TRANSISTOR SMD 3M Search Results

CMBT2369

Abstract: np TRANSISTOR smd SOT23
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Mark ing CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

np TRANSISTOR smd SOT23

Abstract: smd transistor marking np CMBT2369
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking

16-2-472

Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
Contextual Info: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.

ic 3A hfe 500

Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.

Contextual Info: Transistors IC SMD Type NPN Silicon Power Transistor 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1

3F smd transistor

Abstract: 3D smd marking smd transistor 3F smd transistor 3g smd transistor 3d SMD TRANSISTOR MARKING 3B smd 3f SMD Transistors 3f SMD 3B transistor smd 3E
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor BC856W,BC857W,BC858W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856W BC857W BC858W Unit Collector-base voltage

transistor smd marking CS

Abstract: 2SA1682
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SA1682 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage. 0.4 3 Features 1 frequency chacateristic Cre : 1.5pF typ . 0.55 Small reverse transfer capacitance and excellent high

marking YT

Abstract: 2SC4852 SMD transistor MARKING 14
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4852 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Small ON resistance. 0.55 Low collector-to-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Small output capacitance. 0.4 3 Features 2

Contextual Info: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

transistor SMD 12E

Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

2SC3143

Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3143 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small output capacitance. 0.55 High breakdown voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

SMD 6PIN IC MARKING CODE

Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

marking code CB SMD tr2

Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
Contextual Info: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3

g3 smd transistor

Abstract: SMD Transistor g5 transistor SMD g3 smd transistor g3 2SA1257
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SA1257 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small output capacitance. 0.55 High breakdown voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

smd code marking rf ft sot23

Abstract: TRANSISTOR SMD MARKING CODE JC smd rf transistor marking SMD TRANSISTOR MARKING 3C rf amplifier sot23 5 marking 14 CD jc SMD code sot23 "Marking code" SUs SOT-23 6 pin TRANSISTOR SMD CODE p transistor smd marking NA sot-23 smd marking code transistor rf
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTOR CMBT5179 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =3C Designed for use in Low Noise UHF/VHF Amplifiers

2SJ461

Contextual Info: IC MOSFET SMD Type SMDType MOS Field Effect Transistor 2SJ461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 high input impedance. 0.55 Not necessary to consider driving current because of its +0.1 1.3-0.1 +0.1 2.4-0.1 Can be driven by a 2.5V power source.

transistor marking T93

Abstract: PNP 5GHz TRANSISTOR PNP 5GHz PT-200 2SA1978
Contextual Info: Transistors IC SMD Type PNP Eitaxial Silicon Transistor 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT fT=5.5GHz TYP . 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics

BFR460

Contextual Info: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package

smd tr1

Abstract: BFR460L3 BFR949L3 BFS469L6 BFR94
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package

w342

Abstract: SDC09
Contextual Info: Surface-mount Power Transistor Array SDC09 External Dimensions SMD-16A 0.89±0.15 0.25 2.54±0.25 +0.15 0.75 –0.05 16 V V mJ 9 a 6.8max ICBO IEBO VCEO hFE VCE sat VFEC Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max

BFR36

Abstract: smd transistor marking ZS BFR360L3 BFR460L3 BFS466L6 TR2 SMD TR235
Contextual Info: BFS466L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package

BFR460L3

Abstract: BFR949L3 BFS469L6 BFR94
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package