TRANSISTOR TD-100 AX Search Results

diode sg 94

Abstract: GC522 diode sg 64
Contextual Info: r Z Z SGS-THOMSON Ä 7# S TD 2 N 50 Raoei ILE gra©M][](£S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 2N 50 V dss RDS(on Id 500 V < 5.5Í1 2 A • . . . . TYPICAL Ros(on) = 4.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: * 7# TYPE S TD 9N 10 SGS-THOMSON [MOeiMillLieraeiDIgS S T D 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0 .2 7 Q. 9 A TYPICAL RDS(on) = 0.23 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: *57 SGS-THOMSON TYPE S TD 6N 10L STD6N10L m N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss R DS on Id 100 V < 0 .4 5 Ü 6 A • • . . ■ . . ■ TYPICAL RDS(on) = 0.4 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SGS-THOMSON * 5 i L i O 7 M K I S T D 3 N 3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 3N 30L V dss R DS on Id 300 V < 1.4 a 3 A . . . . • TYPICAL RDs(on) = 1.15 0 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SGS-THOMSON :[Li ¥mî@ESgDe m S TD 2 N A 50 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD2NA50 V dss RDS on Id 500 V < 4 a 2.2 A . . . . . . . . TYPICAL RDS(on) = 3.25 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

K2100

Abstract: STD6N10L
Contextual Info: S G S - T H O M S O N ¿ 5 S T D 6N 1 0 L ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TD 6N 10L V dss RDS on Id 100 V < 0.4 5 C l 6 A • . ■ . . . ■ . TYPICAL RDS(on) = 0.4 Q. AVALANCHE RUGGED TECHNOLOGY

Contextual Info: eupec Technische Information / Technical Information BSM200GB120DLC ££££. vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

2N3904S

Abstract: 2N3906S 2N3904S SOT-23 2N3906S SOT-23 2N3904 ph-13 transistor 1N916 20MS
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES : ICEx=50nA Max. , IBL=50nA(M ax.) V eb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VcE(sat)=0.3V(Max.) @Ic=50mA, lB=5mA.

Diode DII

Abstract: 2SK299 2SK1518 equivalent 2SJ68 2SK1058 2sk135 application note 2SK1058 cross reference 2SK2265
Contextual Info: Section 5 Absolute Maximum Ratings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute M aximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS

2sk1058 equivalent

Abstract: 2SK1058 cross reference diode gs1j 2sc1343 2sk186 2SK2265 2SK317 2SJ68 2SK151 2sc1343 hitachi
Contextual Info: Section 5 A bsolute M axim um R atings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute Maximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS

Contextual Info: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FM M T555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C COMPLEMENTARY TYPE – FMMT455 PARTMARKING DETAIL – 555 B SOT23 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE

2n3904, itt

Abstract: pin configuration NPN transistor 2n3906 6,8 ITT TRANSISTOR 2N3904 E 25 ITT Intermetall
Contextual Info: 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor 2N3904 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. L m ax. 0 0 . 5 5

Contextual Info: Adjustable Micropower Low Dropout Linear Regulator with ENABLE Description The CS8271 is an adjustable m icrop­ ow er voltage regu lato r w ith very low quiescent curren t {60ßA typical at 100|iiA load . The o u tp u t supplies 100mA of load curren t w ith a m axi­

transistor a102

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 88NXX Preliminary CMOS IC BU I LT -I N DELAY CI RCU I T H I GH -PRECI SI ON V OLT AGE DET ECT OR ̈ DESCRI PT I ON The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A

MTA3055E

Abstract: a/MTA3055E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA3055E Fully Isolated TMOS E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.15 OHM M AX 60 VOLTS

Contextual Info: M AXIM UM RATINGS Rating S ym bol V alu e Drain-Source Voltage V DSS 60 Vdc Drain-G ate Voltage R g s = 1 M i’ll VDGR 60 Vdc (D Id + 115 £ 75 • 800 mA Drain C urrent — C ontinuous T ç = 25 C{1 TC - 100’C d l — Pulsed(2) 'd m G ate-Source Voltage

Contextual Info: Technische Information / Technical Information e u p e c BSM300GB120DLC ££££. vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: MMBT4403 Switching Transistor PNP Silicon COLLECTOR 3 3 * “G” Lead Pb -Free 1 BASE 1 2 SOT-23 2 EMITTER M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Thermal Characteristics

MMBT4403

Abstract: MMBT4403 2T MMBT4403LT1
Contextual Info: MMBT4403 Switching Transistor PNP Silicon COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board 1

MOTOROLA 3055V

Abstract: 3055VL 3055V
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate

2N6568

Contextual Info: ULTRA LOW R o n SWITCHING 2N6568 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 504 • LOW R Ds - 2!4 Ohms MAXIM U M « HIGH lDs s ~ 500 mA M INIM UM ELECTRICAL DATA ABSOLUTE M AXIM UM RATINGS SYMBOL 2N6568 UNITS Drain to Gate Voltage

1n60e

Abstract: MTD1N60E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD1N60E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on = 8.0 OHM N-Channel Enhancement-Mode Silicon Gate

014 IR MOSFET Transistor

Abstract: ZC220 TMOS E-FET TMOS power FET AN569 MTE125N20E MTE215N10E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTE125N20E ISOTOP™ TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 125 AMPERES 200 VOLTS RDS on = 0.015 OHM

2N4858 MOTOROLA

Abstract: 2N4858 2n4860a
Contextual Info: MOTOROLA SC XSTRS/R 1 EE D § F b3b?2S4 Ü0âbb42 M | " - 2 N 4 8 5 6 , A , thru 2 N 4 8 6 1 , A 2N4856, 2N4857, 2N4858 JAN, JTX, JTXV AVAILABLE CASE 22-03, STYLE 4 TO-18 TO-206AA M AXIM UM RA TIN G S Symbol Rating 2N48S6.A 2N4859.A 2N4857.A 2N4860.A 2N4858.A 2N4861.A