Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FM M T555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C COMPLEMENTARY TYPE – FMMT455 PARTMARKING DETAIL – 555 B SOT23 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE
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FMMT455
100ms
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transistor a102
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 88NXX Preliminary CMOS IC BU I LT -I N DELAY CI RCU I T H I GH -PRECI SI ON V OLT AGE DET ECT OR ̈ DESCRI PT I ON The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A
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88NXX
88NXX
QW-R502-368
transistor a102
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FZT755 ISSUE 5 – M ARCH 2005 FEATURES * 150 Volt VCEO * Low saturation voltage * Excellent h FE specified up to 1A pulsed . C E COM PLEM ENTARY TYPE – PARTM ARKING DETAIL – FZT655 FZT755 C B ABSOLUTE M AXIM UM RATINGS.
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OT223
FZT755
FZT655
100ms
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Untitled
Abstract: No abstract text available
Text: MMBT4403 Switching Transistor PNP Silicon COLLECTOR 3 3 * “G” Lead Pb -Free 1 BASE 1 2 SOT-23 2 EMITTER M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Thermal Characteristics
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MMBT4403
OT-23
55OLTAGE
OT-23
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MMBT4403
Abstract: MMBT4403 2T MMBT4403LT1
Text: MMBT4403 Switching Transistor PNP Silicon COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board 1
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MMBT4403
OT-23
OT-23
MMBT4403
MMBT4403 2T
MMBT4403LT1
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diode sg 94
Abstract: GC522 diode sg 64
Text: r Z Z SGS-THOMSON Ä 7# S TD 2 N 50 Raoei ILE gra©M][](£S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 2N 50 V dss RDS(on Id 500 V < 5.5Í1 2 A • . . . . TYPICAL Ros(on) = 4.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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O-251)
O-252)
O-251
O-252
L681001
diode sg 94
GC522
diode sg 64
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Untitled
Abstract: No abstract text available
Text: * 7# TYPE S TD 9N 10 SGS-THOMSON [MOeiMillLieraeiDIgS S T D 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0 .2 7 Q. 9 A TYPICAL RDS(on) = 0.23 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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O-251)
O-252)
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON TYPE S TD 6N 10L STD6N10L m N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss R DS on Id 100 V < 0 .4 5 Ü 6 A • • . . ■ . . ■ TYPICAL RDS(on) = 0.4 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STD6N10L
O-251)
O-252)
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 5 i L i O 7 M K I S T D 3 N 3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 3N 30L V dss R DS on Id 300 V < 1.4 a 3 A . . . . • TYPICAL RDs(on) = 1.15 0 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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O-251)
O-252)
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON :[Li ¥mî@ESgDe m S TD 2 N A 50 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD2NA50 V dss RDS on Id 500 V < 4 a 2.2 A . . . . . . . . TYPICAL RDS(on) = 3.25 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STD2NA50
O-251)
O-252)
O-251
0068772-B
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K2100
Abstract: STD6N10L
Text: S G S - T H O M S O N ¿ 5 S T D 6N 1 0 L ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TD 6N 10L V dss RDS on Id 100 V < 0.4 5 C l 6 A • . ■ . . . ■ . TYPICAL RDS(on) = 0.4 Q. AVALANCHE RUGGED TECHNOLOGY
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STD6N10L
O-251)
O-252)
STD6N10L
O-252
0068772-B
K2100
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Untitled
Abstract: No abstract text available
Text: eupec Technische Information / Technical Information BSM200GB120DLC ££££. vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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BSM200GB120DLC
BSM200GB120DLC
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2N3904S
Abstract: 2N3906S 2N3904S SOT-23 2N3906S SOT-23 2N3904 ph-13 transistor 1N916 20MS
Text: SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES : ICEx=50nA Max. , IBL=50nA(M ax.) V eb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VcE(sat)=0.3V(Max.) @Ic=50mA, lB=5mA.
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2N3904S
2N3906S.
60TTER
2N3904S
2N3906S
2N3904S SOT-23
2N3906S SOT-23
2N3904
ph-13 transistor
1N916
20MS
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Diode DII
Abstract: 2SK299 2SK1518 equivalent 2SJ68 2SK1058 2sk135 application note 2SK1058 cross reference 2SK2265
Text: Section 5 Absolute Maximum Ratings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute M aximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS
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2n3904, itt
Abstract: pin configuration NPN transistor 2n3906 6,8 ITT TRANSISTOR 2N3904 E 25 ITT Intermetall
Text: 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor 2N3904 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. L m ax. 0 0 . 5 5
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2N3906
2N3904
500pLS
2n3904, itt
pin configuration NPN transistor 2n3906
6,8 ITT
TRANSISTOR 2N3904 E 25
ITT Intermetall
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Untitled
Abstract: No abstract text available
Text: Adjustable Micropower Low Dropout Linear Regulator with ENABLE Description The CS8271 is an adjustable m icrop ow er voltage regu lato r w ith very low quiescent curren t {60ßA typical at 100|iiA load . The o u tp u t supplies 100mA of load curren t w ith a m axi
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CS8271
100mA
600mV.
50//A
MS-012
MS-001
CS8271YD8
CS8271YDR8
CS8271YN8
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MTA3055E
Abstract: a/MTA3055E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA3055E Fully Isolated TMOS E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.15 OHM M AX 60 VOLTS
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MTA3055E
MTA3055E
a/MTA3055E
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Untitled
Abstract: No abstract text available
Text: M AXIM UM RATINGS Rating S ym bol V alu e Drain-Source Voltage V DSS 60 Vdc Drain-G ate Voltage R g s = 1 M i’ll VDGR 60 Vdc (D Id + 115 £ 75 • 800 mA Drain C urrent — C ontinuous T ç = 25 C{1 TC - 100’C d l — Pulsed(2) 'd m G ate-Source Voltage
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2N7002LT1*
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information e u p e c BSM300GB120DLC ££££. vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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BSM300GB120DLC
BSM300GB120DLC
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MOTOROLA 3055V
Abstract: 3055VL 3055V
Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate
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MTD3055VL/D
MOTOROLA 3055V
3055VL
3055V
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2N6568
Abstract: No abstract text available
Text: ULTRA LOW R o n SWITCHING 2N6568 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 504 • LOW R Ds - 2!4 Ohms MAXIM U M « HIGH lDs s ~ 500 mA M INIM UM ELECTRICAL DATA ABSOLUTE M AXIM UM RATINGS SYMBOL 2N6568 UNITS Drain to Gate Voltage
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2N6568
2N6568
240aC
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1n60e
Abstract: MTD1N60E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD1N60E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on = 8.0 OHM N-Channel Enhancement-Mode Silicon Gate
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0E-05
0E-04
0E-03
OE-02
0E-01
1n60e
MTD1N60E
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014 IR MOSFET Transistor
Abstract: ZC220 TMOS E-FET TMOS power FET AN569 MTE125N20E MTE215N10E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTE125N20E ISOTOP™ TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 125 AMPERES 200 VOLTS RDS on = 0.015 OHM
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MTE215N10E
014 IR MOSFET Transistor
ZC220
TMOS E-FET
TMOS power FET
AN569
MTE125N20E
MTE215N10E
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2N4858 MOTOROLA
Abstract: 2N4858 2n4860a
Text: MOTOROLA SC XSTRS/R 1 EE D § F b3b?2S4 Ü0âbb42 M | " - 2 N 4 8 5 6 , A , thru 2 N 4 8 6 1 , A 2N4856, 2N4857, 2N4858 JAN, JTX, JTXV AVAILABLE CASE 22-03, STYLE 4 TO-18 TO-206AA M AXIM UM RA TIN G S Symbol Rating 2N48S6.A 2N4859.A 2N4857.A 2N4860.A 2N4858.A 2N4861.A
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2N4856,
2N4857,
2N4858
2N48S6
2N4859
2N4857
2N4860
2N4861
O-206AA)
2N4858 MOTOROLA
2n4860a
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