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    TRANSISTOR TE 901 EQUIVALENT Search Results

    TRANSISTOR TE 901 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TE 901 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium


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    PDF BFU520X OT143B BFU520X AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.


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    PDF BFU520X OT143B BFU520X AEC-Q101

    Mitsubishi a1shcpu

    Abstract: A1SY10EU A2SH A1SHcpu A1S61PN A1SJ71AT21B A6BAT Melsec a1shCPU MITSUBISHI INTELLIGENT POWER MODULES A1S61PN A2ASCPU-S30
    Text: MITSUBISHI ELECTRIC 130 Programmable Logic Controllers 1 MELSEC AnS, QnAS 130 130 X 6,5 93,6 130 1 2 3 4 5 6 7 STOP POWER RUN LCLR ERROR RESET RUN RESET MITSUBISHI MITSUBISHI 1 OUTPUT INPUT 3A AC 100/110/120V DC5V AC 200/220/240V 69,5 2 3 4 5 6 7 8 9 A B C


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    PDF 100/110/120V 200/220/240V 1SY80 1SY81 1SX81 59085-G, U-254070 D-40880 Mitsubishi a1shcpu A1SY10EU A2SH A1SHcpu A1S61PN A1SJ71AT21B A6BAT Melsec a1shCPU MITSUBISHI INTELLIGENT POWER MODULES A1S61PN A2ASCPU-S30

    en 5022 class B

    Abstract: ac-dc converter full wave type diagram cy 127 ac-dc converter full wave type schematic diagram lpc 1343 f DIN IEC 60068-2-52 schematic diagram ac-dc converter full wave
    Text: Cassette Style AC-DC Converters 190/230 Watt AC-DC Front End with PFC LPC Series LPC Series Converter with single stage AC to DC conversion and PFC No electrical isolation input to output Input voltage range 85 95 .255 V AC • Immunity to IEC/EN 61000-4-2, -3, -4, -5, -6


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    PDF LPC1901 LPC1902 en 5022 class B ac-dc converter full wave type diagram cy 127 ac-dc converter full wave type schematic diagram lpc 1343 f DIN IEC 60068-2-52 schematic diagram ac-dc converter full wave

    RU901

    Abstract: No abstract text available
    Text: S ~p > y 7> $ /Transistors RU901 R U 9 0 1 J K fîrt*h7 >'>'^dr Transistor Unit (Composite Transistor) / \ '7 7 ? 7 >~f / Buffer Amplifier • El/Dimensions (Unit : mm) 1) I 5 -y $ 7 * n 7|g|g&« 2 U S tF m , 2) A 2 K A "7 7 2 1 t- O .S ± O .I lO.SS 0.95


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    PDF RU901 SC-74 V/10m 100MHz RU901

    SGSD00030

    Abstract: transistor TE 901 equivalent
    Text: • _ / = ^ 7 7 ^ 5 3 7 ooaw a T S G S -T H O M S O N # Q f f ln o fô m iC T « ! g ■ S G ^ T '3 3 ' Z . 0 _ S D 0 0 0 3 0 /3 1 S G S-THOMSON 3QE /3 1 F I ] HIGH VOLTAGE, HIGH POWER, FAST SWITCHING DESC RIPTIO N The SGSD00030.SGSD00031 and SGSD00031 FI


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    PDF SGSD00030 SGSD00031 O-218 ISOWATT218 500ms transistor TE 901 equivalent

    3101-B

    Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
    Text: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •


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    PDF HFA3101 HFA3101 10GHz) 10GHz 1320nm 3101-B h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12

    Untitled

    Abstract: No abstract text available
    Text: in te i • 28F001BX-T/B 1M 128K x 8 CMOS FLASH MEMORY SmartDie Product Specification • High Integration Blocked Architecture — One 8 KByte Boot Block with Lock Out — Two 4 KByte Parameter Blocks — One 112 KByte Main Block — T = Top Boot, B = Bottom Boot


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    PDF 28F001BX-T/B X28F001BX-T70 X28F001BX-B70 X28F001BX-T90 X28F001BX-B90 X28F001BX-T120 X28F001BX-B120 28F001BX-T/28F001BX-B ER-20, RR-60,

    Untitled

    Abstract: No abstract text available
    Text: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r


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    PDF D-7030

    3146E

    Abstract: ca3183ae 3183a 3183e 3118A 3118T
    Text: G E S O L I D S T A T E Dl D E | 3ä75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 T “'H 3 * 2 .5 High-Voltage Transistor Arrays Features • M atched general-purpose transistors ■ V g £ m atched + 5 m V max. ■ Operation from D C to 120 M H z C A 3 1 1 8 A T , T ; C A 3 1 4 6 A E , E


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    PDF 75Clfll G014b3fc> CA3118, CA3146, CA3183 3146E ca3183ae 3183a 3183e 3118A 3118T

    Untitled

    Abstract: No abstract text available
    Text: 12-Bit, Fast Sampling Wideband Track-and-Hold APPLICATIO N S: FEATURES typical : • fla s h A /D d riv e r • h ig h -re s o lu tio n , s u b ra n g in g A /D d riv e r • s ig n a l d e g litc h in g (a s in C C D o r D /A syste m s) • c o m m u n ic a tio n s y ste m s


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    PDF 12-Bit, 31N4150

    m26123

    Abstract: monostable multivibrator using 74123 time delay circuit for ic 74123 application circuits of ic 74123 internal configuration of ic 74123 IC 7400 diagram and truth table ic 74123 74123 74123 time delay 74123 Diagram
    Text: Am26123*Am54/74123 Dual Retriggerable Resettable Monostable Multivibrator inctive Characteristics tetriggerable 0 to 100% duty cycle. Ons to °° output pulse width range. • Am 26123 outputs immune to noise triggering the monostable at the RC timing nodes.


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    PDF Am26123 Am54/74123 m26123 MIL-STD-883. monostable multivibrator using 74123 time delay circuit for ic 74123 application circuits of ic 74123 internal configuration of ic 74123 IC 7400 diagram and truth table ic 74123 74123 74123 time delay 74123 Diagram

    sprague 150d

    Abstract: CLC942 CLC942AI
    Text: 12-Bit, Fast Sampling Wideband Track-and-Hold APPLICATIO N S: FEATURES typical : • fla s h A /D d riv e r • h ig h -re s o lu tio n , s u b ra n g in g A /D d riv e r • s ig n a l d e g litc h in g (as in C C D o r D /A syste m s) • c o m m u n ic a tio n s y s te m s


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    PDF CLC942 12-Bit, D1-D31N4150 sprague 150d CLC942 CLC942AI

    GAL programmer schematic

    Abstract: L6924 transistor book gal programming 22v10 palce22v10 programming guide diodes catalog variable capacitor 8033 palce16v8 programming guide micropross mco 8050
    Text: a ZPAL Devices 1992 Data Book/Designer's Guide Advanced Micro Devices ZPAL D evices 1992 Data Book and Design Guide V A N C E D M I C R O D E V I C E S ^ ! 1992 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products


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    PDF 16V8Z 22V10Z 22V10 GAL programmer schematic L6924 transistor book gal programming 22v10 palce22v10 programming guide diodes catalog variable capacitor 8033 palce16v8 programming guide micropross mco 8050

    Untitled

    Abstract: No abstract text available
    Text: HFA3101 Semiconductor September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features T he HFA3101 is an all NPN tra n sisto r array con fig u re d as a • High G ain B andw idth P rod uct f j .10G Hz M u ltiplier Cell. Based on H arris bo nded w a fe r UHF-1 SO I


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    PDF HFA3101 HFA3101 1340nm 1320nm

    transistor ITT 2907

    Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
    Text: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz


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    PDF HFA3101 HFA3101 10GHz 15dBc 28dBc 22dBc 76MHz 825MHz 50MHz transistor ITT 2907 transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a

    4j08

    Abstract: TI930 SIEMENS saw filter
    Text: ^ M O T O R O L A - MC13158 /uA/ci-c.:*; In fo rm a tio n Wideband FM IF Subsystem WIDEBAND FM IF SUBSYSTEM FOR DECT AND DIGITAL APPLICATIONS The MC13158 is a wideband IF subsystem that is designed for high per­ formance data and analog applications. Excellent high frequency perfor­


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    PDF MC13158 MC13158 4j08 TI930 SIEMENS saw filter

    ip9010

    Abstract: PJ 0346
    Text: HIP9010 H A R R IS S E M I C O N D U C T O R È Description Features T h e H IP 9010 is used to provide a m ethod of detecting pre­ m ature de tona tion or “ K nock” in autom otive engines. Tw o S e n s o r Inputs • M ic ro p ro c e s s o r P ro g ram m a b le


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    PDF HIP9010 ip9010 PJ 0346

    MOTOROLA POWER TRANSISTOR lc 945

    Abstract: zener ap 474 940 629 MOTOROLA 113
    Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.


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    PDF RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    74LS82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
    Text: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­


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    PDF

    MRF163

    Abstract: Motorola AN211
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF163 The RF MOSFET Line 25 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER designed for w ideband large-signal output and driver applica tions in the 2 0 to 4 00 MHz range


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    PDF MRF163 RF163 MRF163 Motorola AN211

    ha 13627

    Abstract: transistor equivalent 0107 NA ISC 9809 code n42 MS801-4 data ic ha 13627 TF DKL 1307 TRANSISTOR equivalent BFG520 BFR520
    Text: DhmM o • w . ■ feb53*i31 Ga24TflT 10T B A P X £IilJjP « ® 2 IIH £2 2 ii£ i2 £S _ Product specification N AMER PHILIPS/DISCRETE L7E ]>“ NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure


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    PDF BFG520; BFG520/X; BFG520/XR OT143 OT143R BFG520 coll00 ha 13627 transistor equivalent 0107 NA ISC 9809 code n42 MS801-4 data ic ha 13627 TF DKL 1307 TRANSISTOR equivalent BFG520 BFR520

    4-Layer PCB Layout Guideline for video signals

    Abstract: No abstract text available
    Text: c la n tc c BISH PEHWRiÄE ÄNAMÄ ä Ä i f i i f Ä S M EL1508C r Differential DSL Line Driver in 00 n Features General Description • 450mA output drive capability The EL1508C is designed for driving full rate ADSL signals in both CO and CPE applications at very low pow er dissipation. The high


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    PDF EL1508C 450mA of-85dB -75dBc -70dB EL1503C EL1508C EL1508C. 4-Layer PCB Layout Guideline for video signals