TRANSISTOR T2S Search Results

BLY88C

Contextual Info: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

BLY88

Contextual Info: N AMER PHILIPS/DISCRETE b'îE D • ^53^31 002=11^2 SO? ■ APX BLY88Ü/01 A V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

2N6107

Abstract: 2N6292
Contextual Info: 2N6107, 2N6292 f t 2N6107 2N6292 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR r*-> CO V _ J DIM MIN MAX A 14.42 16.51 B 9.63 10.67

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

Contextual Info: 2N6107, 2N6292 2N6107 2N6292 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1,15 1.40 3.75 3.88 2,29 2.79 2.54 3.43 0,56 12,70 14.73

BLX14

Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
Contextual Info: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

BFP843

Contextual Info: BFP843 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP843F Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M05 TYPE L2- tt-MOSVI TPf«ift7 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : R d S (ON)= lOOmO (Typ.)

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25J6ES40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35ns Max. (Ic = 25A) • Low saturation voltage:

Contextual Info: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

3.5b zener diode

Abstract: diode so3 NDB6050L NDP6050L
Contextual Info: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using

TRANSISTOR SMD MARKING CODE 7A

Contextual Info: BSP 296 I nf ineon technologies SIPMOS 9 Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Type '/ DS BSP 296 100 V Type BSP 296 Ordering Code Q67000-S067 1A Pin 2 WDS(on) Package Marking 0.8 Q SOT-223

2SK1471

Abstract: 2SK2153 2SK1474 2SB1205 160i FX209 2SJ188 2SJ336 2SK1468 CI 7001
Contextual Info: SAUYO New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.

2SB630

Abstract: 2SB710 2SB628 2SB631 2SB632 2SB709 2SD597 63A50
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING

UPC1342V

Abstract: UPC1342 transistor C 2987A transistor 2sc 4267 C1342V 40WTHD 2SD2013 PC1342V 2SC2987 C2987
Contextual Info: N E C 6427525 N E C ELECTRONICS INC DSE D | t,427S25 GG230t,4 7 | ~ E LE CTRON IC S INC 05E 23064 D BIPOLAR ANALOG INTEGRATED CIRCUIT MP C I 3 4 2 V 7~z-7 t/t2S'-C>/ 5 0 to 1 1 0 W POWER A M P LIFIE R DRIVER DESCRIPTION ¿¿PC1342V is a integrated monolithic circuit designed for 50 W to 110 W class HiFi audio power amplifier and consists of

buw41

Abstract: BUW41B BUW41A CA3725 2CB32
Contextual Info: BUW41, BUW41A, BUW41B H A RR IS SEMICON] SE CT OR File Number SbE D 1275 43 02 271 Ü D 4 G 7 1 3 T2S H H A S 5-A Sw itchM aX Power T ransistors T- Ie } TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

VTT1112

Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)

Vactec

Abstract: DDD11 VTT1112 VTT1113 VTT1114
Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)

transistor T2S

Abstract: Widlar
Contextual Info: LM1014 y% \ National \C A Sem iconductor LM1014 Motor Speed Regulator General Description The LM1014 is a monolithic integrated circuit specifically resigned to provide a low cost motor speed regulator for low voltage DC motors. Features • ■ ■ ■ ■

OMRON E5CN

Abstract: omron zen 10c1dr-d-v1 Omron SPEED sensor 12v m16 OMRON H5CX programming manual omron zen 10c1ar-a-v1 omron TS 101 DA analogue extension modules ZEN 10C1DR-D-V1 sv 120 230 liquids dual level relay manual omron e5cs Omron H7CR Catalog
Contextual Info: INDUSTRIAL COMPONENTS Product Selector 2004 / 2005 • Electromechanical relays • Timers • Counters • Programmable relays • Level and leakage controllers • Industrial switches • Pushbutton switches • Low voltage switch gear • Temperature controllers

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A