TRANSISTOR TL 430 C Search Results

NPN Transistor 1500V

Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
Contextual Info: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V

NTE2301

Contextual Info: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction

NTE163A

Contextual Info: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V

NPN Transistor 1.5A 700V

Contextual Info: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection

transistor tl 430 c

Contextual Info: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =

NTE127

Abstract: TL 187 TL 188 TRANSISTOR PNP
Contextual Info: NTE127 Germanium PNP Transistor Horizontal Output Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320V

NPN Transistor 50A 400V

Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Contextual Info: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly

NTE53

Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
Contextual Info: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for

NTE52

Contextual Info: NTE52 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for

NTE2319

Contextual Info: NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated

nte98

Contextual Info: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

150w darlington transistor to3 package

Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
Contextual Info: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45A CASE OUTLINE: TO-204AA (TO-3) ENHANCEMENT MODE HIGH VOLTAGE FIELD EFFECT TRANSISTOR

Contextual Info: 16P IN S 0P PS7841-A15 SOLID STATE RELAY FOR OPTICAL DAA FEATURES_ DESCRIPTION_ • FOR OPTICAL DAA CIRCUIT Solid State Relay Photocoupler AC Input Response Diode Bridge Darlington Transistor PS7841 -A15 is a solid state relay for optical DAA (Data Access

B68 zener diode

Abstract: 1B2 zener diode diode zener 600v 1a M114 T151 T810 T930
Contextual Info: 1 D I 3 0 0 M P - 0 5 0 3 0 0 A /< 7 - : Outline Drawings ii I- ai -J1J0-, h POWER TRANSISTOR MODULE : Features • h FE ^ S u • High DC Current Gain Krtî» : Applications • ^ General Purpose Inverter • Uninterruptible Power Supply • N C l f S e r v o & Spindle Drive for NC Machine Tools

Contextual Info: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 15 AMPERE POWER TRANSISTOR NPN SILICON 300 and 400 VOLTS 175 WATTS The 2N6546 and 2N6547 transistors are designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 220 volt line operated

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

Contextual Info: 1 D I 4 M N - 1 2 4 A : Outline Drawings / < 7 - POW ER TRAIMSISTOR MODULE •¡ftJt: : Features • hFe*''i§i' High DC Current Gain * - Kl*ligE •isflfcW SiaiiEW fti : Applications • i/lffl'f > s t—9 General Purpose Inverter • Uninterruptible Power Supply

transistor B324

Abstract: B324 transistor b324 B-324 diode ZENER EJJ 1DI200ZN-120 M115
Contextual Info: 1DI200ZN-120 200A y < r7 - h : Outline Drawings 5 POWER TRANSISTOR MODULE •Features • hFE^i^i' High DC Current Gain KF*3J& : Applications • >/LEK • • NC —9 General Purpose Inyerter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools

Contextual Info: SILICON SENSORS INC TS 5 F J Û H S 3 T 2 S □□□□3bb h NPN SILICON PHOTO DETECTOR Silicon Sensors SPT 15 is a high sensitivity N P N Planar Silicon Photo Transistor expressly designed for convenient application in th e tap e and card leaders, ch aracter recognition, industrial inspec­

solitron transistors

Abstract: Solitron Transistor U/25/20/TN26/15/850/solitron transistors
Contextual Info: ATOL© IN T R O D U C T IO N ^atitran Devices. Inc. Solitron E>evices, Inc. offers a comprehensive line of silicon semiconductor chips for Bipolar power transistors and planar diodes, as well as chips for MOS and Junction Field Effect Transistors. Working with the most sophisticated equipment, Solitron's experienced engineering

Marking code b4 sod-123

Contextual Info: B0520W thru B0540W SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 0.5 Ampere SOD-123 FEATURES • Low Forward Voltage Drop • High Conductance • Guard Ring Construction for Transient Protection SOD-123 Dim. Min.

N-1030

Abstract: Zener Diode B
Contextual Info: 1DI400MN-050 400A : Outline Drawings POWER TRANSISTOR MODULE : Features • hFE*f# i ' High DC Current Gain : Applications • i/LSK >*< — $ General Purpose Inverter • Uninterruptible Power Supply • N Mountingtorque*?9-4BkQ-0ffl Servo & Spindle Drive for NC Machine Tools

mosfet L 3055 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET