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    TRANSISTOR SOT23 1D Search Results

    TRANSISTOR SOT23 1D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE 1d

    Abstract: SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODES PMBTA42 PMBTA92 marking code DG SMD Transistor transistor marking DG SMD TRANSISTOR MARKING .1D
    Text: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.


    Original     		PDF PMBTA42 O-236AB) PMBTA92. PMBTA42 TRANSISTOR SMD MARKING CODE 1d SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODES PMBTA92 marking code DG SMD Transistor transistor marking DG SMD TRANSISTOR MARKING .1D

    Untitled

    Abstract: No abstract text available
    Text: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.


    Original     		PDF PMBTA42 O-236AB) PMBTA92. PMBTA42

    74299

    Abstract: 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V THN6201S
    Text: THN6201S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6201S is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES


    Original     		PDF THN6201S OT-23 THN6201S 12GHz 800GHz 000GHz 200GHz 400GHz 600GHz 74299 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


    Original     		PDF BFR540 BFR540

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


    Original     		PDF BFR520 BFR520

    bfr520

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


    Original     		PDF BFR520 BFR520

    all transistor data sheet

    Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
    Text: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original     		PDF BFR540 BFR540 all transistor data sheet free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing

    BFR540C

    Abstract: No abstract text available
    Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


    Original     		PDF BFR540 BFR540 BFR540C

    RF TRANSISTOR 1.5 GHZ

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
    Text: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original     		PDF BFR520 BFR520 RF TRANSISTOR 1.5 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520A BFU520A AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU530A BFU530A AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU550A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU550A BFU550A AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise：NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SC2712 2SA1162. OT-23 BL/SSSTC021

    5343 transistor

    Abstract: transistor 2sc5343 2SC5343 equivalent 2sc5343 2SA1980S TRANSISTOR K 135 J 50 transistor 5343
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC5343 Pb Excellent hFE linearity Lead-free :hFE 2 =100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). z Low noise:NF=1Db(Typ).at f=1KHz. z Complementary pair with 2SA1980S.


    Original     		PDF 2SC5343 150Ma 2SA1980S. OT-23 BL/SSSTC022 5343 transistor transistor 2sc5343 2SC5343 equivalent 2sc5343 2SA1980S TRANSISTOR K 135 J 50 transistor 5343

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise:NF=1dB Typ ,10dB(Max). z Commplementary to 2SC2712. z Small package. 2SA1162 Pb Lead-free APPLICATIONS z General purpose application. SOT-23 ORDERING INFORMATION


    Original     		PDF 2SA1162 2SC2712. OT-23 BL/SSSTC0092

    sot-23 Marking LG

    Abstract: 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise：NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SC2712 2SA1162. OT-23 BL/SSSTC021 sot-23 Marking LG 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg

    1D SOT23

    Abstract: sot23 marking 1d transistor SOT23 1d 1d sot-23 marking
    Text: MMBTA42 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High breakdown voltage — Low collector-emitter saturation voltage — Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBTA42 OT-23 OT-23 MMBTA92 30MHz 1D SOT23 sot23 marking 1d transistor SOT23 1d 1d sot-23 marking

    ALY TRANSISTOR

    Abstract: ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR
    Text: KTC3875 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF KTC3875 OT-23 OT-23 KTA1504 100mA, ALY TRANSISTOR ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR

    SY SOT23

    Abstract: SG SOT23 MARKING MARKING sg SOT23
    Text: 2SA1162 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — — — Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SA1162 OT-23 OT-23 2SC2712 -100A -100mA -10mA SY SOT23 SG SOT23 MARKING MARKING sg SOT23

    2sc5343

    Abstract: Transistor 10A 60v
    Text: 2SC5343 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC5343 OT-23 150mA 100mA 2sc5343 Transistor 10A 60v

    A1015 BA

    Abstract: A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015
    Text: A1015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz


    Original     		PDF A1015 OT-23 OT-23 -150mA C1815 -100u -10mA 30MHz A1015 BA A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015

    CBVK741B019

    Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


    Original     		PDF MMBTA42 PZTA42 OT-23 OT-223 CBVK741B019 F63TNR MMBTA42 MPSA42 PN2222N PZTA42

    Untitled

    Abstract: No abstract text available
    Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA


    OCR Scan     		PDF 350mA 380MHz 650MHz 600MHz 200mA 300MHz 100mA

    BSN3005L

    Abstract: A35 diode
    Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 2 g s gate • Direct interface to C-MOS, TTL etc. 3 d drain DESCRIPTION


    OCR Scan     		PDF BSN3005L 711002b 0110D4b 711DfiEbi 011DD4? BSN3005L A35 diode