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    TRANSISTOR SOT23 BR Search Results

    TRANSISTOR SOT23 BR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 BR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 1G SOT23

    Abstract: base resistance for SOT23 FMMTA06TA 25 V 500mA TRANSISTOR SOT23 4446 NA MARKING SOT23 FMMTA06 transistor marking 44 sot23 FMMT-A06
    Text: FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V BR CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium power NPN transistor in a compact SOT23 package FEATURES SOT23 • 80V V CEO • Compact SOT23 package SYMBOL • HFE 50 @ IC = 100mA APPLICATIONS


    Original     		PDF FMMTA06 500mA 100mA marking 1G SOT23 base resistance for SOT23 FMMTA06TA 25 V 500mA TRANSISTOR SOT23 4446 NA MARKING SOT23 FMMTA06 transistor marking 44 sot23 FMMT-A06

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


    Original     		PDF FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084

    FMMTA42

    Abstract: FMMTA92 FMMTA92R pnp 200v fmmt-a
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF FMMTA92 FMMTA92 FMMTA92R FMMTA42 -10mA, -30mA FMMTA42 pnp 200v fmmt-a

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF FMMTA92 FMMTA92 FMMTA92R FMMTA42 -10mA, -30mA

    CM12A

    Abstract: br 2222 npn ZX5T651F
    Text: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


    Original     		PDF ZX5T651F ZX5T651FTA CM12A br 2222 npn ZX5T651F

    FMMTA20R

    Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO


    Original     		PDF FMMTA20 FMMTA20R FMMTA70 100mA, 100MHz 140kHz, FMMTA20R FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C

    STT817

    Abstract: st17 SOT-23-6LTSOP-6
    Text: STT817 PNP SILICON POWER TRANSISTOR PRELIMINARY DATA • SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS CHARGE POWER SWITCH FOR MOBILE PHONE ■ DESCRIPTION The device is manufactured using Epitaxial Planar Technology. SOT23-6L TSOP6 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF STT817 OT23-6L OT23-6L STT817 st17 SOT-23-6LTSOP-6

    MMBT5401

    Abstract: No abstract text available
    Text: MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •   Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low Power Amplification and Switching  Case: SOT23  Case material: molded plastic, “Green” molding compound


    Original     		PDF MMBT5401 MMBT5551 J-STD-020 AEC-Q101 MIL-STD-202, DS30057 MMBT5401

    K1M 103

    Abstract: AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103
    Text: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary PNP Types Available BC856 – BC858  Case material: molded plastic, “Green” molding compound


    Original     		PDF BC846A-BC848C BC856 BC858) AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 K1M 103 AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103

    FMMT593

    Abstract: FMMT493
    Text: SOT23 NPN SILICON PIANAR MEDIUM FMMT493 POWER TRANSISTOR ISSUE 3- NOVEMBER COMPLEMENTARY PARTMARKING 1995 TYPE - E 1 1 493 I RATINGS. I SYMBOL ] PARAMETER Collector-Base ! FMMT593 DETAIL - ABSOLUTE MAXIMUM I SOT23 VALUE 1 UNIT Voltage Collector-Emitter Voltage


    Original     		PDF FMMT493 FMMT593 TamW250C 100MHz 10IMA 10tnA 10JmA 100mA 10IIA FMMT593 FMMT493

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 45V  Case: SOT23  IC = 800mA High Continuous Collector Current  Case Material: molded plastic, “Green” molding compound


    Original     		PDF BCW66H 800mA 300mV 100mA BCW68H J-STD-020 AEC-Q101 DS33003

    Untitled

    Abstract: No abstract text available
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		PDF FMMT634 625mW FMMT734 100mA 100us

    BFS17A

    Abstract: MSB003 E2p transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage


    Original     		PDF BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor

    FMMT458

    Abstract: FMMT558
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 100ms FMMT458 FMMT558

    FMMT2484

    Abstract: DSA003691 power ic 5v
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – MARCH 94 FEATURES * 60 Volt VCEO FMMT2484 ✪ E C PARTMARKING DETAIL – 4G B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage


    Original     		PDF FMMT2484 140KHz 200Hz 15kHz FMMT2484 DSA003691 power ic 5v

    k5c transistor

    Abstract: 103 k5c TRANSISTOR K5C
    Text: BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Epitaxial Planar Die Construction  Case Material: Molded Plastic, “Green” Molding Compound  Complementary NPN Types Available BC817


    Original     		PDF BC807-16/-25/-40 BC817) J-STD-020 AEC-Q101 DS11208 k5c transistor 103 k5c TRANSISTOR K5C

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMTA42 ISSUE 5 – SEPTEMBER 2007 ✪ PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage


    Original     		PDF FMMTA42 FMMTA42R FMMTA92 20MHz

    BFS17

    Abstract: NXP BFS17 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage


    Original     		PDF BFS17 MSB003 R77/02/pp8 BFS17 NXP BFS17 MSB003

    BSOT-23

    Abstract: PNP POWER TRANSISTOR SOT23 FMMTA20 FMMTA70 DSA003704
    Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA70 ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAIL – FMMTA70 – 2CZ COMPLIMENTARY TYPE – FMMTA20 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage


    Original     		PDF FMMTA70 FMMTA20 -10mA, 100MHz 100KHz BSOT-23 PNP POWER TRANSISTOR SOT23 FMMTA20 FMMTA70 DSA003704

    BC848A

    Abstract: No abstract text available
    Text: BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary PNP Types: BC856 – BC858   For switching and AF Amplifier Applications Case: SOT23 Case material: molded plastic, “Green” molding compound


    Original     		PDF BC846A-BC848C BC856 BC858 AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 BC848A

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 HIGH PERFORMANCE TRANSISTOR ISSUE 3 - DECEMBER 1995 O COMPLIMENTARY T Y P E - FMMT597 PARTMARKING D ETAIL- 497 I- SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    OCR Scan     		PDF FMMT497 FMMT597 100MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR o FEATURES * 350 Volt VCE0 * Gain of 15 at lc=-i00m A M, APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL - 520 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE


    OCR Scan     		PDF -i00m FMMT6517 -30mA, -50mA, lc--10mA, -20mA, -100mA, -10mA,

    1C SOT23

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT493 O COMPLEMENTARY TYPE - FMMT593 PARTMARKING D E T A IL- 493 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V CBO 120 V Collector-Emitter Voltage


    OCR Scan     		PDF FMMT493 FMMT593 Tarntf--25 100nA 100MHz VCEP10V, 300jis. 100mA 1C SOT23

    NPN transistor 310

    Abstract: TMPT2369
    Text: ALLEGRO MICROSYSTEMS INC 14 D • GSG433Ô OOOMT'iQ t> ■ ALGR -01 SPRAGUE PROELECTRON SOT23? TRANSISTORTYPESiK# *• * SOT23 TRANSISTOR TYPES Type No. BC807-16 BC807-25 BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A BC847B BC847C BC848A BC848B


    OCR Scan     		PDF GSG433Ô BC807-16 BC807-25 BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A NPN transistor 310 TMPT2369