TRANSISTOR SMD MARKING CODE NV Search Results

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

520301006R

Abstract: 2N5154RESYHRG
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

STMicroelectronics smd marking code

Abstract: smd transistor marking A2 TRANSISTOR SMD MARKING CODE A1 smd transistor marking B3 transistor smd marking 94 TRANSISTOR SMD MARKING CODES marking code 51 SMD Transistor st smd IC marking code NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE d2
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

marking code 51 SMD Transistor

Abstract: STMicroelectronics smd marking code st smd IC marking code smd transistor marking A2 smd transistor marking B3 SMD TRANSISTOR MARKING code TC NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE A1 smd marking code stmicroelectronics ic smd 851
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

MARKING CODE SMD IC sot23-5

Abstract: TRANSISTOR SMD MARKING CODE 703 marking SA sot23-5 transistor marking SA sot23-5 SA MARKING CODE SOT23-5 smd transistor marking sot25 MARKING CODE S.A IC sot23-5 transistor smd marking CS 703 TRANSISTOR smd SMD sot25 marking by
Contextual Info: INTEGRATED CIRCUITS SA57001-XX Microminiature, low power consumption, low dropout regulator Product data Supersedes data of 2001 Aug 01 Philips Semiconductors 2003 Mar 20 Philips Semiconductors Product data Microminiature, low power consumption, low dropout regulator

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

JANSR2N5401UB

Abstract: 2N5401UB06 J2N5401UB1
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

ESCC 5207 005

Abstract: 2N3810HR 2N3810HRG
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor

TRANSISTOR SMD MARKING CODE 1 KW

Contextual Info: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77

MARKING CODE SMD IC 531

Abstract: TRANSISTOR SMD MARKING CODE 1 KW
Contextual Info: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77

transistor AY PNP smd

Abstract: marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG
Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Nov 11 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING • Power dissipation comparable to SOT23

Contextual Info: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics

st smd IC marking code

Abstract: 3STL2540
Contextual Info: 3STL2540 Low voltage high performance PNP power transistor Datasheet — production data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Small, thin, leadless SMD plastic package with excellent thermal behavior

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 LCC-3UB Pin 4 in LCC-3UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

AD8212AL

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 12-02-08 C. SAFFLE Add device type 02 tested at low dose rate. Make changes to paragraphs 1.2.2, 1.5, 4.4.1c, 4.4.4.1, Table I and figure 1. - ro A REV SHEET REV A A A A SHEET 15 16 17 18 REV STATUS REV A

marking code RAD SMD Transistor npn

Abstract: JS55
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

RAD SMD MARKING CODE

Abstract: 2N5551RUB
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description

Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

st 54003

Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection