TRANSISTOR ST Search Results

TRANSISTOR ST Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR ST Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
AN3025 Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free Text: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace	Original	AN3025 AN3025 transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free	PDF
NPN EBC SOT-23 Abstract: SOT-23 EBC NPN transistor ECB TO-92 Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003	Original	PJP110A O-220 PJP168A PJ13003 PJ13005 PJ13007 NPN EBC SOT-23 SOT-23 EBC NPN transistor ECB TO-92	PDF
Halbleiterbauelemente DDR Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode Text: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-Leistungstransistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches	Original		PDF
BFR96 Abstract: BFR96 TRANSISTOR transistor bfr96 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers	OCR Scan	BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96	PDF
transistor case To 106 Abstract: BUT11A Transistor morocco 1300 Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION	Original	BUT11A BUT11A O-220 O-220 transistor case To 106 Transistor morocco 1300	PDF
Untitled Abstract: No abstract text available Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION	Original	BUT11A BUT11A O-220 O-220	PDF
4 npn transistor ic 14pin Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation	Original	PA104 PA104B: PA104G: 14-pin PA104 4 npn transistor ic 14pin lowest noise audio NPN transistor C10535E MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY	PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology	PDF
monochrome diagram Abstract: monochrome crt schematic BU407 Text: BU407 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ DESCRIPTION The BU407 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package.	Original	BU407 BU407 O-220 O-220 monochrome diagram monochrome crt schematic	PDF
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105	PDF
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG	PDF
STD123AS Abstract: No abstract text available Text: STD123AS Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information	Original	STD123AS 100mA OT-23 KSD-T5C016-000 STD123AS	PDF
PNP POWER TRANSISTOR SOT-32 Abstract: 2N5195 transistor 2N5195 industrial linear ic data book 2N5192 Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.	Original	2N5195 2N5195 OT-32 2N5192. OT-32 PNP POWER TRANSISTOR SOT-32 transistor 2N5195 industrial linear ic data book 2N5192	PDF

2sa1048 transistor Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104 Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.	Original	2SA1048 2SC2458 100mA, 2sa1048 transistor transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SA104	PDF
2sa1048 transistor Abstract: 2SA1048 2sc2458 equivalent 2SC2458 Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.	Original	2SA1048 2SC2458 100mA, 2sa1048 transistor 2SA1048 2sc2458 equivalent	PDF
D42DG Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105	PDF
Untitled Abstract: No abstract text available Text: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS	OCR Scan	BU806/807 BU806 BU807 BU806	PDF
2SC2458 Abstract: 2sc2458 equivalent 2SA1048 Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.	Original	2SA1048 2SC2458 100mA, 2sc2458 equivalent 2SA1048	PDF
2sa1048 transistor Abstract: 2sc2458 equivalent 2SA1048 2SC2458 Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.	Original	2SA1048 2SC2458 100mA, 2sa1048 transistor 2sc2458 equivalent 2SA1048	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it	Original	UP2855 UP2855 OT-223 UP2855L-AA3-R UP2855G-AA3-R QW-R207-024	PDF
BD234 Abstract: PNP POWER TRANSISTOR SOT-32 Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.	Original	BD234 BD234 OT-32 OT-32 PNP POWER TRANSISTOR SOT-32	PDF
2N2222A TO-92 Abstract: 2N2222A plastic 2N2222A plastic package 2n2222 st 2n2222a 2N2222A ST 2n2222 datasheet ST 2n2222 Transistor 2N2222A 2N2222A st Text: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.	Original	2N2222 2N2222A 2N2907 2N2907A 2N2222A TO-92 2N2222A plastic 2N2222A plastic package st 2n2222a 2N2222A ST 2n2222 datasheet ST 2n2222 Transistor 2N2222A 2N2222A st	PDF
2sa1015 equivalent Abstract: 2SA1015 2SC1815 st 2sc1815 Text: ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor ST 2SC1815 is recommended.	Original	2SA1015 2SC1815 150mA 100mA, 100Hz, 2sa1015 equivalent 2SA1015 st 2sc1815	PDF

TRANSISTOR ST Search Results

TRANSISTOR ST Result Highlights (5)

TRANSISTOR ST Datasheets Context Search

MCT8 opto

AN3025

NPN EBC SOT-23

Halbleiterbauelemente DDR

BFR96

transistor case To 106

Untitled

4 npn transistor ic 14pin

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

monochrome diagram

369D

369D

STD123AS

PNP POWER TRANSISTOR SOT-32

2sa1048 transistor

2sa1048 transistor

D42DG

Untitled

2SC2458

2sa1048 transistor

Untitled

BD234

2N2222A TO-92

2sa1015 equivalent