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    TRANSISTOR SH 550 Search Results

    TRANSISTOR SH 550 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SH 550 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ HPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power m anagement application of notebook com puters, and Li-ion battery application.


    OCR Scan     		HPA1758 PA1758G PA1758 PDF

    2SK1746

    Abstract: No abstract text available
    Text: T O SH IB A ^□^7250 GGE334b 57T TO SH IBA FIELD EFFECT TRANSISTOR 2SK1746 SILICON N CHANNEL M OS TYPE tt- M O S II 2 S K 1 746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. U n it in mm TO-220FL DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low D rain-Source ON R esistance


    OCR Scan     		GGE334b 2SK1746 O-220FL to-22Ã 00E3b43 O-220SM TDT725Q 0EBb44 PDF

    2103F

    Abstract: No abstract text available
    Text: T O SH IB A RN2101 F~RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in B ias Resistors •


    OCR Scan     		RN2101 RN2106F RN2101F, RN2102F, RN2103F RN2104F, RN2105F, 1101F 1106F 2103F PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.) Low Noise Figure


    OCR Scan     		2SC2668 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP631,TLP632 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP631, TLP632 PROGRAMMABLE CONTROLLERS U nit in mm AC/DC-INPUT MODULE SOLID STATE RELAY 6 5 4 1 2 3 T1 TT IT3 The TOSHIBA TLP631 and TLP632 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a


    OCR Scan     		TLP631 TLP632 TLP631, TLP632 UL1577, E67349 PDF

    10ID

    Abstract: 2SC2714
    Text: TO SH IBA 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2714 HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 + • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)


    OCR Scan     		2SC2714 100MHz) 10ID 2SC2714 PDF

    2SC4915

    Abstract: No abstract text available
    Text: 2SC4915 TO SH IBA 2SC4915 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)


    OCR Scan     		2SC4915 2SC4915 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC1923 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC1923 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.) Low Noise Figure


    OCR Scan     		2SC1923 100MHz) 00MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 2 173 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK2173) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		2SK2173 2SK2173) 100/j 2SK2173 PDF

    EU100

    Abstract: 2SC2668-Y 2SC2668 QE RB 29
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SC2668 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS 4 .2 M A X . • • Small Reverse Transfer Capacitance : Cre = 0.70 pF (Typ.)


    OCR Scan     		2SC2668 55MAX. EU100 2SC2668-Y 2SC2668 QE RB 29 PDF

    2SC4215

    Abstract: No abstract text available
    Text: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)


    OCR Scan     		2SC4215 SC-70 2SC4215 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4915 TOSHIBA 2SC4915 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM , RF, M IX , IF AM PLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure : NF = 2.3dB (Typ.)


    OCR Scan     		2SC4915 50MHz 150MHz 100MHz PDF

    transistor Sh 550

    Abstract: transistor 2sk 2232
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 DATA SILICON N CHANNEL MOS TYPE L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		2SK2232 36mil 100/j 2SK2232 2SK2232) --25V, transistor Sh 550 transistor 2sk 2232 PDF

    transistor Sh 550

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 SILICON N CHANNEL MOS TYPE DATA L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		2SK2232 36mil 100/j 2SK2232 2SK2232) --25V, 39//II transistor Sh 550 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4215 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4215 HIGH FREQUENCY AM PLIFIER APPLICATIO NS Unit in mm FM, RF, MIX, IF AM PLIFIER APPLICATIO NS 2.1 ± 0.1 1 .2 5 t 0.1 • Sm all Reverse Transfer Capacitance : Cre = 0.55pF Typ.


    OCR Scan     		2SC4215 100MHz) 10MHz PDF

    2SK1746

    Abstract: 2SK174
    Text: TOSHIBA ^□^7250 TO SH IBA FIELD EFFECT TRANSISTOR GGE334b 57T 2SK1746 SILICON N CHANNEL M OS TYPE tt- M O S II 2S K 1746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm TO-220FL DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • • • •


    OCR Scan     		GGE334b 2SK1746 O-220FL 50URCE to-22Ã 00E3b43 O-220SM TDT725Q 2SK1746 2SK174 PDF

    transistor Sh 550

    Abstract: No abstract text available
    Text: TO SH IB A 2SK2173 TOSHIBA FIELD EFFECT TRANSISTOR i <v ; k SILICON N CHANNEL MOS TYPE L2-tt-M O SV • m. 1 1 7 3 w HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS


    OCR Scan     		2SK2173 20ki2) --25Q 371/iH transistor Sh 550 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT80J101 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE G T 8 0 J 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High. Input Impedance High Speed Low Saturation Voltage Enhancement-Mode t f= 0.40//S Max. VCE(sat) = 3-5V (Max->


    OCR Scan     		GT80J101 40//S GT80J PDF

    transistor Sh 550

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RßS (ON) —36mfl (Typ.)


    OCR Scan     		2SK2232 --36mfl 339//H transistor Sh 550 PDF

    NEC Ga FET marking L

    Abstract: No abstract text available
    Text: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    OCR Scan     		NE429M01 NE429M01 200pm NEC Ga FET marking L PDF

    Untitled

    Abstract: No abstract text available
    Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    OCR Scan     		NE429M01 NE429M01 NE429M01-T1 Fin/50 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TQC17ESQ 0 0 2 3 3 4 4 7T7 TO SH IBA FIELD EFFECT TRANSISTOR 2SK1721 SILICON N CHANNEL M OS TYPE ff- M O SII 2 S K 1 721 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL U n it in mm DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low Drain-Source O N Resistance


    OCR Scan     		17ESQ 2SK1721 O-220FL 0023b43 O-220SM PDF

    P4015

    Abstract: MP4015
    Text: MP4015 TO SH IBA T O S H IB A POW ER TRANSISTOR M O D U L E SILICON NPN TRIPLE DIFFUSED TYPE D A R LIN G T O N P OW ER TR ANSISTOR 4 IN 1 M P4 0 1 5 HIGH POWER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE. INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		MP4015 P4015 P4015 MP4015 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT80J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N - CHANNEL M O S TYPE G T 8 0 J 1 01 U n it in m m HIGH P O W ER SWITCHING APPLICATIONS. 2 0.5M AX. • H ig h In p u t Im pedance • H ig h Speed ^3-3 ±0.2 t f = 0 .4 0 / / s M ax.


    OCR Scan     		GT80J101 PDF