115002/00/03/pp8 301 marking code PNP transistor BCV65 2108 npn transistor Philips MARKING CODE BP317 PDF

    2108 npn transistor

    Abstract: TRANSISTOR D 471 2PC945P
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING


    Original     		M3D186 2PC945 2PA733. MAM259 115002/03/pp8 2108 npn transistor TRANSISTOR D 471 2PC945P PDF

    2108 npn transistor

    Abstract: 2PC1815 TRANSISTOR D 471
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 28 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 PINNING FEATURES


    Original     		M3D186 2PC1815 2PA1015. MAM259 115002/03/pp8 2108 npn transistor 2PC1815 TRANSISTOR D 471 PDF

    bc517

    Abstract: StR 40000 or transistor transistor BC517
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA


    Original     		M3D186 BC517 BC516. MAM302 SCA63 115002/00/04/pp8 bc517 StR 40000 or transistor transistor BC517 PDF

    2PA1015

    Abstract: 2PA1015GR 2PA1015Y 2PC1815 BP317 AN 6752
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose transistor 2PA1015 FEATURES PINNING


    Original     		M3D186 2PA1015 2PC1815. MAM285 SCA63 115002/00/03/pp8 2PA1015 2PA1015GR 2PA1015Y 2PC1815 BP317 AN 6752 PDF

    Bf240

    Abstract: transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF240 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING


    Original     		M3D186 BF240 MAM258 SCA63 115002/00/04/pp8 Bf240 transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE ^24^02^ 00171bl TT5 • M57726 144-148MHz, 12.5V, 43W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM EHH- > — II— PIN : CDPin : RF INPUT VCC1 : 1st. DC SUPPLY O V C C 2 : 2nd. DC SUPPLY ®PO : RF OUTPUT


    OCR Scan     		00171b M57726 144-148MHz, PDF

    TRANSISTOR nf 842

    Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz


    OCR Scan     		NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534 PDF

    TRANSISTOR nf 842

    Abstract: D 843 Transistor transistor su 312
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:


    OCR Scan     		NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E IX /IT E O H Today’s Results.tomorrow's Visio 0.250 AMP POSITIVE VOLTAGE REGULATORS EZ55Z3L TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com April 13, 1998 DESCRIPTION FEATURES The EZ55Z3L voltage regulators are monolithic integrated circuits designed for use in applications


    OCR Scan     		EZ55Z3L TEL805-498-2111 EZ55Z3L 250mA OT-223 Z55Z3L PDF

    LT 5207

    Abstract: ZX sot
    Text: í¡ÍlS E I\/IT E O H TA Today's Results.tomorrow's Visio 0.250 AMP POSITIVE VOLTAGE REGULATORS EZ55Z3L TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com April 13, 1998 DESCRIPTION FEATURES The EZ55Z3L voltage regulators are monolithic integrated circuits designed for use in applications


    OCR Scan     		EZ55Z3L TEL805-498-2111 EZ55Z3L 250mA OT-223 LT 5207 ZX sot PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS ñ235bQS QD^bbbB H51 Low-Drop Voltage Regulator TLE 4276 Features • • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics


    OCR Scan     		235bQS Q67000-A9262 P-T0220-5-3 Q67000-A9263 Q67000-A9264 Q67006-A9266 P-T0220-5-122 Q67006-A9268 PDF