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    TRANSISTOR SMD 3M Search Results

    TRANSISTOR SMD 3M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD 3M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CMBT2369

    Abstract: np TRANSISTOR smd SOT23
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    ISO/TS16949 OT-23 CMBT2369 C-120 CMBT2369 np TRANSISTOR smd SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Mark ing CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    OT-23 CMBT2369 C-120 PDF

    np TRANSISTOR smd SOT23

    Abstract: smd transistor marking np CMBT2369
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    OT-23 CMBT2369 C-120 np TRANSISTOR smd SOT23 smd transistor marking np CMBT2369 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking


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    OT-23 CMBT2369 C-120 PDF

    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


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    THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501 PDF

    ic 3A hfe 500

    Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.


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    FCX1149A -100mA -10mA -50mA, 50MHz -40mA ic 3A hfe 500 MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Power Transistor 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1


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    2SD2211) PDF

    3F smd transistor

    Abstract: 3D smd marking smd transistor 3F smd transistor 3g smd transistor 3d SMD TRANSISTOR MARKING 3B smd 3f SMD Transistors 3f SMD 3B transistor smd 3E
    Text: Transistors IC SMD Type PNP General Purpose Transistor BC856W,BC857W,BC858W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856W BC857W BC858W Unit Collector-base voltage


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    BC856W BC857W BC858W BC856W BC857W BC856AW BC856BW BC857AW 3F smd transistor 3D smd marking smd transistor 3F smd transistor 3g smd transistor 3d SMD TRANSISTOR MARKING 3B smd 3f SMD Transistors 3f SMD 3B transistor smd 3E PDF

    transistor smd marking CS

    Abstract: 2SA1682
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SA1682 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage. 0.4 3 Features 1 frequency chacateristic Cre : 1.5pF typ . 0.55 Small reverse transfer capacitance and excellent high


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    2SA1682 OT-23 -10mA transistor smd marking CS 2SA1682 PDF

    marking YT

    Abstract: 2SC4852 SMD transistor MARKING 14
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4852 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Small ON resistance. 0.55 Low collector-to-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Small output capacitance. 0.4 3 Features 2


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    2SC4852 OT-23 marking YT 2SC4852 SMD transistor MARKING 14 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage


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    BCV62 BCV62A BCV62C BCV62B BCV61 BCV61A BCV61B BCV61C PDF

    transistor SMD 12E

    Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
    Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3


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    BFS469L6 BFR460L3, BFR949L3) transistor SMD 12E SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36 PDF

    2SC3143

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3143 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small output capacitance. 0.55 High breakdown voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    2SC3143 OT-23 2SC3143 PDF

    SMD 6PIN IC MARKING CODE

    Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
    Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3


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    BFS469L6 BFR460L3, BFR949L3) SMD 6PIN IC MARKING CODE marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2 PDF

    marking code CB SMD tr2

    Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
    Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3


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    BFS466L6 BFR460L3, BFR360L3) marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c PDF

    g3 smd transistor

    Abstract: SMD Transistor g5 transistor SMD g3 smd transistor g3 2SA1257
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SA1257 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small output capacitance. 0.55 High breakdown voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    2SA1257 OT-23 te10V -30mA g3 smd transistor SMD Transistor g5 transistor SMD g3 smd transistor g3 2SA1257 PDF

    smd code marking rf ft sot23

    Abstract: TRANSISTOR SMD MARKING CODE JC smd rf transistor marking SMD TRANSISTOR MARKING 3C rf amplifier sot23 5 marking 14 CD jc SMD code sot23 "Marking code" SUs SOT-23 6 pin TRANSISTOR SMD CODE p transistor smd marking NA sot-23 smd marking code transistor rf
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTOR CMBT5179 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =3C Designed for use in Low Noise UHF/VHF Amplifiers


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    ISO/TS16949 CMBT5179 OT-23 15omers C-120 CMBT5179Rev290503E smd code marking rf ft sot23 TRANSISTOR SMD MARKING CODE JC smd rf transistor marking SMD TRANSISTOR MARKING 3C rf amplifier sot23 5 marking 14 CD jc SMD code sot23 "Marking code" SUs SOT-23 6 pin TRANSISTOR SMD CODE p transistor smd marking NA sot-23 smd marking code transistor rf PDF

    2SJ461

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type SMDType MOS Field Effect Transistor 2SJ461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 high input impedance. 0.55 Not necessary to consider driving current because of its +0.1 1.3-0.1 +0.1 2.4-0.1 Can be driven by a 2.5V power source.


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    2SJ461 OT-23 -10mA --20mA 2SJ461 PDF

    transistor marking T93

    Abstract: PNP 5GHz TRANSISTOR PNP 5GHz PT-200 2SA1978
    Text: Transistors IC SMD Type PNP Eitaxial Silicon Transistor 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT fT=5.5GHz TYP . 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics


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    2SA1978 OT-23 -15mA 200ameter -15mA, transistor marking T93 PNP 5GHz TRANSISTOR PNP 5GHz PT-200 2SA1978 PDF

    BFR460

    Abstract: No abstract text available
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


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    BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 BFR460 PDF

    smd tr1

    Abstract: BFR460L3 BFR949L3 BFS469L6 BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


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    BFS469L6 BFR460L3, BFR949L3) Sep-01-2003 smd tr1 BFR460L3 BFR949L3 BFS469L6 BFR94 PDF

    w342

    Abstract: SDC09
    Text: Surface-mount Power Transistor Array SDC09 External Dimensions SMD-16A 0.89±0.15 0.25 2.54±0.25 +0.15 0.75 –0.05 16 V V mJ 9 a 6.8max ICBO IEBO VCEO hFE VCE sat VFEC Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max


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    SDC09 10max 15max 80min SMD-16A w342 SDC09 PDF

    BFR36

    Abstract: smd transistor marking ZS BFR360L3 BFR460L3 BFS466L6 TR2 SMD TR235
    Text: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


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    BFS466L6 BFR460L3, BFR360L3) Sep-01-2003 BFR36 smd transistor marking ZS BFR360L3 BFR460L3 BFS466L6 TR2 SMD TR235 PDF

    BFR460L3

    Abstract: BFR949L3 BFS469L6 BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


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    BFS469L6 BFR460L3, BFR949L3) BFR460L3 BFR949L3 BFS469L6 BFR94 PDF